Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well

WANG Hai-long; LI Zheng; HU Min; LI Shi-ling; GONG Qian

doi:10.3788/fgxb20163711.1408

您当前的位置：

首页 >

文章列表页 >

Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well

更新时间：2020-08-12

- Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well
- Chinese Journal of Luminescence Vol. 37, Issue 11, Pages: 1408-1414(2016)
- 作者机构：
  
  1. 山东省激光偏光与信息技术重点实验室, 曲阜师范大学物理工程学院, 山东曲阜 273165
  2. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室, 上海 200050
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163711.1408
  CLC： O471.1
- Received：06 July 2016，
  
  Revised：17 August 2016，
  
  Published：05 November 2016
- 稿件说明：
移动端阅览
王海龙, 李正, 胡敏等. GaInAsP/InP阶梯量子阱中电子-电子的散射率[J]. 发光学报, 2016,37(11): 1408-1414

WANG Hai-long, LI Zheng, HU Min etc. Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well[J]. Chinese Journal of Luminescence, 2016,37(11): 1408-1414
王海龙, 李正, 胡敏等. GaInAsP/InP阶梯量子阱中电子-电子的散射率[J]. 发光学报, 2016,37(11): 1408-1414 DOI： 10.3788/fgxb20163711.1408.

WANG Hai-long, LI Zheng, HU Min etc. Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well[J]. Chinese Journal of Luminescence, 2016,37(11): 1408-1414 DOI： 10.3788/fgxb20163711.1408.

摘要

在有效质量近似下，利用打靶法和费米黄金定则计算出Ga

/InP阶梯量子阱中两个及多个电子从第一激发态子带到基态子带的散射率及平均散射率。计算结果表明，电子-电子的散射率和平均散射率随Ga组分和阱宽的增大而升高，随As组分的增大而降低。散射率随电子初态能和外加电场强度的增大而降低，平均散射率随载流子浓度的增大而升高。电子温度对平均散射率的影响不明显，平均散射率随着电子温度的升高而稍微降低。

Abstract

Within the framework of effective mass approximation

the scattering rate and the mean scattering rate for two electrons and multiple electrons initially in the first excited subband and finally in the ground subband in Ga

/InP stepped quantum well were calculated adopting the shooting method and Fermi's golden rule. The results show that the electron-electron scattering rate and the mean scattering rate increase with the increasing of Ga composition and well width

decrease with the increasing of As composition. The scattering rate decreases with the increasing of initial electron energy and intensity of applied electric field. The mean scattering rate increases with the increasing of carrier density. The electron temperature does not have great influence on the mean scattering rate

the mean scattering rate decreases slightly as the electron temperature rises. The calculated results can provide theory basis and guiding significance for the design of optoelectronic devices based on stepped quantum well and GaInAsP/InP material.

关键词

Keywords

references

LUDEWIG P, KNAUB N, HOSSAIN N, et al.. Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser [J]. Appl. Phys. Lett., 2013, 102(24):242115.

GREADY D, EISENSTEIN G, IVANOV V, et al.. High speed 1.55 m InAs/InGaAlAs/InP quantum dot lasers [J]. IEEE Photon. Technol. Lett., 2014, 26(1):11-13.

CHEN P, GONG Q, CAO C F, et al.. High performance external cavity InAs/InP quantum dot lasers [J]. Appl. Phys. Lett., 2011, 98(12):121102.

MARCINKEVIC?IUS S, KELCHNER K M, NAKAMURA S, et al.. Optical properties of extended and localized states in m-plane InGaN quantum wells [J]. Appl. Phys. Lett., 2013, 102(10):101102.

SOTHMANN B, SNCHEZ R, JORDAN A, et al.. Powerful energy harvester based on resonant-tunneling quantum wells [J]. New J. Phys., 2013, 15:095021.

JIANG L M, WANG H L, WU H T, et al.. Electronic states of a shallow hydrogenic donor impurity in different shaped semiconductor quantum wells [J]. Commun. Theor. Phys., 2009, 51(6):1135-1138.

YANG C C. High performance multiple stepped quantum well resonant microwave devices [J]. Electron. Lett., 2006, 42(25):1485-1487.

ZHAO H P, TANSU N. Optical gain characteristics of staggered InGaN quantum wells lasers [J]. J. Appl. Phys., 2010, 107(11):113110.

WEN Y, WANG Y P, WATANABE K, et al.. Effect of GaAs step layer on InGaAs/GaAsP quantum well solar cells [J]. Appl. Phys. Express, 2011, 4(12):122301.

WEN Y, WANG Y P, WATANABE K, et al.. Effect of GaAs step layer thickness in InGaAs/GaAsP stepped quantum-well solar cell [J]. IEEE J. Photovolt., 2013, 3(1):289-294.

KHAN M A, PAVEL A A, ISLAM N. Intersubband transition in asymmetric quantum well Infrared photodetector [J]. IEEE T. Nanotechnol., 2013, 12(4):521-523.

ARAI S, NISHIYAMA N, MARUYAMA T, et al.. GaInAsP/InP membrane lasers for optical interconnects [J]. IEEE J. Sel. Top. Quant. Electron., 2011, 17:1381-1387.

OKUMURA T, KOGUCHI T, ITO H, et al.. Injection-type GaInAsP/InP membrane buried heterostructure distributed feedback laser [J]. Appl. Phys. Lett., 2011, 4(4):042101.

王文娟,王海龙,龚谦,等.外电场对InGaAsP/InP量子阱内激子结合能的影响 [J]. 物理学报, 2013, 62(23):237104. WANG W J, WANG H L, GONG Q, et al.. External electric field effect on exciton binding energy in InGaAsP/InP quantum wells [J]. Acta Phys. Sinica, 2013, 62(23):237104. (in Chinese)

THVRMER S, SEIDEL R, FAUBEL M, et al.. Photoelectron angular distributions from liquid water: effects of electron scattering [J]. Phys. Rev. Lett., 2013, 111(17):173005.

YAO J M, BENDER M, HEENEN P H. Beyond-mean-field study of elastic and inelastic electron scattering off nuclei [J].Phys. Rev. C, 2015, 91(2):024301.

ADAGIDELⅡ I, WIMMER M, TEKER A. Effects of electron scattering on the topological properties of nanowires: majorana fermions from disorder and superlattices [J].Phys. Rev. B, 2014, 89 (14):144506.

OVADYAHU Z. Suppression of inelastic electron-electron scattering in anderson insulators [J]. Phys. Rev. Lett., 2012, 108(15):156602.

陈茜,王海龙,汪辉,等.GaxIn1-xAsyP1-y/GaAs量子阱中电子-LO声子的散射率 [J]. 物理学报, 2013, 62(20):226301. CHEN Q, WANG H L, WANG H, et al.. Electron-LO phonon scattering in GaxIn1-xAsyP1-y/GaAs quantum well [J]. Acta Phys. Sinica, 2013, 62(20):226301. (in Chinese)

HERBERT LI E. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures [J]. Physica E, 2000, 5:215-273.

Views

190

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

ch^-2x Potential and Classical Describtion of Planar Channelling Radiation for Relativistic Electron

Related Author

TAN Yong-ming

SHAO Ming-zhu

LUO Shi-yu

DENG Li-hu

Related Institution

Dongguan University of Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰