Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module

HU Yu-feng; LI Guan-ming; WU Wei-jing; XU Miao; WANG Lei; PENG Jun-biao

doi:10.3788/fgxb20163710.1223

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Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module

更新时间：2020-08-12

- Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module
- Chinese Journal of Luminescence Vol. 37, Issue 10, Pages: 1223-1229(2016)
- 作者机构：
  
  1. 华南理工大学电子与信息学院,广东广州,510641
  2. 华南理工大学发光材料与器件国家重点实验室, 广东广州 510641
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163710.1223
  CLC： TP394.1;TH691.9
- Received：01 May 2016，
  
  Revised：24 May 2016，
  
  Published：05 October 2016
- 稿件说明：
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胡宇峰, 李冠明, 吴为敬等. 二次耦合直流输出的金属氧化物TFT行驱动电路[J]. 发光学报, 2016,37(10): 1223-1229

HU Yu-feng, LI Guan-ming, WU Wei-jing etc. Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module[J]. Chinese Journal of Luminescence, 2016,37(10): 1223-1229
胡宇峰, 李冠明, 吴为敬等. 二次耦合直流输出的金属氧化物TFT行驱动电路[J]. 发光学报, 2016,37(10): 1223-1229 DOI： 10.3788/fgxb20163710.1223.

HU Yu-feng, LI Guan-ming, WU Wei-jing etc. Gate Driver Integrated by MOTFTs Using Twice-bootstrap DC Output Module[J]. Chinese Journal of Luminescence, 2016,37(10): 1223-1229 DOI： 10.3788/fgxb20163710.1223.

摘要

为了弥补现有氧化物TFT的行驱动电路输出模块在功率消耗、响应速度、输出摆幅等方面的不足，提出了基于二次耦合的直流输出模块，并由此研究设计新的行驱动电路拓扑。仿真结果表明，该输出模块具有驱动能力强、响应速度快等优点。最后，基于刻蚀阻挡层（ESL）结构的氧化物TFT工艺，在玻璃衬底上成功制备了该行驱动电路，实测单级功耗为325 W。

Abstract

The gate driver integrated by metal oxide thin film transistors is able to lower the cost of driving ICs and narrow the bezel of display panel

but there are some disadvantages like poor power efficiency

slow response speed and small output swing for the existing output modules. In order to solve these problems

a novel twice-bootstrap DC output module was proposed

and a new gate driver topology was designed based on this module. The simulation results show that the circuit has strong driving ability and fast response speed. Finally

the gate drivers were successfully fabricated on glass substrate integrated by MOTFTs with etch stop layer structure. The power consumption of single stage of the gate driver is 325 W.

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references

LIN C L, TU C D, WU C E, et al.. Low-power gate driver circuit for TFT-LCD application [J]. IEEE Trans. Electron Dev., 2012, 59(5):1410-1415.

CHU L W, LIU P T, KER M D. Design of integrated gate driver with threshold voltage drop cancellation in amorphous silicon technology for TFT-LCD application [J]. J. Disp. Technol., 2011, 7(12):657-664.

LIAO C W, HE C D, CHEN T, et al.. Implementation of an a-Si:H TFT gate driver using a five-transistor integrated approach [J]. IEEE Trans. Electron Dev., 2012, 59(8):2142-2148.

曹镛,陶洪,邹建华,等. 金属氧化物薄膜晶体管及其在新型显示中的应用 [J]. 华南理工大学学报(自然科学版), 2012, 40(10):1-11. CAO Y, TAO H, ZOU J H, et al.. Metal oxide thin film transistors and their application to novel display technology [J]. J. South China Univ. of Technol. (Nat. Sci. Ed.), 2012, 40(10):1-11. (in Chinese)

BARQUINHA P, PEREIRA L, GONALVES G, et al.. P-202L: late-news poster: long-term stability of oxide semiconductor-based TFTs [J]. SID Symp. Dig. Tech. Pap., 2010, 41(1):1376-1379.

LOOK D C, FARLOW G C, REUNCHAN P, et al.. Evidence for native-defect donors in n-type ZnO [J]. Phys. Rev. Lett., 2005, 95(22):225502-1-4.

HONG S J, KANG J S, LEE C H, et al.. P-18: low-power and small-sized scan driver using amorphous oxide TFTs [J]. SID Symp. Dig. Tech. Pap., 2012, 43(1):1108-1111.

KIM B, RYOO C I, KIM S J, et al.. New depletion-mode IGZO TFT shift register [J]. IEEE Electron Dev. Lett., 2011, 32(2):158-160.

YOO S J, HONG S J, KANG J S, et al.. A low-power single-clock-driven scan driver using depletion-mode a-IGZO TFTs [J]. IEEE Electron Dev. Lett., 2012, 33(3):402-404.

KANG C K, PARK Y S, PARK S I, et al.. 4.2: integrated scan driver with oxide TFTs using floating gate method [J]. SID Symp. Dig. Tech. Pap., 2011, 42(1):25-27.

KIM B, CHOI S C, LEE S Y, et al.. A depletion-mode a-IGZO TFT shift register with a single low-voltage-level power signal [J]. IEEE Electron Dev. Lett., 2011, 32(8):1092-1094.

WU Z Y, DUAN L Y, YUAN G C, et al.. 3.2: an integrated gate driver circuit employing depletion-mode IGZO TFTs [J]. SID Symp. Dig. Tech. Pap., 2012, 43(1):5-7.

HUANG C Y, ZHANG L R, ZHOU L, et al.. A low-power scan driver employing IZO TFTs including an AC-DC type output module [J]. Displays, 2015, 38:93-99.

LI M, LAN L F, XU M, et al.. Performance improvement of oxide thin-film transistors with a two-step-annealing method [J]. Solid-State Electron., 2014, 91:9-12.

WU W J, LI G M, XIA X H, et al.. Low-power bi-side scan driver integrated by IZO TFTs including a clock-controlled inverter [J]. J. Disp. Technol., 2014, 10(7):523-525.

张立荣,马雪雪,王春阜,等. 基于金属氧化物薄膜晶体管的高速行集成驱动电路 [J]. 物理学报, 2016, 65(2):028501-1-8. ZHANG L R, MA X X, WANG C F, et al.. High speed gate driver circuit basd on metal oxide thin film transistors [J]. Acta Phys. Sinica, 2016, 65(2):028501-1-8. (in Chinese)

WU W J, SONG X F, ZHANG L R, et al.. A highly stable biside gate driver integrated by IZO TFTs [J]. IEEE Trans. Electron Dev., 2014, 61(9):3335-3338.

LIN C L, TU C D, CHUANG M C, et al.. Design of bidirectional and highly stable integrated hydrogenated amorphous silicon gate driver circuits [J]. J. Disp. Technol., 2011, 7(1):10-18.

ZHENG G T, LIU P T, WU M C, et al.. Design of bidirectional and low power consumption gate driver in amorphous silicon technology for TFT-LCD application [J]. J. Disp. Technol., 2013, 9(2):91-99.

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