Infrared Absorption Spectra and Electrical Properties of Si Substrate Ge Thin Films

WEN Shu-min; ZHAO Chun-wang; WANG Xi-jun; LI Ji-jun; HOU Qing-yu

doi:10.3788/fgxb20163710.1177

您当前的位置：

首页 >

文章列表页 >

Infrared Absorption Spectra and Electrical Properties of Si Substrate Ge Thin Films

更新时间：2020-08-12

- Infrared Absorption Spectra and Electrical Properties of Si Substrate Ge Thin Films
- Chinese Journal of Luminescence Vol. 37, Issue 10, Pages: 1177-1181(2016)
- 作者机构：
  
  1. 内蒙古工业大学理学院,内蒙古呼和浩特,010051
  2. 上海海事大学文理学院, 上海 201306
  3. 乌兰察布广播电视台, 内蒙古集宁,012000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163710.1177
  CLC： O722;O484.4
- Received：01 May 2016，
  
  Revised：17 August 2016，
  
  Published：05 October 2016
- 稿件说明：
移动端阅览
温淑敏, 赵春旺, 王细军等. 硅基锗薄膜的红外吸收谱和电学特性[J]. 发光学报, 2016,37(10): 1177-1181

WEN Shu-min, ZHAO Chun-wang, WANG Xi-jun etc. Infrared Absorption Spectra and Electrical Properties of Si Substrate Ge Thin Films[J]. Chinese Journal of Luminescence, 2016,37(10): 1177-1181
温淑敏, 赵春旺, 王细军等. 硅基锗薄膜的红外吸收谱和电学特性[J]. 发光学报, 2016,37(10): 1177-1181 DOI： 10.3788/fgxb20163710.1177.

WEN Shu-min, ZHAO Chun-wang, WANG Xi-jun etc. Infrared Absorption Spectra and Electrical Properties of Si Substrate Ge Thin Films[J]. Chinese Journal of Luminescence, 2016,37(10): 1177-1181 DOI： 10.3788/fgxb20163710.1177.

摘要

为了解退火对硅基锗薄膜的质量、红外吸收、透射率和电学性质的影响，采用分子束外延方法用两步法在硅基上生长锗薄膜。将生长后的样品分成两部分，其中一部分进行了退火处理。对退火前后的样品用高分辨X射线双晶衍射仪测量了（400）晶面的X射线双晶衍射摇摆曲线，用傅里叶红外光谱仪测量了红外透射率和吸收谱，并用霍尔效应仪测量了退火前后样品的载流子浓度、迁移率、电阻率、电导率和霍尔系数。结果表明，退火后的薄膜质量明显提高。退火后大部分区域吸收增大，透射率明显减小，615~3 730 cm

-1

区间的透射率均比退火前降低了20%以上。退火后的体载流子浓度增大到退火前的23.26倍，迁移率增大到退火前的27.82倍。

Abstract

In order to understand the influence of annealing on the epitaxial film quality and optoelectronic properties

an epitaxial Ge film was grown on a Si(001) substrate

via

the two-step process using molecular beam epitaxy technique. The sample was divided into two pieces

and one piece of the sample was annealed. X ray double crystal diffraction rocking curves of (400) crystal plane for non-annealed and annealed epitaxial Ge films were measured by the high resolution double-crystal X-ray diffractometer. Fourier transform infrared transmittance and absorption spectra for non-annealed and annealed epitaxial Ge films were measured by the Fourier transform infrared spectrometer. The carrier concentration

mobility

resistivity

conductivity

and Hall coefficient of non-annealed and annealed epitaxial Ge films were also measured using the Hall effect device. The results show that the anneal treatment can improve the quality of epitaxial Ge films significantly. The absorption rate increases after anneal treatment and the transmittance in most area of epitaxial Ge film decreases dramatically. The transmittance decreases by 20% in the range of 615 to 3 730 cm

-1

. The carrier concentration increases 22.26 times

and the carrier mobility increases 27.82 times after anneal treatment.

关键词

Keywords

references

杨树人,王宗昌,王兢. 半导体材料 [M]. 2版. 北京:科学出版社, 2004. YANG S R, WANG Z C, WANG J. Semiconductor Material [M]. 2nd ed. Beijing: Science Press, 2004. (in Chinese)

LIU J L, TONG S, LUO Y H, et al.. High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers [J]. Appl. Phys. Lett., 2001, 79(21):3431-3433.

NAKAMURA Y, MURAYAMA A, ICHIKAWA M. Epitaxial growth of high quality Ge films on Si(001) substrates by nanocontact epitaxy [J]. Cryst. Growth Des., 2011, 11(7):3301-3305.

WU H C, LIN B H, CHEN H C, et al.. One-step Ge/Si epitaxial growth [J]. Appl. Mater. Interf., 2011, 3(7):2398-2401.

YE H, YU J Z. Germanium epitaxy on silicon [J]. Sci. Technol. Adv. Mater., 2014, 15(2):024601-1-9.

THOMPSON S E, ARMSTRONG M, AUTH C, et al.. A logic nanotechnology featuring strained-silicon [J]. IEEE Electron Dev. Lett., 2004, 25(4):191-193.

CHENG B W, XUE H Y, XUE C L, et al.. Silicon-based long wavelength photodetectors [C]. Asia Communications and Photonics Conference and Exhibition, Shanghai, China, 2009.

HUANG Z H, OH J, CAMPBELL J C. Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers [J]. Appl. Phys. Lett., 2004, 85(15):3286-3288.

汪建元,王尘,李成,等. 硅基锗薄膜选区外延生长研究 [J]. 物理学报, 2015, 64(12):128102-1-5. WANG J Y, WANG C, LI C, et al.. Selective area growth of Ge film on Si [J]. Acta Phys. Sinica, 2015, 64(12):128102-1-5. (in Chinese)

JOBSON K W, WELLS J P R, SCHROPP R E I, et al.. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium [J]. J. Appl. Phys., 2008, 103(1):013106-1-5.

COLLINS R J, FAN H Y. Infrared lattice absorption bands in germanium, silicon, and diamond [J]. Phys. Rev., 1954, 93(4):674-678.

RIVAS J G, SPRIK R, LAGENDIJK A, et al.. Midinfrared scattering and absorption in Ge powder close to the Anderson localization transition [J]. Phys. Rev. E, 2000, 62(4):R4540-R4543.

WANG X X, LI H F, CAMACHO-AGUILERA R, et al.. Infrared absorption of n-type tensile-strained Ge-on-Si [J]. Opt. Lett., 2013, 38(5):652-654.

KALEM S, WERNER P, TALALAEV V. Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment [J]. Appl. Phys. A, 2013, 112(3):561-567.

LI T W, ZHANG J J, CAO Y, et al.. Optical absorption enhancement of c-SiGe:H films deposited via high pressure and high power [J]. Optoelectron. Lett., 2014, 10(3):202-205.

LIU D D, LIU H S, JIANG C H, et al.. Temperature dependence of the infrared optical constants of germanium films [J]. Thin Solid Films, 2015, 592: 292-295.

CLARK A H. Electrical and optical properties of amorphous germanium [J]. Phys. Rev., 1967, 154(3):750-757.

TSAO C Y, WONG J, HUANG J L, et al.. Structural dependence of electrical properties of Ge films prepared by RF magnetron sputtering[J]. Appl. Phys. A, 2011, 102(3):689-694.

刘石勇,李旺,牛新伟,等. 非晶硅锗薄膜与太阳能电池研究 [J]. 人工晶体学报, 2014, 43(4):765-770. LIU S Y,LI W,NIU X W,et al.. Study on amorphous silicon germanium(a-SiGe) thin films and solar cells [J]. J. Synth. Cryst., 2014, 43(4):765-770. (in Chinese)

LENG J, ZHAO L, JI Y Q. Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition [J]. Appl. Opt., 2014, 53(4):A48-A51.

SU S J, WANG W, CHENG B W, et al.. Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates [J]. J. Cryst. Growth, 2011, 317(1):43-46.

苏少坚,汪巍,张广泽,等. Si(001)衬底上分子束外延生长Ge0.975Sn0.025合金薄膜 [J]. 物理学报, 2011, 60(2):028101-1-5. SU S J, WANG W, ZHANG G Z, et al.. Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy [J]. Acta Phys. Sinica, 2011, 60(2):028101-1-5. (in Chinese)

朱南昌,李润身,陈京一,等. 外延层组分界面状况的X射线双晶衍射测定 [J]. 半导体学报, 1995, 16(1):42-47. ZHU N C, LI R S, CHEN J Y, et al.. Determination of composition and interface condition of epitaxial layer by X-ray double-crystal diffraction [J]. Chin. J. Semicond., 1995, 16(1):42-47. (in Chinese)

Views

498

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Research Progress on Rare Earth Doped Metal Oxide Thin Film Transistors

Effect of Ta₂O₅-PMMA Compound Gate Insulator on The Performance of Organic Field Effect Transistors

Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD

Effect of Anode Buffer Layer Modification on The Performance of Polymer Solar cells

Optical Transmission and Electrical Modulation for Silicone Semiconductor with Multi-field Effect

Related Author

PENG Junbiao

HUANG Xianglan

YIN Qiang

REN Li-peng

LI Chun-jing

WANG Wei

SHI Xiao-dong

LIU Shi-yong

Related Institution

State Key Laboratory of Luminescent Materials and Devices， South China University of Technology

School of Electronics and Information Engineering, Hebei University of Technology, Tianjin Key Laboratory of Electronic Materials and Device

Chint Solar(Zhejiang) Co. Ltd., Hangzhou 310053, China

Institute of Business Administration, Jiangxi University of Technology

Center of Collaboration and Innovation, Jiangxi University of Technology, Nanchang 330098, China

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰