Organic Electrical Bistable Devices Based on Poly[2-methoxy-5-(20-ethyl-hexyloxy)-1,4-phenyl vinylene]/poly(ethylene glycol) Films

HAN Hui-zhen; DENG Zhen-bo; HU Yu-feng

doi:10.3788/fgxb20173806.0793

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Organic Electrical Bistable Devices Based on Poly[2-methoxy-5-(20-ethyl-hexyloxy)-1,4-phenyl vinylene]/poly(ethylene glycol) Films

更新时间：2020-08-12

- Organic Electrical Bistable Devices Based on Poly[2-methoxy-5-(20-ethyl-hexyloxy)-1,4-phenyl vinylene]/poly(ethylene glycol) Films
- Chinese Journal of Luminescence Vol. 38, Issue 6, Pages: 793-798(2017)
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61377028)
- DOI：10.3788/fgxb20173806.0793
  CLC： O484.3
- Received：27 December 2016，
  
  Revised：19 February 2017，
  
  Published：05 June 2017
- 稿件说明：
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韩慧珍, 邓振波, 胡煜峰. MEH-PPV/PEG聚合物电双稳器件的研究[J]. 发光学报, 2017,38(6): 793-798

HAN Hui-zhen, DENG Zhen-bo, HU Yu-feng. Organic Electrical Bistable Devices Based on Poly[2-methoxy-5-(20-ethyl-hexyloxy)-1,4-phenyl vinylene]/poly(ethylene glycol) Films[J]. Chinese Journal of Luminescence, 2017,38(6): 793-798
韩慧珍, 邓振波, 胡煜峰. MEH-PPV/PEG聚合物电双稳器件的研究[J]. 发光学报, 2017,38(6): 793-798 DOI： 10.3788/fgxb20173806.0793.

HAN Hui-zhen, DENG Zhen-bo, HU Yu-feng. Organic Electrical Bistable Devices Based on Poly[2-methoxy-5-(20-ethyl-hexyloxy)-1,4-phenyl vinylene]/poly(ethylene glycol) Films[J]. Chinese Journal of Luminescence, 2017,38(6): 793-798 DOI： 10.3788/fgxb20173806.0793.

摘要

将PEG（聚乙二醇）引入到 ITO/MEH-PPV（聚（2-甲氧基，5（2'-乙基己氧基）-1，4-苯撑乙烯撑）/Al三明治器件中，实现了很好的电双稳性能。通过改变PEG的分子量、浓度以及退火温度等条件，对器件性能进行了优化。通过电流-电压（I-

）测试研究了不同器件的性能，结果表明，分子量为4 000的PEG，在30 mg/mL的浓度下，通过120℃退火制备的薄膜，其器件性能最优，电流开关比可以达到10

以上。利用SEM测试研究了活性层的膜形貌，并结合电流-电压（I-

）曲线的线性拟合，分析了电荷在器件中的传输过程。研究发现，相分离产生的陷阱对电荷的俘获是该器件产生电双稳特性的主要原因。

Abstract

Organic electrical bistable devices based on MEH-PPV (poly[2-methoxy-5-(20-ethyl-hexyloxy)-1

4-phenyl vinylene]) and PEG[poly(ethylene glycol)]

bilayer films were demonstrated. The structure of the device is Al/MEH-PPV/PEG/ITO

and we optimize the device by changing the molecular weight

concentration and annealing temperature of PEG film. The electrical current ON/OFF ratio of the optimized device is over 10

between the high-conducting state (ON state) and low-conducting state (OFF state). The device remains in the high resistance state below the threshold voltage of 2.5 V and the device resistance abruptly decreases due to the trap-controlled space charge limit current

leading to a high conductivity state. The SEM measurements and I-

curve fitting indicate that the phase separation induced electrical charge trapping plays an important role for the electrical bistable behavior of the devices.

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references

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