Structural and Optical Properties of SnS2 Films Prepared by RF Magnetron Sputtering

LI Xue-liu; LIU Dan-dan; LIANG Qi; SHI Cheng-wu; YU Yong-qiang

doi:10.3788/fgxb20163712.1521

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Structural and Optical Properties of SnS₂ Films Prepared by RF Magnetron Sputtering

更新时间：2020-08-12

- Structural and Optical Properties of SnS₂ Films Prepared by RF Magnetron Sputtering
- Chinese Journal of Luminescence Vol. 37, Issue 12, Pages: 1521-1531(2016)
- 作者机构：
  
  1. 合肥工业大学电子科学与应用物理学院,安徽合肥,230009
  2. 合肥工业大学化学与化工学院,安徽合肥,230009
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163712.1521
  CLC： O484;TN304
- Received：04 July 2016，
  
  Revised：13 August 2016，
  
  Published：10 December 2016
- 稿件说明：
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李学留, 刘丹丹, 梁齐等. 射频磁控溅射法制备SnS2薄膜结构和光学特性的研究[J]. 发光学报, 2016,37(12): 1521-1531

LI Xue-liu, LIU Dan-dan, LIANG Qi etc. Structural and Optical Properties of SnS2 Films Prepared by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2016,37(12): 1521-1531
李学留, 刘丹丹, 梁齐等. 射频磁控溅射法制备SnS2薄膜结构和光学特性的研究[J]. 发光学报, 2016,37(12): 1521-1531 DOI： 10.3788/fgxb20163712.1521.

LI Xue-liu, LIU Dan-dan, LIANG Qi etc. Structural and Optical Properties of SnS2 Films Prepared by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2016,37(12): 1521-1531 DOI： 10.3788/fgxb20163712.1521.

摘要

采用射频磁控溅射法溅射SnS

靶，在玻璃基片上以不同射频功率和氩气压强制备一系列薄膜样品，研究了不同工艺条件对薄膜特性的影响。利用X射线衍射（XRD）和拉曼光谱（Raman）对薄膜样品的晶体结构和物相进行表征分析。利用X射线能量色散谱（EDS）、紫外-可见-近红外分光光度计（UV-Vis-NIR）对SnS

薄膜的化学组分、光学特性等进行测试，计算或分析了SnS

薄膜样品的组分原子比、光学常数和光学带隙。结果表明：制备SnS

薄膜的最佳工艺条件为射频功率60 W、氩气压强0.5 Pa。在该条件下，所制备的SnS

薄膜沿（001）晶面择优取向生长，可见光透过率和折射率较高，消光系数较小，直接带隙为2.81 eV。在此基础上，进一步制备了n-SnS

/p-Si异质结器件。器件具有良好的整流特性及弱光伏特性，反向光电流随光照强度的增加而增大。器件的光电导机制是由SnS

禁带中陷阱中心的指数分布所控制。

Abstract

A series of SnS

thin films were deposited on glass substrates by RF magnetron sputtering a SnS

target. The effects of the preparation conditions on the properties of the films were studied. The crystal and phase structure of the thin films were investigated by X-ray diffraction and laser Raman spectroscopy. The chemical composition

optical properties of the SnS

thin films were characterized by energy disperse X-ray spectroscopy

ultraviolet-visible-near infrared spectrophotometry (UV-Vis-NIR). The atomic ratio

optical constants and bandgap of SnS

thin film were calculated and analyzed. The results show that the optimal condition for SnS

thin films is the sputtering power of 60 W and argon pressure of 0.5 Pa. The film is aligned along (001) preferred orientation

the transmittance and refractive index are high in the visible region

the extinction coefficient is small

and the direct bandgap is 2.81 eV. The n-SnS

/p-Si heterojuction devices were fabricated. The devices exhibit good rectifying behaviors and weak photovoltaic properties. The photocurrent under the reverse bias voltage is increased with the increasing of illumination intensity. The photoconducting mechanism of the devices is controlled by the presence of exponential distribution of trap centers in the forbidden band of SnS

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Related Author

LIU Dan-dan

LI Xue-liu

LI Lin

SHI Cheng-wu

LIANG Qi

GUO Heng

SHI Linlin

SHEN Tao

Related Institution

合肥工业大学电子科学与应用物理学院, 安徽合肥 230009

合肥工业大学化学与化工学院, 安徽合肥 230009

The Center for Industrial Technology Innovation and Development of Bijie

State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering， Institute of Optics and Electronics， Chinese Academy of Sciences

College of Physics and Optoelectronic Engineering， Taiyuan University of Technology

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