LIU Ming-zhe, LI Peng-chong, DENG Gao-qiang etc. Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate[J]. Chinese Journal of Luminescence, 2017,38(6): 753-759
LIU Ming-zhe, LI Peng-chong, DENG Gao-qiang etc. Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate[J]. Chinese Journal of Luminescence, 2017,38(6): 753-759 DOI: 10.3788/fgxb20173806.0753.
Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate
N DBR,并采用低温AlN缓冲层有效抑制了DBR结构中裂纹的产生,得到了表面均方根粗糙度仅为0.4 nm且导电性能良好的n型DBR,其在369 nm处峰值反射率为68%,阻带宽度为10 nm。在获得导电DBR的基础上,进一步在n型6H-SiC衬底上构建了有、无DBR的垂直结构紫外LED。对比两者电致发光光谱,发现DBR结构的引入有效增强了LED紫外发光强度。
Abstract
Silicon-doped Al
0.19
Ga
0.81
N/Al
0.37
Ga
0.63
N DBRs were grown on n-type 6H-SiC substrates by metal organic chemical vapor deposition(MOCVD). To suppress the generation of cracks
a low-temperature AlN pre-deposition layer on 6H-SiC(0001) substrate was used as buffer. A smooth-surface 15-pair electrically conducting DBR with a reflectance of 68% at 369 nm was obtained. The stop-band bandwidth and RMS value of DBR are 10 nm and 0.4 nm
respectively. Furthermore
the vertical structure UV LEDs with and without n-DBR on 6H-SiC substrate were fabricated. By comparing EL spectra
it is shown that the introduction of DBR structure can effectively improve the UV emission.
关键词
Keywords
references
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