Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons

doi:10.3788/fgxb20173804.0463

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Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons

更新时间：2020-08-12

- Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons
- Chinese Journal of Luminescence Vol. 38, Issue 4, Pages: 463-469(2017)
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 新疆乌鲁木齐 830011
  3. 中国电子科技集团公司第十八研究所, 天津 300381
- 作者简介：
- 基金信息：
  
  Supported by Xinjiang Special Project of Thousand Talents Program of The Central Organization Department;National Natural Science Foundation of China(11275262,61534008)
- DOI：10.3788/fgxb20173804.0463
  CLC： O475;TN304.2+3
- Received：10 October 2016，
  
  Revised：01 December 2016，
  
  Published：05 April 2017
- 稿件说明：
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李占行, 艾尔肯·阿不都瓦衣提等. 1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究[J]. 发光学报, 2017,38(4): 463-469

LI Zhan-hang, Aierken ABUDUWAYITI, Maliya HEINI etc. Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons[J]. Chinese Journal of Luminescence, 2017,38(4): 463-469
李占行, 艾尔肯·阿不都瓦衣提等. 1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究[J]. 发光学报, 2017,38(4): 463-469 DOI： 10.3788/fgxb20173804.0463.

LI Zhan-hang, Aierken ABUDUWAYITI, Maliya HEINI etc. Radiation Effects of Lattice Matched and Upright Metamorphic GaInP/GaInAs/Ge Triple-junction Solar Cells by 1 MeV Electrons[J]. Chinese Journal of Luminescence, 2017,38(4): 463-469 DOI： 10.3788/fgxb20173804.0463.

摘要

对采用MOCVD方法制备的晶格匹配（LM）与晶格失配（UMM）GaInP/GaInAs/Ge三结太阳电池进行了1 MeV电子辐射效应研究。结果表明：在电子辐照下'两种电池的

I-V

特性参数（开路电压

'短路电流I

'最大输出功率

max

）均发生衰降'且晶格失配电池的

I-V

特性参数衰降均大于晶格匹配电池。在光谱响应方面'对于顶电池'晶格匹配电池的衰降大于晶格失配电池；而中间电池则前者衰降小于后者；另外'Ge底电池的光谱响应表现特殊'辐照后光谱响应变强。

Abstract

In order to obtain the space solar cells which meanwhile satisfy the requirements of radiation resistance and high efficiency

the research on the radiation effects of solar cells in space is of great significance. 1 MeV electron irradiation effects on the lattice matched and upright metamorphic GaInP/GaInAs/Ge triple-junction solar cells were investigated for the fluence range from 510

/cm

-1.510

/cm

and the irradiation flux of 1.010

/(cm

s) was investigated. The damage effects in the solar cells were studied by measuring their electrical properties and spectral response together. It is observed that the electrical parameters (

max

) of both solar cells degrade seriously

and the degradation of upright metamorphic solar cell is higher than lattice matched cell. As to the spectral response results

the GaInP top cell of lattice matched solar cell degrades more than upright metamorphic solar cell

but the GaInAs middle cell of lattice matched solar cell degrades less than upright metamorphic solar cell. Besides

the spectral response result of Ge bottom cell shows very special in both solar cells:it becomes stronger after radiation. This is mainly in that the irradiation can produce displacement damage in the crystal lattice

and the irradiation defects as recombination center can decrease the carrier lifetime

diffusion length

etc

and then affect the electrical properties of the solar cells.

关键词

Keywords

references

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