Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET

ZHANG Guo-cheng; CHEN Hui-peng; GUO Tai-liang

doi:10.3788/fgxb20173802.0194

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Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET

更新时间：2020-08-12

- Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET
- Chinese Journal of Luminescence Vol. 38, Issue 2, Pages: 194-200(2017)
- 作者机构：
  
  1. 福州大学平板显示技术国家地方联合工程实验室, 福建福州 350102
  2. 福建工程学院信息科学与工程学院, 福建福州 350108
- 作者简介：
- 基金信息：
  
  Supported by National Key Research and Development Program of China(2016YFB0401103);National Natural Science Foundation of China(51503039);Natural Science Foundation of Fujian Province(2016J01749);Young Teacher Education Research Project of Fujian Province (JA15350)
- DOI：10.3788/fgxb20173802.0194
  CLC： TN321+.5
- Received：08 August 2016，
  
  Revised：19 September 2016，
  
  Published：05 February 2017
- 稿件说明：
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张国成, 陈惠鹏, 郭太良. 绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响[J]. 发光学报, 2017,38(2): 194-200

ZHANG Guo-cheng, CHEN Hui-peng, GUO Tai-liang. Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET[J]. Chinese Journal of Luminescence, 2017,38(2): 194-200
张国成, 陈惠鹏, 郭太良. 绝缘层修饰对喷墨打印有机场效应晶体管形貌和性能的影响[J]. 发光学报, 2017,38(2): 194-200 DOI： 10.3788/fgxb20173802.0194.

ZHANG Guo-cheng, CHEN Hui-peng, GUO Tai-liang. Impact of The Modification of Dielectric Layers on The Morphlogy and Device Performance of Inkjet-printed OFET[J]. Chinese Journal of Luminescence, 2017,38(2): 194-200 DOI： 10.3788/fgxb20173802.0194.

摘要

通过对OTFT绝缘层SiO

表面分别采用十八烷基三氯硅烷（OTS）处理和原子层沉积薄层氧化铝的修饰方式，制备了喷墨打印有机薄膜晶体管并研究了修饰前后绝缘层的表面形貌、接触角及有源层的物相结构。虽然绝缘层的表面形貌在修饰前后变化不大，但是表面接触角和打印后有源层的物相结构有较大差别。OTS处理和沉积氧化铝修饰后，器件的迁移率比修饰前分别增大了4倍和9倍，而开关比则分别增大了1个和4个数量级。修饰后的最大迁移率可达0.35 cm

/（Vs），开关比可达6.010

。

Abstract

OTFT devices were fabricated through inkjet printing active layer on SiO

dielectric. To improve the device performance

SiO

layer was modified with octadecyltrichlorosilane (OTS) or a thin layer of Al

(1 nm) by atomic layer deposition. The surface morphology

contact angle of PDVT-8 solution on the dielectric layer

and the crystalline of the inkjet printing active layers were examined. The surface morphology of the modified dielectric layer is slightly various with SiO

layer

while the contact angle and crystalline of the inkjet printing active layer change significantly. For OTS-treated dielectric layer and ALD Al

-treated dielectric layer

the mobility increases 4 times and 9 times

while the on/off current ratio increases 1 order of magnitude and 4 orders of magnitude

respectively

The maximum value of mobility and the on/off current ratio are 0.35 cm

/(Vs) and 6.010

关键词

Keywords

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