Influence of PEG Doping on The Perovskite Solar Cells

QI Jing-qiang; DENG Zhen-bo; LIU Meng-lin; WANG Yue; ZHU Li-jie

doi:10.3788/fgxb20173804.0457

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Influence of PEG Doping on The Perovskite Solar Cells

更新时间：2020-08-12

- Influence of PEG Doping on The Perovskite Solar Cells
- Chinese Journal of Luminescence Vol. 38, Issue 4, Pages: 457-462(2017)
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室, 北京 100044
- 作者简介：
- 基金信息：
  
  Supported by Special Fund for Scientific Research of Central University(2014JBZ009);National Natural Science Fundation of China(61274063,61377028,61475014,61475017)
- DOI：10.3788/fgxb20173804.0457
  CLC： O484.3
- Received：21 October 2016，
  
  Revised：07 December 2016，
  
  Published：05 April 2017
- 稿件说明：
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齐敬强, 邓振波, 刘梦林等. PEG掺杂对钙钛矿太阳能电池的影响[J]. 发光学报, 2017,38(4): 457-462

QI Jing-qiang, DENG Zhen-bo, LIU Meng-lin etc. Influence of PEG Doping on The Perovskite Solar Cells[J]. Chinese Journal of Luminescence, 2017,38(4): 457-462
齐敬强, 邓振波, 刘梦林等. PEG掺杂对钙钛矿太阳能电池的影响[J]. 发光学报, 2017,38(4): 457-462 DOI： 10.3788/fgxb20173804.0457.

QI Jing-qiang, DENG Zhen-bo, LIU Meng-lin etc. Influence of PEG Doping on The Perovskite Solar Cells[J]. Chinese Journal of Luminescence, 2017,38(4): 457-462 DOI： 10.3788/fgxb20173804.0457.

摘要

为了提高钙钛矿太阳能电池的能量转化效率'减小回滞现象'研究了聚乙二醇（PEG）掺杂钙钛矿太阳能电池阳极修饰层PEDOT：PSS对器件性能的影响。通过电容-电压（

C-V

）测试分析了PEDOT：PSS修饰层和钙钛矿层之间的界面电荷积累情况'通过电流密度-时间（

J-T

）瞬态光电流的测量研究了修饰层和钙钛矿层之间缺陷态情况。结果表明'PEG掺杂阳极修饰层提高了器件的短路电流（

）、开路电压（

）和填充因子（FF）'光电转化效率从7.5%提高到10.0%'光电转化效率提高了33%'经过掺杂后的器件回滞现象明显减弱。这种通过PEG掺杂PEDOT：PSS的方法能够减少器件界面处的电荷积累和缺陷态'从而减小器件的回滞现象'提高器件的能量转化效率。

Abstract

Polyethylene glycol (PEG) was doped into the PEDOT:PSS layer of CH

PbI

perovskite solar cells to improve the power conversion efficiency (PCE) and reduce the hysteresis of the device. The capacitance-voltage (

C-V

) and the current density-time (

J-T

) transient measurements were used to study the charge accumulation and defects between the buffer layer and the active layer. The results show that the short circuit current (

)

the open circuit voltage (

)

the fill factor (FF)

and the power conversion efficiency (PCE) of the device with PEG are improved. The PCE of the device with PEG reaches 10.0% which is 33% higher than that of the control device and the hysteresis of

J-V

curve is also reduced with the introduction of PEG. PEG can improve the device properties by reducing the charge accumulation and decreasing the defects which is beneficial to electron collection and reducing hysteresis.

关键词

Keywords

references

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