Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED

LYU Quan-jiang; MO Chun-lan; ZHANG Jian-li; WU Xiao-ming; LIU Jun-lin; JIANG Feng-yi

doi:10.3788/fgxb20173807.0923

您当前的位置：

首页 >

文章列表页 >

Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED

更新时间：2020-08-12

- Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED
- Chinese Journal of Luminescence Vol. 38, Issue 7, Pages: 923-929(2017)
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
  
  Supported by State Key Program of Research and Development of China (2016YFB0400600,
- DOI：10.3788/fgxb20173807.0923
  CLC： O484.4;TN383+.1
- Received：21 December 2016，
  
  Revised：22 January 2017，
  
  Published：05 July 2017
- 稿件说明：
移动端阅览
吕全江, 莫春兰, 张建立等. 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J]. 发光学报, 2017,38(7): 923-929

LYU Quan-jiang, MO Chun-lan, ZHANG Jian-li etc. Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED[J]. Chinese Journal of Luminescence, 2017,38(7): 923-929
吕全江, 莫春兰, 张建立等. 量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响[J]. 发光学报, 2017,38(7): 923-929 DOI： 10.3788/fgxb20173807.0923.

LYU Quan-jiang, MO Chun-lan, ZHANG Jian-li etc. Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED[J]. Chinese Journal of Luminescence, 2017,38(7): 923-929 DOI： 10.3788/fgxb20173807.0923.

摘要

使用MOCVD在图形化Si衬底上生长了含V形坑的InGaN/GaN蓝光LED。通过改变生长温度，生长了禁带宽度稍大的载流子限制阱和禁带宽度稍小的发光阱，研究了两类量子阱组合对含V形坑InGaN/GaN基蓝光LED效率衰减的影响。使用高分辨率X射线衍射仪和LED电致发光测试系统对LED外延结构和LED光电性能进行了表征。结果表明：限制阱靠近n层、发光阱靠近p层的新型量子阱结构，在室温75 A/cm

时的外量子效率相对于其最高点仅衰减12.7%，明显优于其他量子阱结构的16.3%、16.0%、28.4%效率衰减，且只有这种结构在低温时（

150 K）未出现内量子效率随电流增大而剧烈衰减的现象。结果表明，合理的量子阱结构设计能够显著提高电子空穴在含V形坑量子阱中的有效交叠，促进载流子在阱间交互，提高载流子匹配度，抑制电子泄漏，从而减缓效率衰减、提升器件光电性能。

Abstract

V-pits-containing InGaN/GaN blue LEDs were grown on patterned Si substrate by metal-organic chemical vapor deposition (MOCVD). A carrier confinement quantum well(QW)with a larger band gap and a light-emitting QW with a slightly smaller band gap were grown by tuning growth temperature. The effect of QW structure on the efficiency droop performance of V-pits-containing InGaN/GaN blue LED was investigated with some means to mix the two different types of QW. LED epitaxial wafers and LED photoelectric properties were characterized by high-resolution X-ray diffraction and LED test system. For the novel quantum well structure in which the confinement QW close to the n-side and the light-emitting QW close to the p-side

the droop of the external quantum efficiency is only 12.7%

which shows a more significant improvement compared with other QW structures (16.3%

16.0%

28.4%). What's more

only for this kind of structure

the internal quantum efficiency does not decrease sharply with the increasing of drive current at low temperature(

150 K). The results show that a reasonable design of QW structure can significantly improve the effective overlap of electron-hole pairs in V-pits-containing InGaN/GaN QWs

promote carriers interaction between wells

and then improve carriers matching degree

inhibit electron leakage

retard efficiency droop

and finally enhance the photoelectric properties of devices.

关键词

Keywords

references

HORIUCHI N. Light-emitting diodes:natural white light[J]. Nat. Photon., 2010, 4(11):738.

MORKO H. Handbook of Nitride Semiconductors and Devices[M]. Weinheim:Wiley-VCH, 2008.

YANG Y, CAO X A, YAN C H. Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes[J]. IEEE Trans. Electron Dev., 2008, 55(7):1771-1775.

NAKAMURA S, SENOH M, IWASA N, et al.. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures[J]. Jpn. J. Appl. Phys., 1995, 34(7A):L797.

KIM M H, SCHUBERT M F, DAI Q, et al.. Origin of efficiency droop in GaN-based light-emitting diodes[J]. Appl. Phys. Lett., 2007, 91(18):183507-1-3.

SHEN Y C, MUELLER G O, WATANABE S, et al.. Auger recombination in InGaN measured by photoluminescence[J]. Appl. Phys. Lett., 2007, 91(14):141101-1-3.

ROZHANSKY I V, ZAKHEIM D A. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density[J]. Semiconductors, 2006, 40(7):839-845.

BAN D, SARGENT E H. Influence of nonuniform carrier distribution on the polarization dependence of modal gain in multiquantum-well lasers and semiconductor optical amplifiers[J]. IEEE J. Quant. Electron., 2000, 36(9):1081-1088.

XIA C S, LI Z M S, LU W, et al.. Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer[J]. J. Appl. Phys., 2012, 111(9):094503-1-4.

WANG C H, KE C C, LEE C Y, et al.. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer[J]. Appl. Phys. Lett., 2010, 97(26):261103-1-3.

XIA C S, LI Z M S, LU W, et al.. Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier[J]. Appl. Phys. Lett., 2011, 99(23):233501-1-3.

CHEN Y, TAKEUCHI T, AMANO H, et al.. Pit formation in GaInN quantum wells[J]. Appl. Phys. Lett., 1998, 72(6):710-712.

WU X H, ELSASS C R, ABARE A, et al.. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells[J]. Appl. Phys. Lett., 1998, 72(6):692-694.

WATANABE K, YANG J R, HUANG S Y, et al.. Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN[J]. Appl. Phys. Lett., 2003, 82(5):718-720.

HANGLEITER A, HITZEL F, NETZEL C, et al.. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency[J]. Phys. Rev. Lett., 2005, 95(12):127402-1-4.

QUAN Z J, WANG L, ZHENG C D, et al.. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes[J]. J. Appl. Phys., 2014, 116(18):183107-1-5.

WU X M, LIU J L, JIANG F Y. Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes[J]. J. Appl. Phys., 2015, 118(16):164504-1-4.

LI C K, WU C K, HSU C C, et al.. 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits[J]. AIP Adv., 2016, 6(5):055208-1-10.

SUN Q, YAN W, FENG M X, et al.. GaN-on-Si blue/white LEDs:epitaxy, chip, and package[J]. J. Semicond., 2016, 37(4):044006-1-8.

江风益, 刘军林, 王立, 等. 硅衬底高光效GaN基蓝色发光二极管[J]. 中国科学:物理学力学天文学, 2015, 45(6):067302-1-18. JIANG F Y, LIU J L, WANG L, et al.. High optical efficiency GaN based blue LED on silicon substrate[J]. Sci. Sinica Phys., Mech. Astron., 2015, 45(6):067302-1-18. (in Chinese)

LIU J L, FENG F F, ZHOU Y H, et al.. Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate[J]. Appl. Phys. Lett., 2011, 99(11):111112-1-3.

MAO Q H, LIU J L, WU X M, et al.. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. J. Semicond., 2015, 36(9):093003-1-4.

LIU J P, RYOU J H, DUPUIS R D, et al.. Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes[J]. Appl. Phys. Lett., 2008, 93(2):021102-1-3.

赵芳, 张运炎, 宋晶晶, 等. 具有三角形InGaN/GaN多量子阱的高内量子效率的蓝光LED[J]. 发光学报, 2013, 34(1):66-72. ZHAOF, ZHANG Y Y, SONG J J, et al.. High internal quantum efficiency blue light-emitting diodes with triangular shaped InGaN/GaN multiple quantum wells[J]. Chin. J. Lumin., 2013, 34(1):66-72. (in English)

DAI Q, SCHUBERT M F, KIM M H, et al.. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities[J]. Appl. Phys. Lett., 2009, 94(11):111109-1-3.

YAMANE Y, FUJIWARA K, SHEU J K. Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode[J]. Appl. Phys. Lett., 2007, 91(7):073501-1-3.

WATANABE S, YAMADA N, NAGASHIMA M, et al.. Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes[J]. Appl. Phys. Lett., 2003, 83(24):4906-4908.

QI Y D, LIANG H, TANG W, et al.. Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy[J]. J. Cryst. Growth, 2004, 272(1-4):333-340.

Views

400

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode

Effect of p-GaN Spacer Layer on Emission Spectrum of Yellow-green Dual Wavelength LED

Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode

Stress Modulation of GaN Based LED Thin Film Chip on Silicon Substrate

Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates

Related Author

SUN Wen-wen

FANG Fang

WANG Xiao-lan

ZHENG Chang-da

PAN Shuan

WEI Duo-lei

WANG Xiao-lan

ZHENG Chang-da

Related Institution

National Institute of LED on Silicon Substrate, Nanchang University

College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China

National Engineering Technology Research Center for LED on Si Substrate, Nanchang University

College of Physics and Information Engineering, Minnan Normal University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰