Progress on Structure Optimization of GaN Based Schottky Diode

WU Yue-fang; GUO Wei-ling; CHEN Yan-fang; LEI Liang

doi:10.3788/fgxb20173804.0477

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Progress on Structure Optimization of GaN Based Schottky Diode

更新时间：2020-08-12

- Progress on Structure Optimization of GaN Based Schottky Diode
- Chinese Journal of Luminescence Vol. 38, Issue 4, Pages: 477-486(2017)
- 作者机构：
  
  北京工业大学光电子技术省部共建教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173804.0477
  CLC： TN311.7
- Received：28 October 2016，
  
  Revised：24 December 2016，
  
  Published：05 April 2017
- 稿件说明：
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吴月芳, 郭伟玲, 陈艳芳等. GaN基肖特基势垒二极管结构优化研究进展[J]. 发光学报, 2017,38(4): 477-486

WU Yue-fang, GUO Wei-ling, CHEN Yan-fang etc. Progress on Structure Optimization of GaN Based Schottky Diode[J]. Chinese Journal of Luminescence, 2017,38(4): 477-486
吴月芳, 郭伟玲, 陈艳芳等. GaN基肖特基势垒二极管结构优化研究进展[J]. 发光学报, 2017,38(4): 477-486 DOI： 10.3788/fgxb20173804.0477.

WU Yue-fang, GUO Wei-ling, CHEN Yan-fang etc. Progress on Structure Optimization of GaN Based Schottky Diode[J]. Chinese Journal of Luminescence, 2017,38(4): 477-486 DOI： 10.3788/fgxb20173804.0477.

摘要

作为宽禁带半导体器件'GaN基肖特基势垒二极管（SBD）有耐高压、耐高温、导通电阻小等优良特性'这使得它在电力电子等领域有广泛应用。本文首先综述了SBD发展要解决的问题；然后'介绍了GaN SBD结构、工作原理及结构优化研究进展；接下来'总结了AlGaN/GaN SBD结构、工作原理及结构优化研究进展'并着重从AlGaN/GaN SBD的外延片结构、肖特基电极结构以及边缘终端结构等角度'阐述了这些结构的优化对AlGaN/GaN SBD性能的影响；最后'对器件进一步的发展方向进行了展望。

Abstract

As a wide band gap semiconductor device

GaN based Schottky barrier diode (SBD) has the characteristics of high voltage

high thermostability

low conduction resistance and other excellent characteristics

which makes it widely used in the field of power electronics. This paper first summarizes the problems to be solved in the development of SBD. Then

the structure

working principle and structure optimization of GaN SBD are introduced. Next

the structure

working principle and structure optimization of AlGaN/GaN SBD are summarized

and the effects of these structures on the performance of AlGaN/GaN SBDs are discussed from the perspective of epitaxial wafer structure

Schottky electrode structure and edge termination structure of AlGaN/GaN SBD.

关键词

Keywords

references

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