GAO Hao-feng, FANG Sheng-huan, ZHANG Ye-feng etc. Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer[J]. Chinese Journal of Luminescence, 2017,38(4): 514-520
GAO Hao-feng, FANG Sheng-huan, ZHANG Ye-feng etc. Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer[J]. Chinese Journal of Luminescence, 2017,38(4): 514-520 DOI: 10.3788/fgxb20173804.0514.
Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer
In order to adjust the exciton recombination zone of exciplex-based organic light-emitting diodes
four devices were fabricated by employing Ir(pq)
2
(acac) as a prober and utilizing the donor of exciplex as a spacer. The device structures are ITO/MoO
3
(2.5 nm)/TPD((40-
x
) nm)/Ir(pq)
2
(acac)(0.5 nm)/TPD(
x
x
=0
3
6
10 nm)/BPhen(40 nm)/Cs
2
CO
3
/Al
where
x
is the thickness of the spacer layer and the TPD/BPhen interface produces the exciplex emission. The electroluminescent spectra of the four devices include two main peaks:478 nm and 595 nm
which originate from the TPD/BPhen interface and Ir(pq)
2
(acac) layer
respectively. As both the thickness of TPD spacer and the applied voltage increase
the recombination zone shifts towards TPD/BPhen interface. That is
more electrons and holes recombine at the interface between TPD and BPhen
leading to the decreased intensity of Ir(pq)
2
(acac) emission. For instance
under an applied voltage of 6 V
the intensity ratio of emission from Ir(pq)
2
(acac) and exciplex (I
Ir complex
:I
exciplex
) is 44.0 and 1.5 for the devices with 0 and 10 nm spacer
respectively. The value of I
Ir complex
:I
exciplex
decreases from 2.8 at 6 V to 1.0 at 10 V for the device with 6-nm-thick TPD spacer. Therefore
the recombination region can be effectively tuned by utilizing the donor of exciplex as a spacer.
关键词
Keywords
references
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