High Temperature Reliability of High-power LED Module Using Die Attach Material of Nano-silver Paste

CHEN Jia; LI Xin; KONG Ya-fei; MEI Yun-hui; LU Guo-quan

doi:10.3788/fgxb20163709.1159

您当前的位置：

首页 >

文章列表页 >

High Temperature Reliability of High-power LED Module Using Die Attach Material of Nano-silver Paste

更新时间：2020-08-12

- High Temperature Reliability of High-power LED Module Using Die Attach Material of Nano-silver Paste
- Chinese Journal of Luminescence Vol. 37, Issue 9, Pages: 1159-1165(2016)
- 作者机构：
  
  1. 天津大学材料科学与工程学院天津,300072
  2. 弗吉尼亚理工大学材料科学与工程学院, 弗吉尼亚州蒙哥马利,24060
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163709.1159
  CLC： TN312.8
- Received：05 April 2016，
  
  Revised：22 April 2016，
  
  Published：05 September 2016
- 稿件说明：
移动端阅览
陈佳, 李欣, 孔亚飞等. 纳米银焊膏烧结大功率LED模块的高温可靠性研究[J]. 发光学报, 2016,37(9): 1159-1165

CHEN Jia, LI Xin, KONG Ya-fei etc. High Temperature Reliability of High-power LED Module Using Die Attach Material of Nano-silver Paste[J]. Chinese Journal of Luminescence, 2016,37(9): 1159-1165
陈佳, 李欣, 孔亚飞等. 纳米银焊膏烧结大功率LED模块的高温可靠性研究[J]. 发光学报, 2016,37(9): 1159-1165 DOI： 10.3788/fgxb20163709.1159.

CHEN Jia, LI Xin, KONG Ya-fei etc. High Temperature Reliability of High-power LED Module Using Die Attach Material of Nano-silver Paste[J]. Chinese Journal of Luminescence, 2016,37(9): 1159-1165 DOI： 10.3788/fgxb20163709.1159.

摘要

介绍了一种加速老化试验模型对LED模块进行寿命预测。分别采用纳米银焊膏、锡银铜焊料、导电银胶作为芯片粘结材料。控制环境温度和正向电流，在特定的时间测量光输出。比较了不同粘接材料及环境温度对LED老化过程的影响，并针对老化过程进行分析推导，建立老化数学模型，对其进行寿命预测。试验结果表明，纳米银焊膏粘接的模块对温度的抗性最好，纳米银焊膏有潜力在未来固态照明、投影和其他高功率器件领域得到应用。

Abstract

A general procedure for accelerated degradation testing (ADT) was presented to predict the lifetime of three kinds of LED modules. The die attach materials of LED modules were nano-silver paste

Sn3Ag0.5Cu (Sn-based alloys)

silver epoxy

respectively. The ambient temperature and forward current were controlled

and the light output at several time points was measured. The degradation mechanism of LEDs modules was analyzed. The lifetimes of LED modules under the condition of different die attach materials were predicted. The test results show that the nano-silver paste is a very promising die-attach material for the aging of multi-chip high power LED modules.

关键词

Keywords

references

王加文,苏宙平,袁志军,等. LED阵列模组化中的照度均匀性问题[J]. 光子学报, 2014, 43(8):0822004. WANG J W, SU Z P, YUAN Z J, et al.. Study on uniformity of LED array illumination distribution on target plane[J]. Acta Photon. Sinica, 2014, 43(8):0822004. (in Chinese)

裘燕青,张刘刘,陈苗根,等. 板上芯片集成封装发光二极管的光色检测系统[J]. 光学精密工程, 2016, 24(1):39-44. QIU Y Q, ZHANG L L, CHEN M G, et al.. Photoelectric parameter measurement system for chip-on-board wafer level packaging LEDs[J]. Opt. Precision Eng., 2016, 24(1):39-44. (in Chinese)

宁磊,史永盛,史耀华,等. LED封装结构对出光率的影响[J]. 液晶与显示, 2010, 25(6):822-825. NING L, SHI Y S, SHI Y H, et al.. Influence of package structure on LED light extraction[J]. Chin. J. Liq. Cryst. Disp., 2010, 25(6):822-825. (in Chinese)

白一鸣,罗毅,韩彦军,等. 集成封装发光二极管光提取效率的计算及优化[J]. 光学精密工程, 2014, 22(5):1129-1137. BAI Y M, LUO Y, HAN Y J, et al.. Calculation and optimization of light extraction efficiency for integrated LED[J]. Opt. Precision Eng., 2014, 22(5):1129-1137. (in Chinese)

董丽,刘华,王尧,等. 紧凑型LED配光设计中光源模型可靠性研究[J]. 光子学报, 2014, 43(2):0222003. DONG L, LIU H, WANG Y, et al.. Reliability of light source modeling for distribution design on compact LED[J]. Acta Photon. Sinica, 2014, 43(2):0222003. (in Chinese)

PENG S P, WU W H, HO C E, et al.. Comparative study between Sn37Pb and Sn3Ag0.5Cu soldering with Au/Pd/Ni(P) tri-layer structure[J]. J. Alloys Compd., 2010, 493(1-2):431-437.

ZHANG Z Y. Processing and characterization of micro-scale and nanoscale silver paste for power semiconductor device attachment[J]. Mater. Sci. Eng., 2005:A484-469.

KING D B, THOME F V. Sessions X & XI transaction[C]. International High Temperature Electronic Conference, Strasbourg, France, 1994:X-1-XI-28.

BAI J G, ZHANGZ Z, CALATA J N, et al.. Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material[J]. IEEE Trans. Comp. Pack. Technol., 2006, 29(3):589-593.

NARENDRAN N, GU Y, FREYSSINIER J P, et al.. Solid-state lighting:failure analysis of white LEDs[J]. J. Cryst. Growth, 2004, 268(3-4):449-456.

MARSEGUERRA M, ZIO E, CIPOLLONE M.Designing optimal degradation tests via multi-objective genetic algorithms[J]. Reliab. Eng. Syst. Saf., 2003, 79(1):87-94.

ESCOBAR L A, MEEKER W Q. A review of accelerated test models[J]. Stat. Sci., 2006, 21(4):552-577.

YUAN X X, PANDEY M D. A nonlinear mixed-effects model for degradation data obtained from in-service inspections[J]. Reliab. Eng. Syst. Saf., 2009, 94(2):509-519.

MOHAMMADIAN S H, AT-KADI D, ROUTHIER F. Quantitative accelerated degradation testing:practical approaches[J]. Reliab. Eng. Syst. Saf., 2010, 95(2):149-159.

CHANG M H, DAS D, VARDE P V, et al.. Light emitting diodes reliability review[J]. Microelectron. Reliab., 2012, 52(5):762-782.

肖友鹏,莫春兰,邱冲,等. Si衬底GaN基蓝光LED老化性能[J]. 发光学报, 2010, 31(3):364-368. XIAO Y P, MO C L, QIU C, et al.. The aging characteristics of GaN-based blue LED on Si substrate[J]. Chin. J. Lumin., 2010, 31(3):364-368. (in Chinese)

陈志忠,秦志新,胡晓东,等. 大功率白光LED的制备和表征[J]. 液晶与显示, 2004, 19(2):83-86. CHEN Z Z, QIN Z X, HU X D, et al. Fabrication and characterization of high-power white LED[J]. Chin. J. Liq. Cryst. Disp., 2004, 19(2):83-86. (in Chinese)

余菲, 金雷. GaN发光二极管的老化数学模型及寿命测试方法[J]. 中国激光, 2011, 38(8):0806001-1-4. YU F, JIN L. Mathematical model of aging and the life test method for GaN LED[J]. Chin. J. Lasers, 2011, 38(8):0806001-1-4. (in Chinese)

ZHOU J M, YAN W. Experimental investigation on the performance characteristics of white LEDs used in illumination application[C]. Proceedings of The 2007 IEEE Power Electronics Specialists Conference, Orlando, USA, 2007:1436-1440.

STREUBEL K, LINDER N, WIRTH R, et al.. High brightness AlGaInP light-emitting diodes[J]. IEEE J. Select. Top. Quant. Electron., 2002, 8(2):321-332.

GRILLOT P N, KRAMES M R, ZHAO H M, et al.. Sixty thousand hour light output reliability of AlGaInP light emitting diodes[J]. IEEE Trans. Dev. Mater. Reliab., 2006, 6(4):564-574.

MENEGHINI M, TREVISANELLO L, SANNA C, et al.. High temperature electro-optical degradation of InGaN/GaN HBLEDs[J]. Microelectron. Reliab., 2007, 47(9-11):1625-1629.

ISHIZAKI S, KIMURA H, SUGIMOTO M. Lifetime estimation of high power white LEDs[J]. J. Light Vis. Environ., 2007, 31(1):11-18.

TREVISANELLO L, MENEGHINI M, MURA G, et al.. Accelerated life test of high brightness light emitting diodes[J]. IEEE Trans. Dev. Mater. Reliab., 2008, 8(2):304-311.

周青超,柏泽龙,鲁路,等. 白光LED远程荧光粉技术研究进展与展望[J]. 中国光学, 2015, 8(3):313-328. ZHOU Q C, BAI Z L, LU L, et al.. Remote phosphor technology for white LED applications:advances and prospects[J]. Chin. Opt., 2015, 8(3):313-328. (in Chinese)

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Time-resolved Imaging Using Lanthanide-doped Nanomaterials

Analysis of Organic Light Emitting Diode Under Electrostatic Discharge Stresses

Synthesis and Down-conversion Luminescence of Er³⁺,Yb³⁺ Codoped NaYF₄ Phosphors

Synthesis and Near-infrared Quantum Cutting of Tb³⁺, Yb³⁺ Codoped BaGd₂ZnO₅ Phosphors

Structural and Optical Peroperties of Mg_xZn_1-xO Films

Related Author

Guan-ying CHEN

Xiao-jun HAN

Xin WANG

CAO Jin

ZHANG Jian-hua

CHEN Zhang-fu

XU Xiao-xue

YANG Lian-qiao

Related Institution

School of Chemistry and Chemical Engineering, Harbin Institute of Technology

上海大学机电工程与自动化学院新型显示及集成应用教育部重点实验室

College of Physics Science and Technology, Heibei University

Department of Physics, Tonghua Normal College

中山大学, 光电材料与技术国家重点实验室

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰