Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

ZHI Ting; TAO Tao; LIU Bin; ZHUANG Zhe; XIE Zi-li; CHEN Peng; ZHANG Rong; ZHENG You-dou

doi:10.3788/fgxb20163712.1538

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Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

更新时间：2020-08-12

- Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure
- Chinese Journal of Luminescence Vol. 37, Issue 12, Pages: 1538-1544(2016)
- 作者机构：
  
  南京大学电子科学与工程学院,江苏南京,210093
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163712.1538
  CLC： TP394.1;TN383+.1
- Received：23 July 2016，
  
  Revised：15 September 2016，
  
  Published：10 December 2016
- 稿件说明：
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智婷, 陶涛, 刘斌等. GaN基纳米阵列LED器件制备及发光特性[J]. 发光学报, 2016,37(12): 1538-1544

ZHI Ting, TAO Tao, LIU Bin etc. Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure[J]. Chinese Journal of Luminescence, 2016,37(12): 1538-1544
智婷, 陶涛, 刘斌等. GaN基纳米阵列LED器件制备及发光特性[J]. 发光学报, 2016,37(12): 1538-1544 DOI： 10.3788/fgxb20163712.1538.

ZHI Ting, TAO Tao, LIU Bin etc. Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure[J]. Chinese Journal of Luminescence, 2016,37(12): 1538-1544 DOI： 10.3788/fgxb20163712.1538.

摘要

为了降低GaN材料中因应变诱导的量子斯托克斯效应，增加器件有源区内的电子-空穴波函数在实空间的交叠从而提高GaN基LEDs的发光效率，采用紫外软压印技术制备了均匀的周期性纳米柱阵列结构，结合常规LED器件微加工技术获得了InGaN/GaN基蓝光与绿光纳米阵列LED器件并对其进行了表征分析。结果表明：纳米柱阵列LED器件具有均匀的发光和稳定的光电性能。纳米结构不仅有效缓解了量子阱中的应力积累（弛豫度~70%），提高了器件的辐射复合几率和出光效率，同时结合纳米柱侧壁的化学钝化处理进一步降低了器件有源区的缺陷密度，显著降低了LED器件的漏电流（~10

-7

），最终提高了器件的发光效率。

Abstract

In order to improve the emission efficiency of light-emitting diodes

reduce the quantum-confined Stark effect induced by stain

and increase the wave function overlap of electron and holes

InGaN/GaN based LEDs with array nanorods structure were fabricated by utilization of nanoimprint lithography (NIL) and nano-fabrication processes. It demonstrates the uniform and bight emission

lower leakage current (~10

-7

)

optimized turn on voltage (~3 V). The uniform electroluminescence (EL) of InGaN/GaN MQW NR arrays has been successfully achieved as well

with a slight blue shift compared to that of the planar devices due to the lower quantum-confined Stark effect. It is confirmed that the defects and dislocations density is lower

strain accumulated in the film is released

quantum-confined Stark effect is reduced(relaxed degree~70%)

and the wave function overlap of electron and holes is increased and light extraction efficiency is improved.

关键词

Keywords

references

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