Electron Beam Radiation Effects on CMOS Active Pixel Sensor

MA Li-ya; LI Yu-dong; GUO Qi; LIU Chang-ju; WEN Lin; WANG Bo

doi:10.3788/fgxb20173802.0182

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Electron Beam Radiation Effects on CMOS Active Pixel Sensor

更新时间：2020-08-12

- Electron Beam Radiation Effects on CMOS Active Pixel Sensor
- Chinese Journal of Luminescence Vol. 38, Issue 2, Pages: 182-187(2017)
- 作者机构：
  
  1. 中国科学院大学, 北京 100049
  2. 中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 中国科学院新疆理化技术研究所, 新疆乌鲁木齐 830011
  3. 重庆光电技术研究所, 重庆 400060
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(11005152,11275262)
- DOI：10.3788/fgxb20173802.0182
  CLC： TN29
- Received：22 August 2016，
  
  Revised：21 September 2016，
  
  Published：05 February 2017
- 稿件说明：
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玛丽娅, 李豫东, 郭旗等. CMOS有源像素图像传感器的电子辐照损伤效应研究[J]. 发光学报, 2017,38(2): 182-187

MA Li-ya, LI Yu-dong, GUO Qi etc. Electron Beam Radiation Effects on CMOS Active Pixel Sensor[J]. Chinese Journal of Luminescence, 2017,38(2): 182-187
玛丽娅, 李豫东, 郭旗等. CMOS有源像素图像传感器的电子辐照损伤效应研究[J]. 发光学报, 2017,38(2): 182-187 DOI： 10.3788/fgxb20173802.0182.

MA Li-ya, LI Yu-dong, GUO Qi etc. Electron Beam Radiation Effects on CMOS Active Pixel Sensor[J]. Chinese Journal of Luminescence, 2017,38(2): 182-187 DOI： 10.3788/fgxb20173802.0182.

摘要

对某国产CMOS图像传感器进行了两种不同能量的电子辐照试验，在辐照前后及退火过程中采用离线测量方法，考察了暗信号、饱和电压、光谱响应特性等参数，分析了器件的电子辐照效应损伤机理。结果表明：暗信号和暗信号非均匀性都随着辐照剂量的增加及高温退火时间的延长而增大；饱和电压在两种能量电子辐照下均出现较大幅度的减小，并在高温退火过程中有所恢复；光谱响应特性无特别明显变化。经分析，暗电流、饱和电压的变化主要由辐照诱发的氧化物陷阱电荷导致的光敏二极管耗尽层展宽和界面陷阱电荷密度增大导致产生-复合中心的增加所引起。

Abstract

Electron beam irradiation experiments were taken on the domestic CMOS image sensors

the irradiation effect and damage mechanism of the devices were analyzed. By using off-line measuring method before and after irradiation and in the process of annealing

the parameters such as dark signal

saturated voltage

spectral response characteristics were measured. The experiment results show that the non-uniformity of dark signal and dark current increase with the increase of irradiation dose and high temperature annealing time. The saturation voltages reduce significantly under the electron beam irradiation and recover in the process of high temperature annealing. There is no significant change for spectral response characteristics before and after the irradiation. The changes of the dark current

saturation voltage are due to the broadening of the photodiode depletion layer caused by irradiation-induced oxide trapped charge and the increase of recombination centers caused by irradiation-induced interface states.

关键词

Keywords

references

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