Growth and Stability Properties of Rubrene Thin Films

ZHANG Yu-ting; WANG Zhuo; SUN Yang; YAN Chuang; YIN Li; SUN Li-jing; LI Zhan-guo; WANG Li-j

doi:10.3788/fgxb20173808.1047

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Growth and Stability Properties of Rubrene Thin Films

更新时间：2020-08-12

- Growth and Stability Properties of Rubrene Thin Films
- Chinese Journal of Luminescence Vol. 38, Issue 8, Pages: 1047-1055(2017)
- 作者机构：
  
  1. 长春工业大学化学工程学院,吉林长春,130012
  2. 长春理工大学光电工程学院,吉林长春,130022
  3. 吉林省产品质量监督检验院,吉林长春,130000
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (21403016);Scientific Re
- DOI：10.3788/fgxb20173808.1047
  CLC： TN32
- Received：05 January 2017，
  
  Revised：13 February 2017，
  
  Published：05 August 2017
- 稿件说明：
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张玉婷, 王卓, 孙洋等. 红荧烯薄膜生长及稳定性的研究[J]. 发光学报, 2017,38(8): 1047-1055

ZHANG Yu-ting, WANG Zhuo, SUN Yang etc. Growth and Stability Properties of Rubrene Thin Films[J]. Chinese Journal of Luminescence, 2017,38(8): 1047-1055
张玉婷, 王卓, 孙洋等. 红荧烯薄膜生长及稳定性的研究[J]. 发光学报, 2017,38(8): 1047-1055 DOI： 10.3788/fgxb20173808.1047.

ZHANG Yu-ting, WANG Zhuo, SUN Yang etc. Growth and Stability Properties of Rubrene Thin Films[J]. Chinese Journal of Luminescence, 2017,38(8): 1047-1055 DOI： 10.3788/fgxb20173808.1047.

摘要

利用原子力显微镜研究了二氧化硅衬底上红荧烯薄膜的生长及稳定性。在较低沉积速率下，较低衬底温度时，红荧烯分子有充足的扩散时间，利于薄膜的横向生长，形成连续性、均匀性较好的薄膜。快速蒸镀及较高衬底温度使红荧烯薄膜转变为纵向生长模式，形成团粒状岛。横向生长的红荧烯薄膜在退火和空气中表现为亚稳特性，随着退火温度的升高和空气中放置时间的延长，红荧烯分子会自发地进行质量传输，发生纵向转移，转变为团粒状岛。获得了二氧化硅界面上红荧烯薄膜的生长及亚稳定机制模型。研究结果证明红荧烯分子与二氧化硅界面之间的作用力小于红荧烯分子间的作用力。

Abstract

Growth and stability properties of rubrene thin films on silicon dioxide substrate were investigated by atomic force microscopy. At a low deposition rate and a low substrate temperature

the rubrene molecules have sufficient diffusion time for the horizontal growth of thin film

and the thin films with better continuity and uniformity can be obtained. However

at a fast evaporation rate and a high substrate temperature

the rubrene thin films change into vertical growth mode

and the dot islands are obtained. The rubrene thin films of horizontal growth show substability properties at annealing and ambient conditions. With the increase of annealing temperature and time under ambient conditions

the spontaneous mass transmission occurrs for the rubrene molecules. The vertical transfer occurrs and the thin films change into dot islands. The model of growth and substability properties of rubrene thin films on silicon dioxide substrate are obtained. The results imply that the force between rubrene molecules and silicon dioxide substrate is weaker than that among rubrene molecules.

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references

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