Influence of Localized Surface Plasmons on The Photoluminescence Efficiency of InGaN/GaN Multiple Quantum Wells

XU Heng; YAN Long; LI Ling; ZHANG Yuan-tao; ZHANG Bao-lin

doi:10.3788/fgxb20173803.0324

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Influence of Localized Surface Plasmons on The Photoluminescence Efficiency of InGaN/GaN Multiple Quantum Wells

更新时间：2020-08-12

- Influence of Localized Surface Plasmons on The Photoluminescence Efficiency of InGaN/GaN Multiple Quantum Wells
- Chinese Journal of Luminescence Vol. 38, Issue 3, Pages: 324-330(2017)
- 作者机构：
  
  集成光电子学国家重点联合实验室吉林大学电子科学与工程学院, 吉林长春 130012
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20173803.0324
  CLC： TN383+.1
- Received：29 September 2016，
  
  Revised：11 November 2016，
  
  Published：05 March 2017
- 稿件说明：
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许恒, 闫龙, 李玲等. 局域表面等离激元对InGaN/GaN多量子阱发光效率的影响[J]. 发光学报, 2017,38(3): 324-330

XU Heng, YAN Long, LI Ling etc. Influence of Localized Surface Plasmons on The Photoluminescence Efficiency of InGaN/GaN Multiple Quantum Wells[J]. Chinese Journal of Luminescence, 2017,38(3): 324-330
许恒, 闫龙, 李玲等. 局域表面等离激元对InGaN/GaN多量子阱发光效率的影响[J]. 发光学报, 2017,38(3): 324-330 DOI： 10.3788/fgxb20173803.0324.

XU Heng, YAN Long, LI Ling etc. Influence of Localized Surface Plasmons on The Photoluminescence Efficiency of InGaN/GaN Multiple Quantum Wells[J]. Chinese Journal of Luminescence, 2017,38(3): 324-330 DOI： 10.3788/fgxb20173803.0324.

摘要

Ag纳米粒子的形貌对InGaN/GaN多量子阱（MQWs）的光致发光（PL）效率有着显著影响。本文采用离子束沉积（IBD）技术将Ag沉积在InGaN/GaN MQWs上，然后通过快速热退火处理制备Ag纳米粒子。通过改变Ag的沉积时间获得了具有不同Ag纳米粒子形貌的样品。用原子力显微镜对各样品的Ag纳米粒子形貌和尺寸进行了表征，并且测试了吸收谱、室温和变温PL谱及时间分辨光致发光（TRPL）谱。结果表明：随着Ag沉积时间的延长，所得Ag纳米粒子粒径增大，粒子纵横比先增大后减小且吸收谱峰红移。由于不同形貌的Ag纳米粒子在入射光作用下产生的局域表面等离激元（LSPs）与MQWs中激子耦合强度不同，光发射能力也不同，与没有Ag纳米粒子的样品相比，沉积时间为15 s的样品室温PL积分强度被抑制6.74倍，沉积时间为25 s和35 s的样品室温PL积分强度分别增强1.55和1.72倍且峰位发生红移，沉积时间为45 s的样品室温PL积分强度基本没有变化。TRPL与变温PL的测试结果证明，室温PL积分强度的改变是由于LSPs与MQWs中的激子耦合作用引起的。纵横比大且吸收谱与MQWs的PL谱交叠大的Ag纳米粒子能够更好地增强InGaN/GaN MQWs的发光。

Abstract

The morphology of Ag nanoparticles influences the photoluminescence (PL) efficiency of InGaN/GaN multiple quantum wells (MQWs) dramatically. In this paper

the ion beam deposition (IBD) technique was employed to deposit Ag on the surface of InGaN/GaN MQWs

and then Ag nanoparticles were fabricated by thermal annealing process. Ag nanoparticles with different morphology were obtained by adjusting the deposition time. For each sample

the morphology of Ag nanoparticles was characterized by AFM. In addition

the absorbance spectra

room and variable temperature PL spectra and time resolved PL (TRPL) spectra were carried out to determine the optical properties of the samples. The results show that the diameters of Ag nanoparticles increase with the increasing of deposition time

and the aspect ratio increases first and then decreases. Moreover

a red shift of the absorption peak of Ag nanoparticles is observed. Compared with the sample without Ag nanoparticles

the room temperature PL integrated intensity of the sample with Ag deposition time of 15 s is suppressed 6.74 times. For the samples with Ag deposition time of 25 s and 35 s

the PL integrated intensities are enhanced 1.55 and 1.72 times

respectively. Meanwhile

a red shift occurs in the peak position. Whereas

there is no obvious change in PL integrated intensity for the sample with Ag deposition time of 45 s. This phenomenon can be attributed to the difference morphology of Ag nanoparticles on each sample. The morphology of Ag nanoparticles influences the coupling strength between the localized surface plasmons (LSPs) in Ag nanopaticles and the excitons in MQWs. The light scatting ability of Ag nanoparticles is also influenced by its morphology. The measurement results of TRPL and variable temperature PL demonstrate that the change of room temperature PL integrated intensity is induced by the coupling between LSPs and the excitons in MQWs. Finally

it is found that Ag nanoparticles with bigger aspect ratio and absorption spectrum overlap PL spectrum of MQWs more can better enhance the PL intensity of InGaN/GaN MQWs.

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references

NAKAMURA S. Recent developments in InGaN-based blue LEDs and LDs[J]. Proc. Jabloński Centennial Conf., Toruń., 1999, 95:153-164.

HORI A, YASUNAGA D, SATAKE A, et al.. Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes[J]. Appl. Phys. Lett., 2001, 79(22):3723-3725.

PARK J Y, LEE J H, JUNG S, et al.. InGaN/GaN-based green-light-emitting diodes with an inserted InGaN/GaN-graded superlattice layer[J]. Phys. Stat. Sol.(a), 2016, 213(6):1610-1614.

WEN P Y, ZHANG S M, LIU J P, et al.. Investigation of InGaN/GaN laser degradation based on luminescence properties[J]. J. Appl. Phys., 2016, 119(21):213107.

LI J M, LIU Z, LIU Z Q, et al.. Advances and prospects in nitrides based light-emitting-diodes[J]. J. Semicond., 2016, 37(6):061001-1-14.

林异株. 利用表面等离激元技术提高发光二极管发光效率的研究[D]. 济南:山东大学, 2011. LIN Y Z. The Research on The Improvement of Lighting Efficiency of LED by Surface Plasmon Technique[D]. Jinan:Shandong University, 2011. (in Chinese)

黄华茂, 黄江柱, 胡晓龙, 等. 纳米柱高度对GaN基绿光LED光致发光谱的影响[J]. 发光学报, 2016, 37(8):967-972. HUANG H M, HUANG J Z, HU X L, et al.. Effects of the height of nanorod structure on the photoluminescence spectra of GaN-based green LED[J]. Chin. J. Lumin., 2016, 37(8):967-972. (in Chinese)

LEI Y, LIU Z Q, HE M, et al.. Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers[J]. J. Semicond., 2015, 36(5):054006-1-4.

ESTRIN Y, RICH D H, KELLER S, et al.. Observations of exciton-surface plasmon polariton coupling and exciton-phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films[J]. J. Phys.:Condens. Matter, 2015, 27(26):265802-1-13.

OKAMOTO K, NIKI I, SCHERER A, et al.. Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy[J]. Appl. Phys. Lett., 2005, 87(7):071102-1-3.

KUO Y, SU C Y, HSIEH C, et al.. Surface plasmon coupling for suppressing p-GaN absorption and TM-polarized emission in a deep-UV light-emitting diode[J]. Opt. Lett., 2015, 40(18):4229-4232.

FADIL A, LIDA D, CHEN Y T, et al.. Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence[J]. J. Lumin., 2016, 175:213-216.

KREIBIG U, VOLLMER M. Optical Properties of Metal Clusters[M]. New York:Springer Press, 1995.

BORISKINA S V, GHASEMI H, CHEN G. Plasmonic materials for energy:from physics to applications[J]. Mater. Today, 2013, 16(10):375-386.

JIANG S, HU Z, CHEN Z Z, et al.. Resonant absorption and scattering suppression of localized surface plasmons in Ag particles on green LED[J]. Opt. Express, 2013, 21(10):12100-12110.

LU C H, WU S E, LAI Y L, et al.. Improved light emission of GaN-based light-emitting diodes by efficient localized surface plasmon coupling with silver nanoparticles[J]. J. Alloys Compd., 2014, 585:460-464.

LEE K S, LEE D U, KIM E K. Enhancement of photoluminescence efficiency from semi-polar InGaN/GaN multiple quantum wells with silver metal[J]. J. Lumin., 2015, 162:115-118.

TRIPATHY S, SALE T E, DADGAR A, et al.. GaN-based microdisk light emitting diodes on(111)-oriented nanosilicon-on-insulator templates[J]. J. Appl. Phys., 2008, 104(5):053106-1-7.

MYROSHNYCHENKO V, RODRGUEZ-FERNNDEZ J, PASTORIZA-SANTOS I, et al.. Modelling the optical response of gold nanoparticles[J]. Chem. Soc. Rev., 2008, 37(9):1792-1805.

陈丽华, 徐刚, 徐雪青, 等. Ag纳米粒子生长动力学的局域表面等离子体共振研究[J]. 高校化学学报, 2009, 23(2):284-289. CHEN L H, XU G, XU Y Q, et al.. Growth kinetics of Ag nanoparticles studied by localized surface plasmon resonance[J]. J. Chem. Eng. Chin. Univ., 2009, 23(2):284-289. (in Chinese)

HONG S H, KIM J J, KANG J W, et al.. Enhanced optical output of InGaN/GaN near-ultraviolet light-emitting diodes by localized surface plasmon of colloidal silver nanoparticles[J]. Nanotechnology, 2015, 26(38):385204-1-6.

OKAMOTO K, NIKI I, SHVARTSER A, et al.. Surface-plasmon-enhanced light emitters based on InGaN quantum wells[J]. Nat. Mater., 2004, 3(9):601-605.

LIDA D, FADIL A, CHEN Y T, et al.. Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles[J]. AIP Adv., 2015, 5(9):097169. 许恒(1990-),男,吉林长春人,硕士研究生,2014年于吉林大学获得学士学位,主要从事GaN基宽禁带半导体材料与器件的研究。E-mail:xuheng19000@163.com张源涛(1976-),男,吉林长春人,博士,教授,2005年于吉林大学获得博士学位,主要从事GaN基宽禁带半导体材料与器件的研究。E-mail:zhangyt@jlu.edu.cn张宝林(1964-),男,吉林通化人,博士,教授,1999年于中国科学院长春物理研究所获得博士学位,主要从事半导体材料及器件的研究。E-mail:zbl@jlu.edu.cn

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