Photoetching of Tapered Diode Laser Wafer

LI Jing; QIU Yun-tao; CAO Yin-hua; WANG Qing; YAO Shun; XU Shang-rui; QIN Wen-bin; LIU You-

doi:10.3788/fgxb20163712.1502

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Photoetching of Tapered Diode Laser Wafer

更新时间：2020-08-12

- Photoetching of Tapered Diode Laser Wafer
- Chinese Journal of Luminescence Vol. 37, Issue 12, Pages: 1502-1506(2016)
- 作者机构：
  
  北京工业大学激光工程研究院北京,100124
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163712.1502
  CLC： TN24;TN31
- Received：03 June 2016，
  
  Revised：28 July 2016，
  
  Published：10 December 2016
- 稿件说明：
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李景, 邱运涛, 曹银花等. 锥形半导体激光芯片的光刻工艺研究[J]. 发光学报, 2016,37(12): 1502-1506

LI Jing, QIU Yun-tao, CAO Yin-hua etc. Photoetching of Tapered Diode Laser Wafer[J]. Chinese Journal of Luminescence, 2016,37(12): 1502-1506
李景, 邱运涛, 曹银花等. 锥形半导体激光芯片的光刻工艺研究[J]. 发光学报, 2016,37(12): 1502-1506 DOI： 10.3788/fgxb20163712.1502.

LI Jing, QIU Yun-tao, CAO Yin-hua etc. Photoetching of Tapered Diode Laser Wafer[J]. Chinese Journal of Luminescence, 2016,37(12): 1502-1506 DOI： 10.3788/fgxb20163712.1502.

摘要

针对锥形半导体激光器中的脊形波导区宽度较小的问题，对半导体激光芯片制造中的刻蚀标记及刻蚀方法进行了研究。提出对于锥形半导体刻蚀中的脊型区域和锥形区域，采用不同精度的双标记刻蚀方法，细化对脊形波导和锥形波导的刻蚀中的对准问题，并使光刻标在不同的光刻版上相错位排列，在相应光刻版中相互遮挡，反复刻蚀中保证相应的光刻标清晰、完整。刻蚀后的芯片在电流为7 A时获得了中心波长963 nm、连续功率4.026 W、慢轴方向和快轴方向激光光束参数乘积分别为1.593 mmmrad和0.668 mmmrad的激光输出。

Abstract

For the very narrow ridge waveguide width

the etching marks and etching methods in the manufacturing of the semiconductor tapered laser chip were studied in this paper. The double photolithography alignment mark using two different precisions for the ridge area and the tapered area was proposed to refine the alignment in the etching of ridge waveguide and tapered waveguide. The photolithography alignment marks were arranged in different place in different photolithography figure

and they interacted each other in order to keep the photolithography alignment marks clear and complete in repeated etching. By using this method

the etched chip delivers 4.026 W CW output at 7 A current with the center wavelength of 963 nm

and the slow and fast direction beam quality is 1.593 mmmrad and 0.668 mmmrad

respectively.

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references

王立军,彭航宇,张俊. 大功率半导体激光合束进展[J]. 中国光学, 2015, 8(4):517-534. WANG L J, PENG H Y, ZHANG J. Advance on high power diode laser coupling[J]. Chin. Opt., 2015, 8(4):517-534. (in Chinese)

WALPOLE J N. Semiconductor amplifiers and lasers with tapered gain regions[J]. Opt. Quant. Electron., 1996, 28(6):623-645.

SUJECKI S, BORRUEL L, WYKES J, et al.. Nonlinear properties of tapered laser cavities[J]. IEEE J. Sel. Top. Quant. Electron., 2003, 9(3):823-834.

BORRUEL L, SUJECKI S, MORENO P, et al.. Quasi-3-D simulation of high-brightness tapered lasers[J]. IEEE J. Quant. Electron., 2004, 40(5):463-472.

PASCHKE K, SWNPF B, DITTMAR F, et al.. 5.3 W CW high brightness 980-nm tapered diode lasers[C]. Proceedings of Conference on Lasers and Electro-Optics Europe, Munich, Germany, 2005:12489.

SUMPF B, BEISTER G, ERBERT G, et al.. Reliable 1-W CW operation of high-brightness tapered diode lasers at 735 nm[J]. IEEE Photon. Technol. Lett., 2004, 16(4):984-986.

KALLENBACH S, KELEMEN M T, AIDAM R, et al.. High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm[J]. SPIE, 2005, 5738:406-415.

魏星. 近衍射极限高功率锥形半导体激光器[D]. 长春:长春理工大学, 2007. WEI X. Near Diffraction Limited High Power Tapered Semiconductor Lasers[D]. Changchun:Changchun University of Science and Technology, 2007. (in Chinese)

李璟,刘媛媛,马骁宇. 电极分离的980 nm锥形激光器的研制[J]. 半导体学报, 2007, 28(8):1302-1306. LI J, LIU Y Y, MA X Y. high-brightness taper diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J]. Chin. J. Semicond., 2007, 28(8):1302-1306. (in Chinese)

OSTENDORF R, KAUFEL G, MORITZ R, et al.. 10 W high-efficiency high-brightness tapered diode lasers at 976 nm[J]. SPIE, 2008, 6876:68760H.

GKDEN B, MANSURIPUR T S, BLANCHARD R, et al.. High-brightness tapered quantum cascade lasers[J]. Appl. Phys. Lett., 2013, 102(5):053503-1-4.

蒲涛飞,张晶. 高功率高光束质量锥形半导体激光器[J]. 长春理工大学学报(自然科学报), 2015, 38(2):9-12. PU T F, ZHANG J. High-power beam quality tapered semiconductor laser[J]. J. Changchun Univ. Sci. Technol. (Nat. Sci. Edit.), 2015, 38(2):9-12. (in Chinese)

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