Graphene-ZnO Nanowires Based Complex Electorde Used as Transparency Conductive Layer in GaN LED

XU Kun; WANG Yi-fan; XIE Yi-yang; DING Pei; DU Yin-xiao

doi:10.3788/fgxb20163712.1554

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Graphene-ZnO Nanowires Based Complex Electorde Used as Transparency Conductive Layer in GaN LED

更新时间：2020-08-12

- Graphene-ZnO Nanowires Based Complex Electorde Used as Transparency Conductive Layer in GaN LED
- Chinese Journal of Luminescence Vol. 37, Issue 12, Pages: 1554-1559(2016)
- 作者机构：
  
  1. 郑州航空工业管理学院理学院,河南郑州,450046
  2. 国家知识产权局专利局专利审查协作河南中心,河南郑州,450043
  3. 北京工业大学电控学院北京,100124
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163712.1554
  CLC： TN383
- Received：21 July 2016，
  
  Revised：20 September 2016，
  
  Published：10 December 2016
- 稿件说明：
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许坤, 王一帆, 解意洋等. 基于石墨烯-ZnO纳米线的复合电极在GaN LED中的应用[J]. 发光学报, 2016,37(12): 1554-1559

XU Kun, WANG Yi-fan, XIE Yi-yang etc. Graphene-ZnO Nanowires Based Complex Electorde Used as Transparency Conductive Layer in GaN LED[J]. Chinese Journal of Luminescence, 2016,37(12): 1554-1559
许坤, 王一帆, 解意洋等. 基于石墨烯-ZnO纳米线的复合电极在GaN LED中的应用[J]. 发光学报, 2016,37(12): 1554-1559 DOI： 10.3788/fgxb20163712.1554.

XU Kun, WANG Yi-fan, XIE Yi-yang etc. Graphene-ZnO Nanowires Based Complex Electorde Used as Transparency Conductive Layer in GaN LED[J]. Chinese Journal of Luminescence, 2016,37(12): 1554-1559 DOI： 10.3788/fgxb20163712.1554.

摘要

使用一维ZnO纳米线和二维石墨烯复合结构集成到p-GaN表面来同时实现电流扩展和提高LED光提取效率。通过两组有无ZnO纳米线器件的对比，发现ZnO纳米线使器件的光提取效率提高了30%.通过分析两组器件的开启电压、工作电压和反向漏电流等关键参数，验证了本结构应用于GaN LED不会恶化其电性能。本文所采用的复合结构用于GaN LED，同时达到了良好欧姆接触、避免使用ITO和增强出光的效果。

Abstract

By using one-dimensional ZnO nanowires and two-dimensional graphene composite structure to integrate onto p-GaN surface

the current expansion and the efficiency improvement of LED light extraction were both achieved. Comparing the devices with or without ZnO nanowires

it was found that ZnO nanowires could increase the light extraction efficiency of GaN LED by 30%. The key parameters

such as opening voltage

working voltage and reverse leakage current of the two type of devices were analyzed

and the results verified that the structure used in GaN LED didn't deteriorate the electrical properties of LED. The complex structure adopted in this paper for GaN LED can not only achieve a good Ohmic contact without the using of ITO

but also enhance the extraction of light.

关键词

Keywords

references

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