Effect of Doping Graphene Quantum Dots on The Performance of P3HT: PCBM Solar Cells

ZOU Feng-jun; FAN Si-da; XIE Qiang; SUN Yang; SUN Li-jing; LI Zhan-guo; WANG Li-juan

doi:10.3788/fgxb20163709.1082

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Effect of Doping Graphene Quantum Dots on The Performance of P3HT: PCBM Solar Cells

更新时间：2020-08-12

- Effect of Doping Graphene Quantum Dots on The Performance of P3HT: PCBM Solar Cells
- Chinese Journal of Luminescence Vol. 37, Issue 9, Pages: 1082-1089(2016)
- 作者机构：
  
  1. 长春工业大学化学工程学院,吉林长春,130012
  2. 长春工业大学基础科学学院,吉林长春,130012
  3. 长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163709.1082
  CLC： O649
- Received：08 April 2016，
  
  Revised：09 May 2016，
  
  Published：05 September 2016
- 稿件说明：
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邹凤君, 范思大, 谢强等. 掺杂石墨烯量子点对P3HT:PCBM太阳能电池性能的影响[J]. 发光学报, 2016,37(9): 1082-1089

ZOU Feng-jun, FAN Si-da, XIE Qiang etc. Effect of Doping Graphene Quantum Dots on The Performance of P3HT: PCBM Solar Cells[J]. Chinese Journal of Luminescence, 2016,37(9): 1082-1089
邹凤君, 范思大, 谢强等. 掺杂石墨烯量子点对P3HT:PCBM太阳能电池性能的影响[J]. 发光学报, 2016,37(9): 1082-1089 DOI： 10.3788/fgxb20163709.1082.

ZOU Feng-jun, FAN Si-da, XIE Qiang etc. Effect of Doping Graphene Quantum Dots on The Performance of P3HT: PCBM Solar Cells[J]. Chinese Journal of Luminescence, 2016,37(9): 1082-1089 DOI： 10.3788/fgxb20163709.1082.

摘要

为研究掺杂石墨烯量子点（GQDs）对聚合物电池的影响，采用溶剂热法制备了GQDs，掺杂到聚3-己基噻吩和富勒烯衍生物（P3HT：PCBM）中作光敏层制备了聚合物太阳能电池。掺杂不同浓度的GQDs后，聚合物电池的开路电压和填充因子都比未掺杂器件高。GQDs掺杂质量分数为0.15%时，形成的掺杂薄膜平整、均匀，填充因子提高了17.42%。GQDs经还原后，随还原时间的延长，填充因子FF增大。到45 min时，电池的FF基本稳定，从31.57%提高至40.80%，提高了29.24%。退火后，获得了最佳的掺杂GQDs的聚合物太阳能电池，开路电压

为0.54 V，填充因子FF为55.56%，光电转换效率为0.75%。

Abstract

In order to study the effect of doping graphene quantum dots (GQDs) on polymer solar cells

GQDs were prepared by solvothermal route. The polymer solar cells were prepared by doping GQDs in poly (3-hexylthiophene):6

6-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) as a photosensitive layer. Compared with P3HT:PCBM solar cells

the performance of polymer solar cells with different doping concentration of GQDs in P3HT:PCBM solution was improved. The optimized device was P3HT:PCBM:GQDs (0.15% mass fraction) with smooth and uniform thin films

and the fill factor (FF) was 17.42% higher than the solar cells without GQDs. To improve the performance of solar cells further

GQDs were reduced. The FF increased with the reductive time. At 45 min reductive time

the FF was improved from 31.57% to 40.80%

which was 29.24% higher than the solar cells without GQDs. The optimum polymer solar cell was obtained after annealing P3HT:PCBM:GQDs solar cell. The open voltage (

) was 0.54 V

FF was 55.56%

and the efficiency was 0.75%.

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