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Influence of Nickel Oxide Anode Buffer Nanolayer on Blue Organic Light-emitting Diodes
- Chinese Journal of Luminescence Vol. 38, Issue 4, Pages: 492-498(2017)
- 作者机构：
1. 兰州大学物理科学与技术学院 微电子研究所,甘肃 兰州,730000
2. 甘肃省科学院 传感技术研究所,甘肃 兰州,730000
3. 兰州大学 特殊功能材料与结构设计教育部重点实验室,甘肃 兰州,730000
4. 兰州大学 磁学与磁性材料教育部重点实验室,甘肃 兰州,730000
- 作者简介：
- 基金信息：Supported by Natural Science Foundation of Gansu Province(1606RJZA026);Science and Technology Planning of Chengguan District of Lanzhou(2016cgkj280)
DOI：10.3788/fgxb20173804.0492
CLC： TN383+.1Received：01 November 2016，
Revised：30 November 2016，
Published：05 April 2017
- 稿件说明：
移动端阅览
孙永哲, 郑礴, 李海蓉等. 纳米结构氧化镍缓冲层对蓝色有机发光二极管性能的影响[J]. 发光学报, 2017,38(4): 492-498
SUN Yong-zhe, ZHENG Bo, LI Hai-rong etc. Influence of Nickel Oxide Anode Buffer Nanolayer on Blue Organic Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2017,38(4): 492-498
孙永哲, 郑礴, 李海蓉等. 纳米结构氧化镍缓冲层对蓝色有机发光二极管性能的影响[J]. 发光学报, 2017,38(4): 492-498 DOI： 10.3788/fgxb20173804.0492.
SUN Yong-zhe, ZHENG Bo, LI Hai-rong etc. Influence of Nickel Oxide Anode Buffer Nanolayer on Blue Organic Light-emitting Diodes[J]. Chinese Journal of Luminescence, 2017,38(4): 492-498 DOI： 10.3788/fgxb20173804.0492.
摘要
在阳极和空穴传输层分别引入氧化镍纳米结构缓冲层'制备了蓝色有机发光二极管'对二极管的电学和光学特性进行了测试分析'研究了采用电化学方法制备的氧化镍纳米结构对器件的影响。结果表明'纳米结构氧化镍缓冲层能够有效地提高空穴-电子对的产生和复合效率'它的引入带来了高效的空穴注入及发光层中的载流子平衡'能有效提高有机发光二极管的电致发光特性。氧化镍缓冲层沉积时间为30 s的器件具有最高的亮度和电流效率'分别为42 460 cd/m
2
和24 cd/A'该器件的CIE
x'y
色坐标为（0.212 9'0.325 2）。
Abstract
The electrical and optical properties of blue organic light-emitting diodes fabricated by utilizing nickel-oxide nano buffer layers between the anodes and hole transport layers were investigated. NiO nanolayer on ITO was prepared by the electrochemical methods. The effects of NiO nanolayer on the device performances were studied. The experimental results show that NiO buffer layer can effectively enhance the probability of hole-electron recombination due to an efficient holes injection into and charge balance in an emitting layer. The sample with Ni deposition time of 30 s has the highest luminance of 42 460 cd/m
2
maximum current efficiency of 24 cd/A
and CIE
x
y
coordinates of (0.212 9
0.325 2)
respectively.
关键词
Keywords
references
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