Thermal Design of High Power Remote Phosphor White LED Package

CHEN Hua; ZHOU Xing-lin; TANG Wen; LYU Yue-jing

doi:10.3788/fgxb20173801.0097

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Thermal Design of High Power Remote Phosphor White LED Package

更新时间：2020-08-12

- Thermal Design of High Power Remote Phosphor White LED Package
- Chinese Journal of Luminescence Vol. 38, Issue 1, Pages: 97-102(2017)
- 作者机构：
  
  武汉科技大学汽车与交通工程学院,湖北武汉,430223
- 作者简介：
- 基金信息：
  
  Supported by Natural Science Fund of Hubei Province(2015CFB220);Science and Techno
- DOI：10.3788/fgxb20173801.0097
  CLC： TN312.8
- Received：28 September 2016，
  
  Revised：08 November 2016，
  
  Published：05 January 2017
- 稿件说明：
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陈华, 周兴林, 汤文等. 大功率远程荧光粉型白光LED散热封装设计[J]. 发光学报, 2017,38(1): 97-102

CHEN Hua, ZHOU Xing-lin, TANG Wen etc. Thermal Design of High Power Remote Phosphor White LED Package[J]. Chinese Journal of Luminescence, 2017,38(1): 97-102
陈华, 周兴林, 汤文等. 大功率远程荧光粉型白光LED散热封装设计[J]. 发光学报, 2017,38(1): 97-102 DOI： 10.3788/fgxb20173801.0097.

CHEN Hua, ZHOU Xing-lin, TANG Wen etc. Thermal Design of High Power Remote Phosphor White LED Package[J]. Chinese Journal of Luminescence, 2017,38(1): 97-102 DOI： 10.3788/fgxb20173801.0097.

摘要

针对大功率远程荧光粉型白光LED存在的散热问题，研究了其封装结构的散热设计方法。在分析现有远程荧光粉型白光LED封装结构及散热特点的基础上，提出将荧光粉层与芯片热隔离的同时开辟独立的荧光粉层散热路径的热设计方法。仿真分析结果表明：新的设计能够在不增加灯珠径向尺寸的同时改善荧光粉层的散热能力。在相同边界条件下，改进设计后的荧光粉层温度较改进前降低了10.7℃，芯片温度降低了0.55℃。在芯片基座上设置热隔离槽对芯片和荧光粉层温度的影响可以忽略。为了达到最优的芯片和荧光粉层温度配置，对荧光粉层与芯片之间封装胶层厚度进行优化是必要的。新的封装方法将芯片和荧光粉层的散热问题相互独立出来，既避免了二者的相互加热问题，又增加了灯珠光学设计的自由度。

Abstract

Aiming at the heat dissipation problem of the high power remote phosphor white LED

the heat dissipation method of the package structure was studied. Based on the structure of the phosphor type white LED package and its characteristics of heat dissipation

a thermal managing method of the package was put forward

which both thermally insulated the chip and the phosphor layer and created a independent thermal dissipation path for the phosphor layer. The simulation results show that the redesigned package reduces the chip temperature by 0.55℃ and the phosphor layer temperature by 10.7℃ under the same boundary condition

indicating that the new design can reduce the phosphor layer temperature without increasing the radius dimension of the package. The effect of the thermal isolation groove on the chip base can be ignored. To achieve the optimal chip and phosphor layer temperatures distribution

the thickness of the insulation layer between the chip and the phosphor should be optimized. The new method makes the thermal management problems of the chip and the phosphor layer independent to each other

which avoids the mutual heating problems of the two

and also increases the optical design freedom of the lamp.

关键词

Keywords

references

LUO X B, XING F, FEI C, et al.. Phosphor self-heating in phosphor converted light emitting diode packaging[J]. Int. J. Heat Mass Transfe r, 2013, 58(1-2):276-281.

LI B C, ZHANG D W, HUANG Y S, et al.. A new structure of multi-layer phosphor package of white LED with high efficiency[J]. Chin. Opt. Lett., 2010, 8(2):221-223.

YAN B H, TRAN N T, YOU J P, et al.. Can junction temperature alone characterize thermal performance of white LED emitters[J]. Photon Technol. Lett., 2011, 23(9):555-557.

LAGO M D, MENEGHINI M, TRIBELLIN N, et al.. Phosphors for LED-based light sources:thermal properties and reliability issues[J]. Microelectron. Reliab., 2012, 52:2164-2167.

TRAN N T, SHI F G. Studies of phosphor concentration and thickness for phosphor-based white light-emitting-diodes[J]. J. Lightwave Technol., 2008, 26(21):3556-3559.

殷录桥, 翁菲, 宋朋, 等. LED芯片与YAG荧光粉的相互热作用[J]. 光学学报, 2014, 34(3):0323002-1-7. YIN L Q, WENG F, SONG P, et al.. Thermal interact effects of LED chip with YAG phosphor layer[J]. Acta Opt. Sinica, 2014, 34(3):0323002-1-7. (in Chinese)

LUO X B, FU X F, CHEN F, et al.. Phosphor self-heating in phosphor converted light emitting diode packaging[J]. Int. J. Heat Mass Transfer, 2013, 58:276-281.

胡润. LED封装中荧光粉光热耦合研究及工艺应用[D]. 武汉:华中科技大学, 2015. HU R. Optical-thermal Coupled Study on Phosphors in LED Packages with Process Applications [D]. Wuhan:Huazhong University of Science and Technology, 2015. (in Chinese)

周青超, 柏泽龙, 鲁路, 等. 白光LED远程荧光粉技术研究进展与展望[J]. 中国光学, 2015, 8(3):313-328. ZHOU Q CH, BAI Z L, LU L, et al.. Remote phosphor technology for white LED applications:advances and prospects[J]. Chin. Opt., 2015, 8(3):313-328. (in Chinese)

肖华, 吕毅军, 朱丽虹, 等. 远程荧光体白光发光二极管的发光性能[J]. 光子学报, 2014, 43(5):0523003. XIAO H, LV Y J, ZHU L H, et al.. Luminous performance of remote phosphor white LED[J]. Acta Photon. Sinica, 2014, 43(5):0523003. (in Chinese)

HWANG J H, KIM Y D, KIM J W, et al.. Study on the effect of the relative position of the phosphor layer in the LED package on the high power LED lifetime[J]. Phys. Stat. Sol. (c), 2010, 7:2157-2161.

MENEGHINI M, LAGO M D, TRIVELLIN N, et al.. Thermally activated degradation of remote phosphors for application in LED lighting[J]. IEEE Trans. Dev. Mater. Reliab., 2013, 13(1):316-319.

车振, 张军, 余新宇, 等. 白光LED荧光粉层的光学设计及研究[J]. 发光学报, 2015, 36(10):1220-1227. CHE Z, ZHANG J, YU X Y, et al.. Optical design and research on phosphors for white LED[J]. Chin. J. Lumin, 2015, 36(10):1220-1227. (in Chinese)

胡金勇, 黄华茂, 王洪, 等. ITO表面粗化提高GaN基LED芯片出光效率[J]. 发光学报, 2014, 35(5):613-617. HU J Y, HUANG H M, WANG H, et al.. Light-output enhancement of GaN-based light-emitting diodes with surface textured ITO[J]. Chin. J. Lumin., 2014, 35(5):613-617. (in Chinese)

PERERA I U, NARENDRAN N. Understanding heat dissipation of a remote phosphor layer in an LED system[C]. IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, Orlando, USA, 2014:186-192.

HUANG M, YANG L. Heat generation by the phosphor layer of high-power white LED emitters[J]. IEEE Photon. Technol.Lett., 2013, 25(14):1316-1320.

PERERA I U, NARENDRAN N. Mathematical model to analyze phosphor layer heat transfer of an LED system[J]. SPIE, 2014, 9190:91900R-1-7.

杨呈祥, 李欣, 孔亚飞, 等. 纳米银焊膏封装大功率COB LED模块的性能研究[J]. 发光学报, 2016, 37(1):94-99. YANG C X, LI X, KONG Y F, et al.. High power COB LED modules attached by nanosilver paste[J]. Chin. J. Lumin., 2016, 37(1):94-99. (in Chinese)

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