Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD

LI Wang; TANG Lu; DU Jiang-ping; XUE Fei; XIN Zeng-nian; LUO Zhe; LIU Shi-yong

doi:10.3788/fgxb20163712.1496

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Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD

更新时间：2020-08-12

- Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD
- Chinese Journal of Luminescence Vol. 37, Issue 12, Pages: 1496-1501(2016)
- 作者机构：
  
  1. 浙江正泰太阳能科技有限公司,浙江杭州,310053
  2. 江西科技学院协同创新中心, 江西南昌 330098
  3. 江西科技学院管理学院, 江西南昌 330098
- 作者简介：
- 基金信息：
  
  Supported by "
- DOI：10.3788/fgxb20163712.1496
  CLC： O484.4;TN304
- Received：17 June 2016，
  
  Revised：21 July 2016，
  
  Published：10 December 2016
- 稿件说明：
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李旺, 唐鹿, 杜江萍等. 氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响[J]. 发光学报, 2016,37(12): 1496-1501

LI Wang, TANG Lu, DU Jiang-ping etc. Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD[J]. Chinese Journal of Luminescence, 2016,37(12): 1496-1501
李旺, 唐鹿, 杜江萍等. 氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响[J]. 发光学报, 2016,37(12): 1496-1501 DOI： 10.3788/fgxb20163712.1496.

LI Wang, TANG Lu, DU Jiang-ping etc. Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD[J]. Chinese Journal of Luminescence, 2016,37(12): 1496-1501 DOI： 10.3788/fgxb20163712.1496.

摘要

采用低压化学气相沉积（LPCVD）在玻璃衬底上制备了B掺杂ZnO（BZO）薄膜，研究了氢气气氛退火对BZO薄膜光学性能和电学性能的影响。结果表明：在氢气气氛下退火后，BZO薄膜的物相结构和透光率基本无变化，但BZO薄膜的导电能力却明显提高。Hall测试结果表明：在氢气下退火时载流子浓度基本保持不变，但迁移率却明显提高。实验结果可为进一步提高BZO薄膜的光学电学综合性能提供借鉴。

Abstract

B doped ZnO (BZO) films were prepared on glass substrate by LPCVD method. The effect of hydrogen atmosphere annealing on the optical and electrical properties of BZO thin films was studied. The results show that the phase structure and the transmittance of the BZO films have no change after annealing in the hydrogen atmosphere

but the electrical conductivity of the BZO films is obviously improved. The Hall test results reveal that the carrier concentration is almost the same after hydrogen annealing

but the mobility is dramatically increased. The results in this paper should provide a reference for further improving the optical and electrical properties of BZO thin films.

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references

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