Effect of Interdigitated SiO2 Current Blocking Layer on External Quantum Efficiency of High Power LEDs

LIU Meng-ling; GAO Yi-lin; HU Hong-po; LIU Xing-tong; LYU Jia-jiang; ZHENG Chen-ju; DING X

doi:10.3788/fgxb20173806.0786

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Effect of Interdigitated SiO₂ Current Blocking Layer on External Quantum Efficiency of High Power LEDs

更新时间：2020-08-12

- Effect of Interdigitated SiO₂ Current Blocking Layer on External Quantum Efficiency of High Power LEDs
- Chinese Journal of Luminescence Vol. 38, Issue 6, Pages: 786-792(2017)
- 作者机构：
  
  武汉大学动力与机械学院,湖北武汉,430072
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(51675386, 51305266);&quo
- DOI：10.3788/fgxb20173806.0786
  CLC： TN383
- Received：05 December 2016，
  
  Revised：03 February 2017，
  
  Published：05 June 2017
- 稿件说明：
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刘梦玲, 高艺霖, 胡红坡等. 插指型SiO2电流阻挡层对大功率LED外量子效率的影响[J]. 发光学报, 2017,38(6): 786-792

LIU Meng-ling, GAO Yi-lin, HU Hong-po etc. Effect of Interdigitated SiO2 Current Blocking Layer on External Quantum Efficiency of High Power LEDs[J]. Chinese Journal of Luminescence, 2017,38(6): 786-792
刘梦玲, 高艺霖, 胡红坡等. 插指型SiO2电流阻挡层对大功率LED外量子效率的影响[J]. 发光学报, 2017,38(6): 786-792 DOI： 10.3788/fgxb20173806.0786.

LIU Meng-ling, GAO Yi-lin, HU Hong-po etc. Effect of Interdigitated SiO2 Current Blocking Layer on External Quantum Efficiency of High Power LEDs[J]. Chinese Journal of Luminescence, 2017,38(6): 786-792 DOI： 10.3788/fgxb20173806.0786.

摘要

为了改善蓝光大功率LED芯片p电极处的电流拥挤现象，提高大功率LED芯片的外量子效率，在ITO透明导电层与p-GaN间沉积插指型SiO

电流阻挡层。采用等离子体增强化学气相沉积的方法沉积SiO

薄膜，再经过光刻和BOE湿法刻蚀技术制备插指型SiO

电流阻挡层。采用SimuLED仿真软件分析插指型SiO

电流阻挡层对大功率LED芯片电流扩展性能的影响，研究插指型SiO

电流阻挡层对大功率LED芯片外量子效率的影响。结果发现，插指型SiO

电流阻挡层结构可以有效改善p电极附近的电流拥挤现象。与没有沉积插指型SiO

电流阻挡层的大功率LED芯片相比，光输出功率得到显著的提高。在350 mA的输入电流下，沉积插指型SiO

电流阻挡层后的大功率LED芯片的外量子效率提高了18.7%。

Abstract

In order to alleviate current crowding around p-electrode of high power blue light-emitting diodes (LEDs) and improve its external quantum efficiency (EQE)

a SiO

current blocking layer (CBL) was deposited between ITO transparent conductive layer and p-GaN by plasma enhanced chemical vapor deposition (PECVD). An interdigitated SiO

CBL pattern was then fabricated by photolithography and BOE wet etching process. The effect of interdigitated SiO

CBL on the current spreading performance of high power LED was analyzed using commercial SimuLED package. It is found that the current crowding around the p-electrode is effectively alleviated by employing the interdigitated SiO

CBL. Comparing with the high power LED without interdigitated SiO

CBL

the light output power is significantly improved. At 350 mA injection current

the external quantum efficiency of the high power LED with interdigitated SiO

CBL is 18.7% higher than that of LED without interdigitated SiO

CBL.

关键词

Keywords

references

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