Growth Dynamics and Carrier Control of The Third Generation Semiconductor with Large Mismatch and Strong Polarization

WANG Xin-qiang; LI Da-bing; LIU Bin; SUN Qian; ZHANG Jin-cheng

doi:10.3788/fgxb20163711.1305

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Growth Dynamics and Carrier Control of The Third Generation Semiconductor with Large Mismatch and Strong Polarization

更新时间：2020-08-12

- Growth Dynamics and Carrier Control of The Third Generation Semiconductor with Large Mismatch and Strong Polarization
- Chinese Journal of Luminescence Vol. 37, Issue 11, Pages: 1305-1309(2016)
- 作者机构：
  
  1. 北京大学物理学院人工微结构和介观物理国家重点实验室北京,100871
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  3. 中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州,215123
  4. 南京大学电子科学与工程学院江苏省光电信息功能材料重点实验室,江苏南京,210093
  5. 西安电子科技大学微电子学院宽带隙半导体技术国防重点学科实验室,陕西西安,710071
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163711.1305
  CLC： O469;O552.6
- Received：05 September 2016，
  
  Revised：27 September 2016，
  
  Published：05 November 2016
- 稿件说明：
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王新强, 黎大兵, 刘斌等. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律[J]. 发光学报, 2016,37(11): 1305-1309

WANG Xin-qiang, LI Da-bing, LIU Bin etc. Growth Dynamics and Carrier Control of The Third Generation Semiconductor with Large Mismatch and Strong Polarization[J]. Chinese Journal of Luminescence, 2016,37(11): 1305-1309
王新强, 黎大兵, 刘斌等. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律[J]. 发光学报, 2016,37(11): 1305-1309 DOI： 10.3788/fgxb20163711.1305.

WANG Xin-qiang, LI Da-bing, LIU Bin etc. Growth Dynamics and Carrier Control of The Third Generation Semiconductor with Large Mismatch and Strong Polarization[J]. Chinese Journal of Luminescence, 2016,37(11): 1305-1309 DOI： 10.3788/fgxb20163711.1305.

摘要

高质量氮化镓（GaN）材料是发展第三代半导体光电子与微电子器件的根基。大失配、强极化和非平衡态生长是GaN基材料及其量子结构的固有特点，对其生长动力学和载流子调控规律的研究具有重要的科学意义与实用价值，受到各国科学界与产业界广泛高度重视。本文对大失配、强极化氮化物半导体材料体系外延生长动力学和载流子调控规律进行了研究，旨在攻克蓝光发光效率限制瓶颈，突破高Al和高In氮化物材料制备难题，实现高发光效率量子阱和高迁移率异质结构，制备多波段、高效率发光器件和高频率、高耐压电子器件，实现颠覆性的技术创新和应用，带动电子材料产业转型升级。

Abstract

High quality GaN-based material system is the basis of developing the third generation semiconductor optoelectronic and microelectronic devices. The GaN-based materials and quantum structures have the properties of large mismatch

strong polarization

and nonequilibrium growth. The research on growth dynamics and carrier control of GaN-based material has important research significance and practical value

and is attracting the attention of scientific and industrial communities. In this paper

the growth dynamics and carrier control of GaN-based material with large mismatch and strong polarization is investigated

in order to get over the bottle-neck of low emitting efficiency of blue light

break through the difficulty of fabricating GaN-based material with high Al- and high In-composition

and achieve high mobility of heterostructure material and high quantum efficiency of optoelectronic devices. By the fabrication of emitting devices with high-efficiency multi-wavelength and electronic devices with high-frequency high-breakdown

the technology innovation

industrial transformation and upgrade can be realized.

关键词

Keywords

references

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LI S M, ZHOU Y, GAO H W, et al.. Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT hetero-structure [J]. AIP Advances, 2016, 6:035308.

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YUE Y Z, XING H L, GUO J, et al.. Ultrascaled InAlN/GaN high electron mobility transistors with cut off frequency of 400 GHz [J]. Jpn. J. Appl. Phys., 2013, 52(8S):08JN14.

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