Structure and Resistive Switching Behaviors of Zn1-xCuxO Films Derived by Electrophoretic Deposition

LI Jia-chuan; HE Xin-hua; FAN Jiao-jiao

doi:10.3788/fgxb20173805.0594

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Structure and Resistive Switching Behaviors of Zn_1-xCu_xO Films Derived by Electrophoretic Deposition

更新时间：2020-08-12

- Structure and Resistive Switching Behaviors of Zn_1-xCu_xO Films Derived by Electrophoretic Deposition
- Chinese Journal of Luminescence Vol. 38, Issue 5, Pages: 594-600(2017)
- 作者机构：
  
  华南理工大学材料科学与工程学院,广东广州,510640
- 作者简介：
- 基金信息：
  
  Supported by Science and Technology Project of Guangdong Province(2007A010500012,2013A011401010)
- DOI：10.3788/fgxb20173805.0594
  CLC： O484.4
- Received：11 October 2016，
  
  Revised：12 March 2017，
  
  Published：05 May 2017
- 稿件说明：
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李嘉川, 何新华, 樊娇娇. 电泳沉积法制备的Zn1-xCxO薄膜的结构及阻变性能[J]. 发光学报, 2017,38(5): 594-600

LI Jia-chuan, HE Xin-hua, FAN Jiao-jiao. Structure and Resistive Switching Behaviors of Zn1-xCuxO Films Derived by Electrophoretic Deposition[J]. Chinese Journal of Luminescence, 2017,38(5): 594-600
李嘉川, 何新华, 樊娇娇. 电泳沉积法制备的Zn1-xCxO薄膜的结构及阻变性能[J]. 发光学报, 2017,38(5): 594-600 DOI： 10.3788/fgxb20173805.0594.

LI Jia-chuan, HE Xin-hua, FAN Jiao-jiao. Structure and Resistive Switching Behaviors of Zn1-xCuxO Films Derived by Electrophoretic Deposition[J]. Chinese Journal of Luminescence, 2017,38(5): 594-600 DOI： 10.3788/fgxb20173805.0594.

摘要

采用电泳沉积法在FTO导电玻璃基片上制备Zn

O薄膜，并对其微观结构、光致发光谱、伏安特性、保持特性和转换电压分布进行探讨。PL谱表明，Cu掺杂在禁带中引入深受主能级，降低氧空位浓度，导致ZnO薄膜的紫外发光、蓝光发光和绿光发光峰强度降低。所得薄膜的晶粒细小、致密、均匀，具有稳定的双极性阻变特性，开关比

off

最高达到10

，其低阻态（LRS）和高阻态（HRS）的阻变机理分别符合欧姆定律和空间电荷限制传导理论。器件经100次循环测试后开关比无明显变化，呈现出较为良好的抗疲劳特性。Cu掺杂对LRS影响不大，但显著改善了HRS的分散性以及转换电压

SET

的分散性。当Cu掺杂量

=0.04时，器件表现出良好的综合性能：

off

，

off

，

SET

介于0.4~3.03 V之间。

Abstract

O films were fabricated on FTO substrates by electrophoretic deposition. The microstructure

PL spectra

I-V

characteristics

retention measurement and switching voltage distribution were investigated. PL spectra indicate that Cu doping introduces deep acceptor level in the bandgap and decreases the concentration of oxygen vacancy

which result in the decreasing intensity of ultraviolet

blue and green luminescence. The deposited films are dense and uniform

and exhibit bipolar resistive switching behaviors with a high OFF/ON ratio of 10

. The resistive switching behaviors are governed by Ohm's law in the LRS and space charge limited conduction (SCLC) in the HRS

respectively. Good endurance characteristics can be retained after 100 switching cycles without any obvious fluctuation in

off

ratio. Cu

doping has little influence on low resistance state (LRS)

but decreases the dispersion in high resistance state (HRS) and switching voltage

SET

. When Cu doping content

=0.04

the devices show good properties:

off

and the value of

SET

is 0.4-3.03 V.

关键词

Keywords

references

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