Mode Competition in The Proton Implanted VCSEL by Injected Current

ZHAO Hong-dong; PENG Xiao-can; MA Li; SUN Mei

doi:10.3788/fgxb20163708.0996

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Mode Competition in The Proton Implanted VCSEL by Injected Current

更新时间：2020-08-12

- Mode Competition in The Proton Implanted VCSEL by Injected Current
- Chinese Journal of Luminescence Vol. 37, Issue 8, Pages: 996-1001(2016)
- 作者机构：
  
  1. 河北工业大学电子信息工程学院, 天津 300401
  2. 河北工业大学电气工程学院天津,300130
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163708.0996
  CLC： TN248.4
- Received：30 January 2016，
  
  Revised：29 March 2016，
  
  Published：05 August 2016
- 稿件说明：
移动端阅览
赵红东, 彭晓灿, 马俐等. 注入电流引起质子轰击VCSEL中的模式竞争[J]. 发光学报, 2016,37(8): 996-1001

ZHAO Hong-dong, PENG Xiao-can, MA Li etc. Mode Competition in The Proton Implanted VCSEL by Injected Current[J]. Chinese Journal of Luminescence, 2016,37(8): 996-1001
赵红东, 彭晓灿, 马俐等. 注入电流引起质子轰击VCSEL中的模式竞争[J]. 发光学报, 2016,37(8): 996-1001 DOI： 10.3788/fgxb20163708.0996.

ZHAO Hong-dong, PENG Xiao-can, MA Li etc. Mode Competition in The Proton Implanted VCSEL by Injected Current[J]. Chinese Journal of Luminescence, 2016,37(8): 996-1001 DOI： 10.3788/fgxb20163708.0996.

摘要

为了分析质子轰击垂直腔面发射激光器（VCSEL）中注入电流引起的激光模式竞争过程，在三维空间中对VCSEL激射后光电热进行了研究。给出仿真光电热的方程之后，在室温连续工作条件下，对电流孔半径

为4m、阈值电流I

为4.5 mA的VCSEL进行自洽求解。当注入电流I

分别为5.0，5.5，6.0 mA时，得到了对应的外加电压和输出光功率，并绘制了VCSEL的电势、注入电流、载流子、光场和热场的空间分布，给出了连续工作下输出光功率随注入电流变化的曲线。仿真结果表明：随着注入VCSEL中的电流增加，电流密度增大，激光的横向基模和横向一阶模式同时增强。横向一阶模式增加的强度及扩展的范围大于横向基模，激光输出能量逐渐向横向一阶模式过渡，横向模式竞争的同时产生载流子空间烧孔，因此在电流孔半径

m的VCSEL中，连续工作激光模式不稳定。

Abstract

In order to present the process of mode competition with increasing injected current in the proton-implanted vertical cavity surface emitting laser (VCSEL)

the electric field

carrier

optical and temperature in its lasing were studied in the three dimensions. The opto-electro-thermal self-consistent simulation for the proton-implanted VCSEL under CW operation at room temperature was given after the equations for electric field

carrier

optical and temperature were shown. The voltage electrode and output power were obtained in the proton-implanted VCSEL with current aperture radius

=4 m and threshold injected current I

=4.5 mA under the injected current I

=5.0

5.5

6.0 mA

respectively. The distributions of electric field

carrier

optical and temperature were obtained in the continuous wave proton-implanted VCSEL. The dependent of the output power on the injected current in proton-implanted VCSEL was also derived. The results show that the injected current density is improved and expanded respectively with the increasing of the injected current. The first order transverse mode increases higher than the transverse fundamental mode while the two laser transverse modes are both improved. The output energy is gradual transition to the first order transverse mode. The space burn for carrier in the activity region is found as the mode competition. The laser transverse mode in continuous wave operation for proton-implanted VCSEL with current confinement radius

4 m is unstable.

关键词

Keywords

references

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