Effect of Annealing on Ga2O3 Film

MA Zheng-zheng; DONG Xin; ZHUANG Shi-wei; XU Heng; HU Da-qiang

doi:10.3788/fgxb20173805.0606

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Effect of Annealing on Ga₂O₃ Film

更新时间：2020-08-12

- Effect of Annealing on Ga₂O₃ Film
- Chinese Journal of Luminescence Vol. 38, Issue 5, Pages: 606-610(2017)
- 作者机构：
  
  吉林大学电子科学与工程学院, 吉林长春 130012
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61106003,61274023);Science and Techaology Project of Jilin Province(20170204045GX)
- DOI：10.3788/fgxb20173805.0606
  CLC： TN383
- Received：21 December 2016，
  
  Revised：19 January 2017，
  
  Published：05 May 2017
- 稿件说明：
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马征征, 董鑫, 庄仕伟等. 退火对Ga2O3薄膜特性的影响[J]. 发光学报, 2017,38(5): 606-610

MA Zheng-zheng, DONG Xin, ZHUANG Shi-wei etc. Effect of Annealing on Ga2O3 Film[J]. Chinese Journal of Luminescence, 2017,38(5): 606-610
马征征, 董鑫, 庄仕伟等. 退火对Ga2O3薄膜特性的影响[J]. 发光学报, 2017,38(5): 606-610 DOI： 10.3788/fgxb20173805.0606.

MA Zheng-zheng, DONG Xin, ZHUANG Shi-wei etc. Effect of Annealing on Ga2O3 Film[J]. Chinese Journal of Luminescence, 2017,38(5): 606-610 DOI： 10.3788/fgxb20173805.0606.

摘要

采用金属有机物化学气相沉积法在

面蓝宝石衬底上生长了高质量的-Ga

薄膜，并将样品分别在真空、氧气、氮气氛围下退火30 min，研究了各类退火工艺对Ga

薄膜特性的影响，对退火所得的薄膜进行了X射线衍射、光致发光谱、紫外透射谱和原子力显微镜扫描的研究。结果表明，各类退火工艺均能够优化薄膜的晶体质量和表面形貌，同时有效改善了薄膜的光学性质。其中，氧气退火后的样品在可见光波段透射率高达83%，且吸收边更加陡峭；表面粗糙度降至0.564 nm，其表面更为平整。这些结果说明氧气退火对晶体质量的提高最为显著。氮气、真空退火的样品在光致发光谱中出现365 nm的发光峰，这是大量氧空位的存在导致的。

Abstract

High-quality Ga

films were grown on the

-plane sapphire substrates by metal organic chemical vapor deposition and annealed in the different atmospheres consisting of vacuum

oxygen

nitrogen for 30 min

respectively. The effects of annealing on crystal structure and optical properties of -Ga

film were researched. The results show that all anneal methods can optimize the crystal structure and optical properties of -Ga

films. Especially

the transmittance and surface roughness of the film annealed in the oxygen reaches 83% and 0.564 nm separately compared with other annealed films

and its absorbtion edge gets sharper. It reveals that the oxygen anneal has more important effect on the improvement of the crystal quality. The films annealed in nitrogen and vacuum both exhibit an clear emission peak at 365 nm in the PL spectra.

关键词

Keywords

references

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