Research on Heating Uniformity of MOCVD Heating Device

XU Long-quan; FANG Song; TANG Zi-han; LIU Xin-wei

doi:10.3788/fgxb20173802.0220

您当前的位置：

首页 >

文章列表页 >

Research on Heating Uniformity of MOCVD Heating Device

更新时间：2020-08-12

- Research on Heating Uniformity of MOCVD Heating Device
- Chinese Journal of Luminescence Vol. 38, Issue 2, Pages: 220-225(2017)
- 作者机构：
  
  1. 南昌大学国家硅基LED工程技术研究中心, 江西南昌 330047
  2. 南昌大学信息工程学院, 江西南昌 330031
- 作者简介：
- 基金信息：
  
  Supported by National High Technology Research and Development Program(863) (2012AA041002);Major Science and Technology Project of Jiangxi Provincial Science and Technology Department (20114ABF06102)
- DOI：10.3788/fgxb20173802.0220
  CLC： TN305
- Received：18 July 2016，
  
  Revised：25 November 2016，
  
  Published：05 February 2017
- 稿件说明：
移动端阅览
徐龙权, 方颂, 唐子涵等. MOCVD反应室温度均匀性的研究[J]. 发光学报, 2017,38(2): 220-225

XU Long-quan, FANG Song, TANG Zi-han etc. Research on Heating Uniformity of MOCVD Heating Device[J]. Chinese Journal of Luminescence, 2017,38(2): 220-225
徐龙权, 方颂, 唐子涵等. MOCVD反应室温度均匀性的研究[J]. 发光学报, 2017,38(2): 220-225 DOI： 10.3788/fgxb20173802.0220.

XU Long-quan, FANG Song, TANG Zi-han etc. Research on Heating Uniformity of MOCVD Heating Device[J]. Chinese Journal of Luminescence, 2017,38(2): 220-225 DOI： 10.3788/fgxb20173802.0220.

摘要

为研究一种有效提高MOCVD反应室温度均匀性的方法，针对自主研发的大型立式MOCVD反应室，建立二维模型，就激励电流对反应室温度均匀性的影响进行了分析。为提高温度均匀性，通过改变不同电参数来观察磁场及石墨盘表面径向温度的变化，发现电参数与加热效率成正比，但是与加热的均匀性成反比关系；在相同功率下，电流频率上升将导致温度均匀性下降。以上关系中反映出的合理的电参数，在保证反应温度的同时，保证了温度均匀性，有利于薄膜生长。

Abstract

In order to improve the temperature uniform in the reaction chamber of MOCVD

the two-dimensional model was established based on the vertical MOCVD reaction chamber researched by ourselves. Using the finite element method

the incentive effect of current on the reaction chamber temperature uniformity was analyzed. For purpose to improve the temperature uniformity

the change of magnetic field and graphite disk surface radial temperature were observed by changing the current intensity and frequency. It is found that the electrical parameter is proportional to the heating efficiency but inversely proportional to heating uniformity

Under the same power

the temperature uniformity decreases with the increasing of the current frequency. Reasonable electrical parameters which reflect from above

ensure both reaction temperature and temperature uniformity

is conducive to the quality of thin film growth.

关键词

Keywords

references

ZHANG J C, LI Z M, HAO Y, et al.. Finite element analysis and optimization of temperature field in GaN-MOCVD reactor[J]. Sci. China Inform. Sci., 2010, 53(10):2138-2143.

ZHAO D M, ZHAO D G, JIANG D S, et al.. Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon[J]. J. Semicond., 2015, 36(6):063003.

QU Y X, WANG B, HU S G, et al.. Analysis and design of resistance-wire heater in MOCVD reactor[J]. J. Central South Univ., 2014, 21(9):3518-3524.

李志明. 感应加热式MOCVD反应室的仿真与设计[D]. 西安:西安电子科技大学, 2011. LI Z M. Simulation and Design on MOCVD Reactor by Induction Heating [D]. Xi'an:Xidian University, 2011. (in Chinese)

MAO Q H, LIU J L, WU X M, et al.. Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J]. J. Semicond., 2015, 36(9):093003.

金晓昌. 感应加热技术中的趋肤效应[J]. 武汉化工学院学报, 1995, 17(4):65-68. JIN X C. Skin effect in inducting heating[J]. J. Wuhan Inst. Chem. Technol., 1995, 17(4):65-68. (in Chinese)

CHEN X L, YAN C B, GENG X H, et al.. Modified textured surface MOCVD-ZnO:B transparent conductive layers for thin-film solar cells[J]. J. Semicond., 2014, 35(4):043002.

詹少彬. MOCVD加热系统研究[D]. 武汉:华中科技大学, 2008. LZHAN S B. Research on MOCVD Heating System [D]. Wuhan:Huazhong University of Science and Technology, 2008. (in Chinese)

Views

217

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells

Effect of Reaction Pressure Onmorphology Anisotropy of GaSb/GaAs Quantum Dots

Effect of Growth Temperature on Epitaxial ZnO Nanostructures by MOCVD

Effect of Growth Pressure of Quantum Wells on Photoelectric Properties of InGaN/GaN Yellow LED

Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates

Related Author

LU Hong-bo

LI Ge

LI Xin-yi

ZHANG Wei

HU Shu-hong

DAI Ning

XU De-qian

XU Jia-xin

Related Institution

University of Chinese Academy of Sciences

Shanghai Institute of Space Power-sources

Shanghai Institute of Technology Physics, Chinese Academy of Sciences

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰