Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers

LIAO Yi-ru; GUAN Bao-lu; LI Jian-jun; LIU Chu; MI Guo-xin; XU Chen

doi:10.3788/fgxb20173803.0331

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Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers

更新时间：2020-08-12

- Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers
- Chinese Journal of Luminescence Vol. 38, Issue 3, Pages: 331-337(2017)
- 作者机构：
  
  北京工业大学光电子技术教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
  
  Supported by Semiconductor Laser Industrialization Technology Fund(YXBGD20151JL01)
- DOI：10.3788/fgxb20173803.0331
  CLC： TN248.4
- Received：13 September 2016，
  
  Revised：21 October 2016，
  
  Published：05 March 2017
- 稿件说明：
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廖翌如, 关宝璐, 李建军等. 低阈值852 nm半导体激光器的温度特性[J]. 发光学报, 2017,38(3): 331-337

LIAO Yi-ru, GUAN Bao-lu, LI Jian-jun etc. Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2017,38(3): 331-337
廖翌如, 关宝璐, 李建军等. 低阈值852 nm半导体激光器的温度特性[J]. 发光学报, 2017,38(3): 331-337 DOI： 10.3788/fgxb20173803.0331.

LIAO Yi-ru, GUAN Bao-lu, LI Jian-jun etc. Thermal Characteristics of The Low Threshold 852 nm Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2017,38(3): 331-337 DOI： 10.3788/fgxb20173803.0331.

摘要

通过金属有机化学气相淀积（MOCVD）和半导体后工艺技术制备了852 nm半导体激光器，它在室温下的阈值电流为57.5 mA，输出的光谱线宽小于1 nm。测试分析了激光器的输出光功率、阈值电流、电压、输出中心波长随温度的变化。测试结果表明，当温度变化范围为293~328 K时，阈值电流的变化速率为0.447 mA/K，特征温度

为142.25 K，输出的光功率变化率为0.63 mW/K。通过计算求得理想因子

为2.11，激光器热阻为77.7 K/W，中心波长漂移速率是0.249 29 nm/K，实验得出的中心波长漂移速率与理论计算结果相符。实验结果表明，该半导体器件在293~303 K的温度范围内，各特性参数能够保持相对良好的状态。器件如果工作在高温环境，需要添加控温设备以保证器件在良好状态下运行。

Abstract

852 nm semiconductor laser was manufactured by metal organic chemical vapor deposition (MOCVD) and semiconductor subsequent technology. The threshold current of this laser was 57.5 mA

output spectral line width was less than 1 nm at room temperature. The impact of temperature on output optical power

threshold current

voltage

output centre wavelength was analyzed. When the temperature changes from 293 to 328 K

the characteristic temperature is 142.25 K

and the rates of the threshold current change and output light power are 0.447 mA/K and 0.63 mW/K

respectively. Ideal factor

is calculated to be 2.11

while the laser thermal resistance is calculated to be 77.7 K/W. The calculated center wavelength drift rate is 0.249 29 nm/K

corresponding well to the measured value in the experiment. Experimental results demonstrate that the relevant parameters of this laser are stable with the temperature ranging from 293 to 303 K. However

a temperature device is needed if a higher working temperature is required.

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Keywords

references

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