Excitation Mechanism of Eu3+ Photoluminescence from Eu Doped Silicon Oxycarbide Film

WANG Yan; LIN Zhen-xu; SONG Jie; ZHANG Wen-xing; WANG Huai-pei; GUO Yan-qing; LI Hong-lian

doi:10.3788/fgxb20173808.1010

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Excitation Mechanism of Eu³⁺ Photoluminescence from Eu Doped Silicon Oxycarbide Film

更新时间：2020-08-12

- Excitation Mechanism of Eu³⁺ Photoluminescence from Eu Doped Silicon Oxycarbide Film
- Chinese Journal of Luminescence Vol. 38, Issue 8, Pages: 1010-1014(2017)
- 作者机构：
  
  1. 太原理工大学物理与光电工程学院,山西太原,030006
  2. 韩山师范学院材料科学与工程学院,广东潮州,521041
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (61274140, 61306003);Nat
- DOI：10.3788/fgxb20173808.1010
  CLC： O469;O482.31
- Received：28 December 2016，
  
  Revised：11 March 2017，
  
  Published：05 August 2017
- 稿件说明：
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王岩, 林圳旭, 宋捷等. Eu掺杂SiCxOy薄膜的Eu3+发光机制[J]. 发光学报, 2017,38(8): 1010-1014

WANG Yan, LIN Zhen-xu, SONG Jie etc. Excitation Mechanism of Eu3+ Photoluminescence from Eu Doped Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(8): 1010-1014
王岩, 林圳旭, 宋捷等. Eu掺杂SiCxOy薄膜的Eu3+发光机制[J]. 发光学报, 2017,38(8): 1010-1014 DOI： 10.3788/fgxb20173808.1010.

WANG Yan, LIN Zhen-xu, SONG Jie etc. Excitation Mechanism of Eu3+ Photoluminescence from Eu Doped Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017,38(8): 1010-1014 DOI： 10.3788/fgxb20173808.1010.

摘要

利用磁控溅射技术在低温250℃下制备Eu掺杂SiC

薄膜，研究薄膜的Eu

发光激发机制。实验结果表明，薄膜的发光谱由来自基体材料的蓝光和来自Eu

的红光组成；随着薄膜中Eu含量由0.19%增加到2.27%，其红光强度增加3倍左右，而蓝光逐渐减弱。Raman光谱及荧光瞬态谱分析表明，其蓝光由中立氧空位缺陷发光中心引起。结合薄膜的Eu

激发光谱分析，SiC

：Eu薄膜的红光增强源于薄膜中Eu

离子浓度的增加和/或基体材料的中立氧空位缺陷发光中心与Eu

离子的能量转移。

Abstract

Eu doped silicon oxycarbide (SiC

:Eu) films were fabricated by magnetron sputtering at a low temperature of 250℃. The excitation mechanism of Eu

photoluminescence (PL) from SiC

:Eu was investigated. The spectra of all the SiC

:Eu films contain two PL bands:the blue band originated from the host matrix and Eu

red PL band. With the increasing of the content of Eu from 0.19% to 2.27%

the red PL intensity is enhanced more than three times

while the blue PL intensity gradually decreases. The analysis results of Rama spectra and time-resolved PL show that the blue PL mainly originates from neutral oxygen vacancy (NOV) defect centers in the SiC

matrix. Combining with the PLE results

the enhanced red light emission is suggested from the increased concentration of Eu

ions and/or the energy transfer between the NOV defect centers and optically active Eu

ions.

关键词

Keywords

references

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Related Institution

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