Photoluminescence of SiO2 Thin Films Doped by Tb3+

LIU Jin-jin; XU Ming-xiang

doi:10.3788/fgxb20163712.1464

您当前的位置：

首页 >

文章列表页 >

Photoluminescence of SiO₂ Thin Films Doped by Tb³⁺

更新时间：2020-08-12

- Photoluminescence of SiO₂ Thin Films Doped by Tb³⁺
- Chinese Journal of Luminescence Vol. 37, Issue 12, Pages: 1464-1470(2016)
- 作者机构：
  
  东南大学物理系, 江苏南京 211189
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163712.1464
  CLC： O473;O482.31
- Received：24 July 2016，
  
  Revised：21 August 2016，
  
  Published：10 December 2016
- 稿件说明：
移动端阅览
刘金金, 徐明祥,. 氧化硅薄膜中掺杂Tb3+离子的发光敏化[J]. 发光学报, 2016,37(12): 1464-1470

LIU Jin-jin, XU Ming-xiang,. Photoluminescence of SiO2 Thin Films Doped by Tb3+[J]. Chinese Journal of Luminescence, 2016,37(12): 1464-1470
刘金金, 徐明祥,. 氧化硅薄膜中掺杂Tb3+离子的发光敏化[J]. 发光学报, 2016,37(12): 1464-1470 DOI： 10.3788/fgxb20163712.1464.

LIU Jin-jin, XU Ming-xiang,. Photoluminescence of SiO2 Thin Films Doped by Tb3+[J]. Chinese Journal of Luminescence, 2016,37(12): 1464-1470 DOI： 10.3788/fgxb20163712.1464.

摘要

采用溶胶-凝胶法在硅片上制备了掺杂稀土离子Tb

的SiO

薄膜，并用荧光分析方法研究了薄膜的发光特性，对发光效果的提升途径做了探索和分析。在245 nm波长的激发下，能够观察到Tb

的

（

=6，5，4，3）的跃迁发射峰。对于Tb

离子的高浓度掺杂体系，在掺入富Si或Al

离子后，浓度猝灭效应能得到明显改善。同时掺入两种激活剂的样品发光强度较只掺Al

的样品大了近一倍。此外，氩气氛退火引入氧空位缺陷也能使样品的发光强度有较大提升，氩气氛退火的最佳温度为1 200℃。

Abstract

SiO

:Tb

films were prepared on silicon chips by sol-gel method. The photoluminescence characterizations of the films were studied by fluorescence analysis

and the ways to improve the luminescence were explored and analyzed. Excited by 245 nm

the peaks of transition emissions of

(

3) of Tb

can be observed. The concentration quenching effect of the system with high concentration doping of Tb

ions

can be significantly improved after the co-doping of Si or Al

. The luminescence intensity of the sample doped by Si and Al

is twice as that of Al

-doped sample. In addition

the oxygen vacancy defect introduced by annealing under Ar atmosphere can make the system get significantly enhanced emissions

and the best annealing temperature is 1 200℃.

关键词

Keywords

references

王兴军,周治平. 硅基光电集成用铒硅酸盐化合物光源材料和器件的研究进展[J]. 中国光学, 2014, 7(2):274-280. WANG X J, ZHOU Z P. Research progress of Er silicate compound light source materials and devices for silicon photonics application[J]. Chin. Opt., 2014, 7(2):274-280. (in Chinese)

沈浩,李东升,杨德仁. 硅基光源的研究进展[J]. 物理学报, 2015, 64(20):204208-1-18. SHEN H, LI D S, YANG D R. Research progress of silicon light source[J]. Acta Phys. Sinica, 2015, 64(20):204208-1-18. (in Chinese)

王蓟,宁永强,任大翠,等. 硅基发光材料研究进展[J]. 微纳电子技术, 2002, 39(8):18-21. WANG J, NING Y Q, REN D C, et al.. Research development of Si-based light emitting material[J]. Micronanoelectron. Technol., 2002, 39(8):18-21. (in Chinese)

QIN G G, JIA J Q. Mechanism of the visible luminescence in porous silicon[J]. Solid State Commun., 1993, 86(9):559-563.

曾刚,杨宏春,阮成礼,等. 硅基发光材料研究进展[J]. 压电与声光, 2004, 26(4):296-300. ZENG G, YANG H C, RUAN C L, et al.. The present research and development of Si-based light-emitting materials[J]. Piezoelect. Acoustoopt., 2004, 26(4):296-300. (in Chinese)

杨遇春,汪丽都,钱九红. 稀土在中国高新材料研制开发中的应用[J]. 中国稀土学报, 1996, 14(1):72-78. YANG Y C, WANG L D, QIAN J H. Research and development of rare earth advanced materials in China[J]. J. Chin. Rare Earth Soc., 1996, 14(1):72-78. (in Chinese)

谢国亚,张友. 稀土发光材料的发光机理及其应用[J]. 压电与声光, 2012, 34(1):110-113. XIE G Y, ZHANG Y. The principle of rare-earth luminescent material and the applications[J]. Piezoelect. Acoustoopt., 2012, 34(1):110-113. (in Chinese)

洪广言. 稀土发光材料的研究进展[J]. 人工晶体学报, 2015, 44(10):2641-2651. HONG G Y. Research progress of rare earth luminescent materials[J]. J. Synth. Cryst., 2015, 44(10):2641-2651. (in Chinese)

徐嘉林,金维召,刘旺,等. Ho,Yb:Tb3Ga5O12纳米粉体制备及发光性能研究[J]. 中国光学, 2015, 8(4):608-614. XU J L, JIN W Z, LIU W, et al.. Preparation and luminescent properties of Ho,Yb:Tb3Ga5O12 nano-powder[J]. Chin. Opt., 2015, 8(4):608-614. (in Chinese)

万钧,叶令,王迅. Si中掺Er的原子构型与电子特性[J]. 物理学报, 1998, 47(4):652-657. WAN J, YE L, WANG X. Atomic configuration and electronic structure of erbium-doped silicon[J]. Acta Phys. Sinica, 1998, 47(4):652-657. (in Chinese)

COFFA S, PRIOLO F, FRANZO' G, et al.. Optical activation and excitation mechanisms of Er implanted in Si[J]. Phys. Rev. B, 1993, 48(16):11782-11788.

李延辉,刘技文,赵燕平,等. 基于发光机理提高掺铒硅基材料发光效率的几条途径[J]. 物理, 2005, 34(4):293-299. LI Y H, LIU J W, ZHAO Y P, et al.. Several routes towards high luminescence efficiency of Er-doped Si-based materials based on the luminescence mechanism[J]. Physics, 2005, 34(4):293-299. (in Chinese)

MICHEL J, BENTON J L, FERRANTE R F, et al.. Impurity enhancement of the 1.54-m Er3+ luminescence in silicon[J]. J. Appl. Phys., 1991, 70(5):2672-2678.

付作岭,董晓睿,盛天琦,等. 纳米晶体中稀土离子的发光性质及其变化机理研究[J]. 中国光学, 2015, 8(1):139-144. FU Z L, DONG X R, SHENG T Q, et al.. Luminescene properties and various mechanisms of rare earth ions in the nanocrystals[J]. Chin. Opt., 2015, 8(1):139-144. (in Chinese)

陈维德,陈长勇,卞留芳. 掺铒纳米晶硅和掺铒非晶纳米硅薄膜的发光性质[J]. 发光学报, 2005, 26(5):647-650. CHEN W D, CHEN C Y, BIAN L F. Room-temperature luminescence from Er-doped SiOx films containing Si nanoparticles[J]. Chin. J. Lumin., 2005, 26(5):647-650. (in Chinese)

王永谦,陈长勇,陈维德,等. a-Si:O:H薄膜微结构及其高温退火行为研究[J]. 物理学报, 2001, 50(12):2418-2422. WANG Y Q, CHEN C Y, CHEN W D, et al.. The microstructure and its high-temperature annealing behaviours of a-Si:O:H film[J]. Acta Phys. Sinica, 2001, 50(12):2418-2422. (in Chinese)

谢大弢,吴瑾光,马刚,等. 用溶胶-凝胶方法制备Tb3+掺杂的硅基发光材料[J]. 物理学报, 1999, 48(9):1773-1780. XIE D T, WU J G, MA G, et al.. Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method[J]. Acta Phys. Sinica, 1999, 48(9):1773-1780. (in Chinese)

王喜贵,吴红英,谢大弢,等. 铝对掺铽硅基玻璃发光强度的影响[J]. 光谱学与光谱分析, 2000, 20(6):803-806. WANG X G, WU H Y, XIE D T, et al.. Effect of Al3+ on luminescence intensity of Tb in silica glasses[J]. Spectrosc. Spect. Anal., 2000, 20(6):803-806. (in Chinese)

NOGAMI M, ABE Y. Enhanced emission from Eu2+ ions in sol-gel derived Al2O3-SiO2 glasses[J]. Appl. Phys. Lett., 1996, 69(25):3776-3778.

王倩,张为欢,欧阳绍业,等. Dy3+-Tb3+掺杂氟氧碲酸盐玻璃的光谱性能研究[J]. 光子学报, 2015, 44(1):0116004-1-6. WANG Q, ZHANG W H, OUYANG S Y, et al.. Luminescence properties of oxyfluoride tellurite glasses doped with Dy3+ ions and Tb3+ ions[J]. Acta Photon. Sinica, 2015, 44(1):0116004-1-6. (in Chinese)

姜代武,宋博,杨旭,等. Tb3+掺杂硅酸盐闪烁玻璃发光特性[J]. 发光学报, 2009, 30(3):363-367. JIANG D W, SONG B, YANG X, et al.. Luminescent property of Tb3+ doped silicate scintillating glass[J]. Chin. J. Lumin., 2009, 30(3):363-367. (in Chinese)

李亮,雷小华,任林娇,等. 基质对Tb3+单掺荧光玻璃发光性质的影响[J]. 发光学报, 2014, 35(4):420-424. LI L, LEI X H, REN L J, et al.. Effect of glass matrix on luminescent properties of Tb3+ doped luminescence glass[J]. Chin. J. Lumin., 2014, 35(4):420-424. (in Chinese)

刘金金. 溶胶-凝胶法制备稀土离子掺杂SiO2薄膜的发光研究[D]. 北京:北京师范大学, 2010. LIU J J. Photoluminescence Study of Rare-earth Doped SiO2 Thin Films Prepared by Sol-gel Method[D]. Beijing:Beijing Normal University, 2010. (in Chinese)

王喜贵,吴红英,谢大弢,等. 掺Tb3+硅基材料的发光性质[J]. 稀土, 2001, 22(2):67-69. WANG X G, WU H Y, XIE D T, et al.. Luminescence properties of Tb3+ in silica material[J]. Chin. Rare Earths, 2001, 22(2):67-69. (in Chinese)

吴雪艳,尤洪鹏,曾小青,等. 共沉淀法合成稀土正磷酸盐(La, Gd)PO4:RE3+(RE=Eu, Tb)及其真空紫外光谱特性[J]. 高等学校化学学报, 2003, 24(1):1-4. WU X Y, YOU H P, ZENG X Q, et al.. The preparation of (La, Gd)PO4:RE3+ (RE=Eu, Tb) by co-precipitation method and their VUV spectroscopic properties[J]. Chem. J. Chin. Univ., 2003, 24(1):1-4. (in Chinese)

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Luminescent Properties of Rare Earth Ions Doped LaAlO₃:RE³⁺ (RE=Eu, Tb, Sm, Tm) Phosphors

Luminescent Properties of CaY_1-xAlO₄: xRE³⁺ (RE=Dy, Ho, Sm, Tm) Phosphors

Luminescent Properties of CaYAlO₄:Mn⁴⁺ Red Phosphors Prepared by Sol-gel Method

Zn_1-xFe_xO Diluted Magnetic Semiconductor Fabricated with Sol-gel Method

Synthesis and Luminescent Properties of Y₃Al₅O₁₂：Eu³⁺ Phosphor

Related Author

LIANG Li-fang

ZHANG Li-xia

MENG Li-li

WANG Xiao-jun

CHEN Cai-hua

LIANG Li-fang

ZHANG Li-xia

MENG Li-li

Related Institution

College of Chemistry and Materials Science, Guangxi Teachers Education University

Guangdong Huaiji Middle School, Huaiji

College of Chemistry and Materials Science, Guangxi Teachers Education University

Institute of Optoelectronic Technology, Beijing Jiaotong University

College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, China

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰