Deep Centers in InPBi Thin Film Grown by Gas Source Molecular Beam Epitaxy

WANG Hai-long; WEI Zhi-lu; LI Yao-yao; WANG Kai; PAN Wen-wu; WU Xiao-yan; YUE Li; LI Shi-li

doi:10.3788/fgxb20163712.1532

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Deep Centers in InPBi Thin Film Grown by Gas Source Molecular Beam Epitaxy

更新时间：2020-08-12

- Deep Centers in InPBi Thin Film Grown by Gas Source Molecular Beam Epitaxy
- Chinese Journal of Luminescence Vol. 37, Issue 12, Pages: 1532-1537(2016)
- 作者机构：
  
  1. 山东省激光偏光与信息技术重点实验室, 曲阜师范大学物理工程学院, 山东曲阜,273165
  2. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室上海,200050
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163712.1532
  CLC： O474
- Received：13 August 2016，
  
  Revised：17 September 2016，
  
  Published：10 December 2016
- 稿件说明：
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王海龙, 韦志禄, 李耀耀等. 气源分子束外延生长的InPBi薄膜材料中的深能级中心[J]. 发光学报, 2016,37(12): 1532-1537

WANG Hai-long, WEI Zhi-lu, LI Yao-yao etc. Deep Centers in InPBi Thin Film Grown by Gas Source Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2016,37(12): 1532-1537
王海龙, 韦志禄, 李耀耀等. 气源分子束外延生长的InPBi薄膜材料中的深能级中心[J]. 发光学报, 2016,37(12): 1532-1537 DOI： 10.3788/fgxb20163712.1532.

WANG Hai-long, WEI Zhi-lu, LI Yao-yao etc. Deep Centers in InPBi Thin Film Grown by Gas Source Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2016,37(12): 1532-1537 DOI： 10.3788/fgxb20163712.1532.

摘要

利用深能级瞬态谱（DLTS）研究了气源分子束外延（GSMBE）生长的InP

材料中深能级中心的性质。在未有意掺杂的InP中测量到一个多数载流子深能级中心E

，E

的能级位置为

-0.38 eV，俘获截面为1.8710

-15

。在未有意掺杂的InP

0.9751

0.0249

中测量到一个少数载流子深能级中心H

，H

的能级位置为

+0.31 eV，俘获截面为2.8710

-17

。深中心E

应该起源于本征反位缺陷P

，深中心H

可能来源于形成的Bi原子对或者更复杂的与Bi相关的团簇。明确这些缺陷的起源对于InPBi材料在器件应用方面具有重要的意义。

Abstract

The properties of deep center in InP

grown by gas source molecular beam epitaxy(GSMBE) were firstly investigated using deep level transient spectroscopy (DLTS). For the sample of InP

peak is observed under majority-carriers filling pulse conditions. It locates at

-0.38 eV with capture cross section of 1.8710

-15

. For the sample of InP

0.9751

0.0249

peak is observed under minority-carriers filling pulse conditions. It locates at

+0.31 eV with capture cross section of 2.8710

-17

. The deep level E

is considered to originate from the intrinsic antisite of P

. The deep level H

is attributed to the formation of Bi pairs or complex Bi related clusters. It is very meaningful to make clear the causes of the two defects in the InP(Bi) materials for device application.

关键词

Keywords

references

CHAN W W, SAH C T. Defect centers in boron-implanted silicon[J]. J. Appl. Phys., 1971, 42(12):4768-4773.

许振嘉. 半导体的检测与分析[M]. 2版. 北京:科学出版社, 2007:201,583. XU Z J. Examination and Analysis of Semiconductor[M]. 2nd ed. Beijing:Science Press, 2007:201, 583. (in Chinese)

LANG D V. Deep-level transient spectroscopy:a new method to characterize traps in semiconductors[J]. J. Appl. Phys., 1974, 45(7):3023-3032.

黎兵,刘才,冯良桓,等. CdS/CdTe薄膜太阳电池的深能级瞬态谱和光致发光研究[J]. 物理学报, 2009, 58(3):1987-1991. LI B, LIU C, FENG L H, et al.. Deep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells[J]. Acta Phys. Sinica, 2009, 58(3):1987-1991. (in Chinese)

WANG H L, YANG F H, FENG S L, et al.. Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots[J]. Phys. Rev. B, 2000, 61(8):5530-5534.

王海龙,司俊杰,封松林. Ge0.4Si0.6/Si多量子阱与Ge/Si短周期超晶格样品中的深中心[J]. 半导体学报, 1999, 20(9):737-742. WANG H L, SI J J, FENG S L. Deep centers in Ge0.4Si0.6/Si multiple quantum well and Ge/Si strained superlattice[J]. Chin. J. Semicond., 1999, 20(9):737-742. (in Chinese)

YOSHIDA J, KITA T, WADA O, et al.. Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy[J]. Jpn. J. Appl. Phys., 2003, 42(2A):371-374.

SWEENEY S J, JIN S R. Bismide-nitride alloys:promising for efficient light emitting devices in the near-and mid-infrared[J]. J. Appl. Phys., 2013, 113(4):043110-1-6.

FRANCOEUR S, SEONG M J, MASCARENHAS A, et al.. Band gap of GaAs1-xBix, 0 <x phys.="" appl.="">[10] TIXIER S, ADAMCYK M, TIEDJE T, et al.. Molecular beam epitaxy growth of GaAs1-xBix[J]. Appl. Phys. Lett., 2003, 82(14):2245-2247.

OE K, OKAMOTO H. New semiconductor alloy GaAs1-xBix grown by metal organic vapor phase epitaxy[J]. Jpn. J. Appl. Phys., 1998, 37(11A):L1283-L1285.

MA K Y, FANG Z M, JAW D H, et al.. Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi[J]. Appl. Phys. Lett., 1989, 55(23):2420-2422.

OKAMOTO H, OE K. Growth of metastable alloy InAsBi by low-pressure MOVPE[J]. Jpn. J. Appl. Phys., 1998, 37(3B):1608-1613.

KOPACZEK J, KUDRAWIEC R, LINHART W M, et al.. Temperature dependence of the band gap of GaSb1-xBix alloys with 0 <x phys.="" appl.="" by="" determined="">[15] RAJPALKE M K, LINHART W M, BIRKETT M, et al.. Growth and properties of GaSbBi alloys[J]. Appl. Phys. Lett., 2013, 103(14):142106-1-4.

SONG Y X, WANG S M, SAHA ROY I, et al.. Growth of GaSb1-xBix by molecular beam epitaxy[J]. J. Vac. Sci. Technol. B, 2012, 30(2):02B114-1-7.

LEE J J, KIM J D, RAZEGHI M. Growth and characterization of InSbBi for long wavelength infrared photodetectors[J]. Appl. Phys. Lett., 1997, 70(24):3266-3268.

SONG Y X, WANG S M, SAHA ROY I, et al.. Molecular beam epitaxy growth of InSb1-xBix thin films[J]. J. Cryst. Growth, 2013, 378:323-328.

RAJPALKE M K, LINHART W M, BIRKETT M, et al.. High Bi content GaSbBi alloys[J]. J. Appl. Phys., 2014, 116(4):043511-1-5.

BERDING M A, SHER A, CHEN A B, et al.. Structural properties of bismuth-bearing semiconductor alloys[J]. J. Appl. Phys., 1988, 63(1):107-115.

GU Y, WANG K, ZHOU H F, et al.. Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy[J]. Nanoscale Res. Lett., 2014, 9(1):24.

WANG K, GU Y, ZHOU H F, et al.. InPBi single crystals grown by molecular beam epitaxy[J]. Sci. Rep., 2014, 4:5449.

WU X Y, CHEN X R, PAN W W, et al.. Anomalous photoluminescence in InP1-xBix[J]. Sci. Rep., 2016, 6:27867.

LIANG B W, LEE P Z, SHIH D W, et al.. Electrical properties of InP grown by gas-source molecular beam epitaxy at low temperature[J]. Appl. Phys. Lett., 1992, 60(17):2104-2106.

CIATTO G, YOUNG E C, GLAS F, et al.. Spatial correlation between Bi atoms in dilute GaAs1-xBix:from random distribution to Bi pairing and clustering[J]. Phys. Rev. B, 2008, 78(3):035325.

USMAN M, BRODERICK C A, LINDSAY A, et al.. Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs[J]. Phys. Rev. B, 2011, 84(24):245202.

ALBERI K, WU J, WALUKIEWICZ W, et al.. Valence-band anticrossing in mismatched Ⅲ-Ⅴ semiconductor alloys[J]. Phys. Rev. B, 2007, 75(4):045203.

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