Simulation and Experimental Verification of Organic Field Effect Transistor Characteristic Based on Finite Element Method

WANG Qian; WU Ren-lei; WU Feng; CHENG Xiao-man

doi:10.3788/fgxb20163710.1245

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Simulation and Experimental Verification of Organic Field Effect Transistor Characteristic Based on Finite Element Method

更新时间：2020-08-12

- Simulation and Experimental Verification of Organic Field Effect Transistor Characteristic Based on Finite Element Method
- Chinese Journal of Luminescence Vol. 37, Issue 10, Pages: 1245-1252(2016)
- 作者机构：
  
  天津理工大学理学院天津,300384
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163710.1245
  CLC： O47;TN386
- Received：28 April 2016，
  
  Revised：24 May 2016，
  
  Published：05 October 2016
- 稿件说明：
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王倩, 吴仁磊, 吴峰等. 基于有限元方法的有机场效应晶体管特性模拟与实验验证[J]. 发光学报, 2016,37(10): 1245-1252

WANG Qian, WU Ren-lei, WU Feng etc. Simulation and Experimental Verification of Organic Field Effect Transistor Characteristic Based on Finite Element Method[J]. Chinese Journal of Luminescence, 2016,37(10): 1245-1252
王倩, 吴仁磊, 吴峰等. 基于有限元方法的有机场效应晶体管特性模拟与实验验证[J]. 发光学报, 2016,37(10): 1245-1252 DOI： 10.3788/fgxb20163710.1245.

WANG Qian, WU Ren-lei, WU Feng etc. Simulation and Experimental Verification of Organic Field Effect Transistor Characteristic Based on Finite Element Method[J]. Chinese Journal of Luminescence, 2016,37(10): 1245-1252 DOI： 10.3788/fgxb20163710.1245.

摘要

采用有限元方法，借助多物理场软件COMSOL模拟了底栅顶接触结构有机场效应晶体管电位和载流子浓度随源漏电压

的变化。模拟结果表明，当固定栅压

=-10 V时，改变

从0~-10 V，对于电位分布，从栅极到源漏电极竖直方向有渐进的变化，而从源极到漏极的水平方向呈现由大到小明显的梯度变化。对于载流子浓度，观察到沟道处从源极向漏极逐渐减少，在靠近漏极的区域减少得尤为明显，而当源漏电压等于栅极电压时，产生夹断现象。进一步将模拟结果与实际制备的器件性能进行了对比，模拟结果与实验数据所显示的分布趋势大体相同，印证了模拟的合理性。由此表明，采用模拟方法分析有机场效应晶体管的器件特性，对于实际制备器件具有重要的指导意义。

Abstract

The distribution of potential and carrier density under various source drain voltage of organic field effect transistor with bottom-gate top-contact geometry was simulated using the multi-physical field software COMSOL on the basis of the finite element method. The potential has gradually changed from source electrode to gate electrode in the vertical direction with the increase of source drain voltage on the gate voltage

=-10 V and source drain voltage

in the range from 0 to -10 V

while the potential in the horizontal direction is even more obvious

which shows a gradient change from high to low. For the carrier density

the distribution of the carrier density reduces gradually from source electrode to drain electrode in the channel

and an evident reduction can be observed near the drain with the increase of source drain voltage. When the source drain voltage is equal to the gate voltage

the carrier density in the area reduces to a minimum and the phenomenon of pinch-off occurrs. Comparing the simulation results with the performance of devices

it is found that the simulation results have the same variation trend as that of the experimental data

which confirms the rationality of the simulation. In a word

it is instructive that the simulation method can be employed to analyze the characteristics of organic field effect transistor for the practical devices fabrication.

关键词

Keywords

references

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