Design of Surface Textures for High Light Extraction Efficiency GaN-based Flip-chip TFLEDs

QI Zhao-yi; HU Xiao-long; WANG Hong

doi:10.3788/fgxb20173803.0338

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Design of Surface Textures for High Light Extraction Efficiency GaN-based Flip-chip TFLEDs

更新时间：2020-08-12

- Design of Surface Textures for High Light Extraction Efficiency GaN-based Flip-chip TFLEDs
- Chinese Journal of Luminescence Vol. 38, Issue 3, Pages: 338-346(2017)
- 作者机构：
  
  1. 华南理工大学广东省光电工程技术研究开发中心,广东广州,510640
  2. 华南理工大学电子与信息学院, 广东广州 510640
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173803.0338
  CLC： TN383+.1
- Received：30 August 2016，
  
  Revised：17 October 2016，
  
  Published：05 March 2017
- 稿件说明：
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齐赵毅, 胡晓龙, 王洪. GaN基薄膜LED倒装芯片表面结构设计及光萃取效率研究[J]. 发光学报, 2017,38(3): 338-346

QI Zhao-yi, HU Xiao-long, WANG Hong. Design of Surface Textures for High Light Extraction Efficiency GaN-based Flip-chip TFLEDs[J]. Chinese Journal of Luminescence, 2017,38(3): 338-346
齐赵毅, 胡晓龙, 王洪. GaN基薄膜LED倒装芯片表面结构设计及光萃取效率研究[J]. 发光学报, 2017,38(3): 338-346 DOI： 10.3788/fgxb20173803.0338.

QI Zhao-yi, HU Xiao-long, WANG Hong. Design of Surface Textures for High Light Extraction Efficiency GaN-based Flip-chip TFLEDs[J]. Chinese Journal of Luminescence, 2017,38(3): 338-346 DOI： 10.3788/fgxb20173803.0338.

摘要

利用FDTD方法研究具有表面微纳结构氮化镓基倒装薄膜LED芯片的光萃取效率。通过优化表面结构并研究了器件的光萃取效率随p-GaN层厚的变化。研究发现，具有表面光子晶体和六棱锥结构的器件的光萃取效率最大值比无表面微结构器件分别提高了56%和97%。尽管两种表面结构都能有效提高器件的光萃取效率，然而采用光子晶体的方案对p-GaN厚度和腔长要求极为苛刻。采用六棱锥结构则不仅可以获得更高的光萃取效率，并且还将大大降低实验上材料外延生长及器件制备的难度。

Abstract

Light extraction efficiency (LEE) of flip-chip thin-film LEDs (FC-TFLEDs) with different surface textures were performed by using finite difference time domain method. The surface textures and different thicknesses of p-GaN layer were optimized for high LEE FC-TFLEDs. It is found that the maximum LEE of FC-TFLEDs with photonic crystals and hexagonal cones is 1.56 and 1.97 times to that of FC-TFLEDs with flat surface

respectively. Both types of the surface textures can improve the LEE of FC-TFLEDs

however

it is much difficult to obtain high LEE FC-TFLEDs by employing photonic crystals. The simulated results show that the LEE of FC-TFLEDs is effectively improved by the use of the hexagonal cones

in addition

it can greatly reduce the difficulty in LED material growth and device fabrication.

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references

KIM S K, EE H S, CHOI W K, et al.. Surface-plasmon-induced light absorption on a rough silver surface[J]. Appl. Phys. Lett., 2011, 98(1):011109-1-3.

LIU W J, HU X L, ZHANG J Y, et al.. Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes[J]. Opt. Mater., 2012, 34(8):1327-1329.

GAO W, KIRSTE R, BRYAN I, et al.. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals:a way towards substrate removal in deep ultraviolet-light emitting diode[J]. Appl. Phys. Lett., 2015, 106(8):082110-1-3.

LIN Z T, WANG H Y, LIN Y H, et al.. A new structure of p-GaN/InGaN heterojunction to enhance hole injection for blue GaN-based LEDs[J]. Appl. Phys. D, 2016, 49(28):285106-1-7.

JEONG H, PARK D J, LEE H S, et al.. Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays[J]. Nanoscale, 2014, 6(8):4371-4378.

LINT H, WANG S J, TU Y C, et al.. Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface[J]. Mater. Sci. Semicond. Process, 2016, 45:69-75.

ZHU P F, LIU G Y, ZHANG J, et al.. FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays[J]. J. Display Technol., 2013, 9(5):317-323.

ZOU X B, ZHANG X, CHONG W C, et al.. Vertical LEDs on rigid and flexible substrates using GaN-on-Si epilayers and Au-free bonding[J]. IEEE Trans. Electron Dev., 2016, 63(4):1587-1593.

LIU Z, ZHU C R, WANG Y J, et al.. Light emitting enhancement and angle-resolved property of surface textured GaN-based vertical LED[J]. J. Opt., 2016, 45(1):81-86.

LAUBSCH A, SABATHIL M, BAUR J, et al.. High-power and high-efficiency InGaN-based light emitters[J]. IEEE Trans. Electron., 2010, 57(1):79-87.

CHIANG Y C, LIN CC, KUO H C. Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light[J]. Nanoscale Res. Lett., 2015, 10:182.

HAHN B, GALLER B, ENGL K. Development of high-efficiency and high-power vertical light emitting diodes[J]. Jpn. J. Appl. Phys., 2014, 53(10):100208-1-6.

CHIANG Y C, LIN B C, CHEN K J, et al.. Innovative fabrication of wafer-level InGaN-based thin-film flip-chip light-emitting diodes[J]. IEEE Photon. Technol. Lett., 2015, 27(13):1457-1460.

HU X L, QI Z Y, WANG H, et al.. Performance of InGaN-based thin-film LEDs with flip-chip configuration and concavely patterned surface fabricated on electroplating metallic substrate[J]. IEEE Photonics J., 2016, 8(1):1600307-1-8.

YAO Y C, HWANG J M, YANGZ Z P, et al.. Enhanced external quantum efficiency in GaN-based vertical type light-emitting diodes by localized surface plasmons[J]. Sci. Rep., 2016, 6:22659-1-9.

SHEN Y C, WIERER J J, KRAMES M R, et al.. Optical cavity effects in InGaN/GaN quantum-well-hetero structure flip-chip light-emitting diodes[J]. Appl. Phys. Lett., 2003, 82(14):2221-2223.

ZHU P F, TANSU N. Resonant cavity effect optimization of Ⅲ-nitride thin-film flip-chip light-emitting diodes with microsphere arrays[J]. Appl. Opt., 2015, 54(20):6315-6312.

MANAK I S, KARASEV D V, KONONENKO V K, et al.. Polarization characteristics of quantum-well semiconductor structures[J]. SPIE, 1997, 3094:2-17.

DING Q A, LI K, KONG F M, et al.. Improving the vertical light-extraction efficiency of GaN-based thin-film flip-chip LEDs with p-side deep-hole photonic crystals[J]. J. Display Technol., 2014, 10(11):909-916.

FUJII T, GAO Y, SHARMA R, et al.. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening[J]. Appl. Phys. Lett., 2004, 84(6):855-857.

HSU S Y, CHEN C C, WU G M. Simulation of metallic photonic crystal triangular arrays embedded in GaN light emitting diodes[C]. Proceedings of The 2015 International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, China, 2015, 151(7):63-64.

BURDETTL, JONES M, RYAN M, et al.. Efficiency of 2D photonic crystal emitters in thermo photovoltaic systems[J]. PAM Rev.:Energy Sci. Technol., 2016, 3:153-162.

RYU H Y. Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light emitting diodes via the Purcell effect[J]. Opt. Express, 2015, 23(19):A1157-A1166.

WIERER J J, DAVID A, MEGENS M M, et al.. Ⅲ-nitride photonic-crystal light-emitting diodes with high extraction efficiency[J]. Nat. Photon., 2009, 3(3):163-169.

CAI Z Y, SMITH N L, ZHANG J T, et al.. Two-dimensional photonic crystal chemical and biomolecular sensors[J]. Anal. Chem., 2015, 87(10):5013-5025.

YANG Y, JI Q B, ZONG H, et al.. Design of a tandem distributed Bragg reflectors specialized for enhancing the efficiency of GaN-based ultraviolet light-emitting diodes[J]. Opt. Commun., 2016, 374:80-83.

WANG L C, GUO E Q, LIU Z Q, et al.. Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface[J]. J. Semicond., 2011, 32(2):024009-1-4.

LAI Y Y, HSU S C, CHANG H S, et al.. The study of wet etching on GaN surface by potassium hydroxide solution[J]. Res. Chem. Intermed., 2016, doi:10.1007/s11164-016-2430-1.

LIN T H, WANG S J, TU Y C, et al.. Enhanced light output of GaN-based thin-film flip-chip light-emitting diodes by surface texturing using laser ablation and chemical etching[C]. Proceedings of 201573rd Annual Device Research Conference, Columbus, Ohio, 2015:123-124.

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