Properties of AZO/Al2O3 Stacked Thin Film Transistors Prepared at Room Temperature

NING Hong-long; ZENG Yong; YAO Ri-hui; LIU Xian-zhe; TAO Rui-qiang; ZHENG Ze-ke; FANG Zhi-

doi:10.3788/fgxb20163711.1372

您当前的位置：

首页 >

文章列表页 >

Properties of AZO/Al₂O₃ Stacked Thin Film Transistors Prepared at Room Temperature

更新时间：2020-08-12

- Properties of AZO/Al₂O₃ Stacked Thin Film Transistors Prepared at Room Temperature
- Chinese Journal of Luminescence Vol. 37, Issue 11, Pages: 1372-1377(2016)
- 作者机构：
  
  1. 华南理工大学材料科学与工程学院, 高分子光电材料与器件研究所, 发光材料与器件国家重点实验室, 广东广州 510640
  2. 新型陶瓷与精细工艺国家重点实验室(清华大学), 北京 100084
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163711.1372
  CLC： TN321+.5
- Received：26 May 2016，
  
  Revised：29 August 2016，
  
  Published：05 November 2016
- 稿件说明：
移动端阅览
宁洪龙, 曾勇, 姚日晖等. 室温生长AZO/Al2O3叠层薄膜晶体管性能研究[J]. 发光学报, 2016,37(11): 1372-1377

NING Hong-long, ZENG Yong, YAO Ri-hui etc. Properties of AZO/Al2O3 Stacked Thin Film Transistors Prepared at Room Temperature[J]. Chinese Journal of Luminescence, 2016,37(11): 1372-1377
宁洪龙, 曾勇, 姚日晖等. 室温生长AZO/Al2O3叠层薄膜晶体管性能研究[J]. 发光学报, 2016,37(11): 1372-1377 DOI： 10.3788/fgxb20163711.1372.

NING Hong-long, ZENG Yong, YAO Ri-hui etc. Properties of AZO/Al2O3 Stacked Thin Film Transistors Prepared at Room Temperature[J]. Chinese Journal of Luminescence, 2016,37(11): 1372-1377 DOI： 10.3788/fgxb20163711.1372.

摘要

针对目前大多数氧化物薄膜晶体管都需要采用热退火工艺来提高其性能不利于其在柔性显示器件中应用这一问题，提出了一种采用室温工艺制备的新型TFT器件，无需退火处理即可获得较好的器件性能。该器件采用脉冲激光沉积技术制备的AZO/Al

叠层结构作为沟道层。与单层AZO-TFT器件相比，叠层TFT器件具有更优异的性能，其迁移率为2.27cm

-1

，开关比为1.4310

。通过对AZO/Al

叠层薄膜的厚度、密度、粗糙度、物相、界面特性及能带结构等进行分析，发现这种叠层结构能够使电子的运动被限制在AZO薄膜平面内，即形成了二维电子传输，从而提升TFT器件的性能。

Abstract

Most of the oxide thin film transistor (TFT) need thermal annealing process to improve its performance

which is detrimental to their applications in the flexible display devices. Concerning this problem

a new TFT structure with room temperature process was presented

which has good performance without annealing treatment. AZO/Al

stacked thin film was prepared by pulsed laser deposition as a channel layer. The stacked TFT showed better performance than single-layer AZO-TFT. The field effect mobility and on/off current ratio were 2.27 cm

-1

and 1.4310

. By analyzing the thickness

density

roughness

phase and band structure of AZO/Al

stacked thin film

it is found that the electrons can be confined in the potential well of AZO

which forms a two-dimensional electron transport to improve the performance of TFT device.

关键词

Keywords

references

LIANG C, CHAU J L H, YANG C, et al.. Preparation of amorphous Ga-Sn-Zn-O semiconductor thin films by RF-sputtering method [J]. Mater. Sci. Eng.: B, 2014, 183:17-23.

苟昌华,武明珠,郭永林,等. 未退火InGaZnO作为缓冲层的InGaZnO薄膜晶体管性能研究 [J]. 液晶与显示, 2015, 30(4):602-607. GOU C H, WU M Z, GUO Y L, et al.. Effects of using InGaZnO without annealing as buffer layer on the performance of InGaZnO thin film transistors [J]. Chin. J. Liq. Cryst. Disp., 2015, 30(4):602-607. (in Chinese)

KANG M, KIM S J, KIM H J. Fabrication of high performance thin-film transistors via pressure-induced nucleation [J]. Sci. Rep., 2014, 4:6858.

HENNEK J W, SMITH J, YAN A, et al.. Oxygen "Getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X=Ga, Sc, Y, La) transistors [J]. J. Am. Chem. Soc., 2013, 135(29):10729-10741.

HUANG G, DUAN L, DONG G, et al.. High-mobility solution-processed tin oxide thin-film transistors with high- alumina dielectric working in enhancement mode [J]. ACS Appl. Mater. Interf., 2014, 6(23):20786-20794.

ZOU X, WANG J, CHIU C, et al.. Interface engineering for high-performance top-gated MoS2 field-effect transistors [J]. Adv. Mater., 2014(26):6255-6261.

LIU H, LAI Y, LAI C, et al.. Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays [J]. ACS Appl. Mater. Interf., 2015, 7(1):232-240.

LIAU L C, LIN Y. Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique [J]. Solid-State Electronics, 2015, 103:54-58.

NAYAK P K, WANG Z, ANJUM D H, et al.. Highly stable thin film transistors using multilayer channel structure [J]. Appl. Phys. Lett., 2015, 106(10):103505.

AHN C H, KIM S H, KIM Y K, et al.. Effect of post-annealing temperatures on thin-film transistors with ZnO/Al2O3 superlattice channels [J]. Thin Solid Films, 2015, 584:336-340.

LEE S, HWANG C, PI J, et al.. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties [J]. Appl. Phys. Lett., 2014, 105(20):201601.

AHN C H, SENTHIL K, CHO H K, et al.. Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors [J]. Sci. Rep., 2013, 3:2737.

GRANOZIO F M, KOSTER G, RIJNDERS G. Functional oxide interfaces [J]. MRS Bulletin, 2013, 38(12):1017-1023.

ROGERS J A, SOMEYA T, HUANG Y. Materials and mechanics for stretchable electronics [J]. Science, 2010, 327(5973):1603-1607.

HWANG H Y, IWASA Y, KAWASAKI M, et al.. Emergent phenomena at oxide interfaces [J]. Nat. Mater., 2012, 11(2):103-113.

CHEN Y Z, BOVET N, TRIER F, et al.. A high-mobility two-dimensional electron gas at the spinel/perovskite interface of -Al2O3/SrTiO3 [J]. Nat. Commun., 2013, 4:1371.

ATAIDE S F, SCHMITZ N, SHEN K, et al.. The crystal structure of the signal recognition particle in complex with its receptor [J]. Science, 2011, 331(6019):881-886.

AJIMSHA R S, DAS A K, JOSHI M P, et al.. Band alignment studies of Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures grown by pulsed laser deposition [J]. Appl. Surf. Sci., 2014, 317:994-999.

LEE S, GHAFFARZADEH K, NATHAN A, et al.. Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors [J]. Appl. Phys. Lett., 2011, 98(20):203508.

KAMIYA T, NOMURA K, HOSONO H. Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors [J]. Appl. Phys. Lett., 2010, 96(12):122103.

AIKAWA S, MITOMA N, KIZU T, et al.. Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors [J]. Appl. Phys. Lett., 2015, 106(19):192103.

CHEN W, LO S, KAO S, et al.. Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors [J]. IEEE Electron Dev. Lett., 2011, 32(11):1552-1554.

JEONG J K, WON YANG H, JEONG J H, et al.. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J]. Appl. Phys. Lett., 2008, 93(12):123508.

KIM D, YOON S, JEONG Y, et al.. Role of adsorbed H2O on transfer characteristics of solution-processed zinc tin oxide thin-film transistors [J]. Appl. Phys. Express, 2012, 5(2):21101.

Views

149

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰