Influence of Carrier Distribution on The Frequency Behavior for GaN-based LEDs

WU Chun-hui; ZHU Shi-chao; FU Bing-lei; LIU Lei; ZHAO Li-xia; WANG Jun-xi; CHEN Hong-da

doi:10.3788/fgxb20173803.0347

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Influence of Carrier Distribution on The Frequency Behavior for GaN-based LEDs

更新时间：2020-08-12

- Influence of Carrier Distribution on The Frequency Behavior for GaN-based LEDs
- Chinese Journal of Luminescence Vol. 38, Issue 3, Pages: 347-352(2017)
- 作者机构：
  
  1. 中国科学院半导体研究所半导体照明研发中心北京,100083
  2. 中国科学院半导体研究所集成光电子学国家重点实验室北京,100083
  3. 中电科电子装备集团有限公司北京,100070
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(11574306);China Internat
- DOI：10.3788/fgxb20173803.0347
  CLC： TN383+.1
- Received：03 September 2016，
  
  Revised：29 September 2016，
  
  Published：05 March 2017
- 稿件说明：
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吴春晖, 朱石超, 付丙磊等. 载流子分布对GaN基LED频率特性的影响[J]. 发光学报, 2017,38(3): 347-352

WU Chun-hui, ZHU Shi-chao, FU Bing-lei etc. Influence of Carrier Distribution on The Frequency Behavior for GaN-based LEDs[J]. Chinese Journal of Luminescence, 2017,38(3): 347-352
吴春晖, 朱石超, 付丙磊等. 载流子分布对GaN基LED频率特性的影响[J]. 发光学报, 2017,38(3): 347-352 DOI： 10.3788/fgxb20173803.0347.

WU Chun-hui, ZHU Shi-chao, FU Bing-lei etc. Influence of Carrier Distribution on The Frequency Behavior for GaN-based LEDs[J]. Chinese Journal of Luminescence, 2017,38(3): 347-352 DOI： 10.3788/fgxb20173803.0347.

摘要

分别在直流偏置和交流偏置下，对大功率GaN基LED的电学和光学特性进行了研究。结果显示，通过改变靠近p型层的量子垒（也就是最后一个量子垒）中的In组分可以调控有源区中的载流子分布。有源区内积累的电子会引起负电容效应。而通过降低有源区量子垒的势垒高度，可以改善LED中载流子传输特性，并实现载流子复合速率及通信调制带宽20%的提高。这个工作将有助于理解GaN基LED中载流子分布对频率特性的影响，并为设计适用于可见光通信的大功率高速LED奠定基础。

Abstract

The electrical and optical properties of GaN-based high power LEDs were investigated under both DC and AC bias. The results show that the carrier distribution of the active region can be modified by changing the indium concentration of the last quantum barrier. The accumulated electrons in the active region can lead to the negative capacitance effect. The improved carrier transport property for LEDs with lower quantum barrier also helps to increase the recombination rate and modulation bandwidth by 20%. This work will help to understand the influence of carrier distribution on the frequency behavior of GaN-based LEDs.

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references

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Related Institution

State Key Laboratory of Integrated Optoelectronics， Jilin University Region， College of Electronic Science and Engineering， Jilin University

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School of Electronic and Information Engineering, Guangdong Ocean University

中国科学院大学材料科学与光电技术学院

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