High Brightness Tapered Diode Laser

LI Jing; QIU Yun-tao; CAO Yin-hua; WANG Qing; YAO Shun; QIN Wen-bin; LIU You-qiang; WANG Zh

doi:10.3788/fgxb20163708.0990

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High Brightness Tapered Diode Laser

更新时间：2020-08-12

- High Brightness Tapered Diode Laser
- Chinese Journal of Luminescence Vol. 37, Issue 8, Pages: 990-995(2016)
- 作者机构：
  
  北京工业大学激光工程研究院北京,100124
- 作者简介：
- 基金信息：
  
  Supported by "
- DOI：10.3788/fgxb20163708.0990
  CLC： TN24;TN31
- Received：01 April 2016，
  
  Revised：24 May 2016，
  
  Published：05 August 2016
- 稿件说明：
移动端阅览
李景, 邱运涛, 曹银花等. 高亮度锥形半导体激光器[J]. 发光学报, 2016,37(8): 990-995

LI Jing, QIU Yun-tao, CAO Yin-hua etc. High Brightness Tapered Diode Laser[J]. Chinese Journal of Luminescence, 2016,37(8): 990-995
李景, 邱运涛, 曹银花等. 高亮度锥形半导体激光器[J]. 发光学报, 2016,37(8): 990-995 DOI： 10.3788/fgxb20163708.0990.

LI Jing, QIU Yun-tao, CAO Yin-hua etc. High Brightness Tapered Diode Laser[J]. Chinese Journal of Luminescence, 2016,37(8): 990-995 DOI： 10.3788/fgxb20163708.0990.

摘要

介绍了由双量子阱非对称波导结构外延片刻蚀成的带有脊形波导结构的锥形半导体激光器。该激光器有效抑制了p型区域对激光的影响，减小了半导体激光快轴方向的发散角，同时采用脊形结构和锥形结构的组合获得了高亮度激光。实验中，在电流7 A时获得了中心波长963 nm、连续功率4.026 W的激光输出。测得慢轴方向和快轴方向激光光束参数乘积分别为1.593 mmmrad和0.668 mmmrad。

Abstract

Tapered diode laser with ridge waveguide was introduced and formed through etching the wafer with asymmetrical waveguide structure and double quantum walls. In the laser

the negative effect of p-cladding layer was decreased and the vertical divergence angle was reduced. The high brightness power is arrived on account of the combination of the ridge waveguide and the taper waveguide. In experiment

the laser delivers 976 nm and 4 W CW at 7 A current. The slow direction beam quality and the fast direction beam quality are measured of 1.593 mmmrad and 0.668 mmmrad

respectively.

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Keywords

references

王立军,彭航宇,张俊.大功率半导体激光合束进展[J].中国光学, 2015, 8(4):517-534. WANG L J, PENG H Y, ZHANG J. Advance on high power diode laser coupling[J]. Chin. Opt., 2015, 8(4):517-534. (in Chinese)

WALPOLE J N. Semiconductor amplifiers and lasers with tapered gain regions[J]. Opt. Quant. Electron., 1996, 28(6):623-645.

SUJECKI S, BORRUEL L, WYKES J, et al.. Nonlinear properties of tapered laser cavities[J]. IEEE J. Select. Top. Quant. Electron., 2003, 9(3):823-834.

BORRUEL L, SUJECKI S, MORENO P, et al.. Quasi-3-D simulation of high-brightness tapered lasers[J]. IEEE J. Quant. Electron., 2004, 40(5):463-472.

PASCHKE K, SWNPF B, DITTMAR F, et al.. 5.3 W CW high brightness 980-nm tapered diode lasers[C]. Proceedings of Conference on Lasers and Electro-Optics Europe, Munich, Germany, 2005:12489.

SUMPF B, BEISTER G, ERBERT G, et al.. Reliable 1-W CW operation of high-brightness tapered diode lasers at 735 nm[J]. IEEE Photon. Technol. Lett., 2004, 16(4):984-986.

KALLENBACH S, KELEMEN M T, AIDAM R, et al.. High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm[J].SPIE, 2005:406-415.

李璟,刘媛媛,马骁宇.电极分离的980 nm锥形激光器的研制[J].半导体学报, 2007, 28(8):1302-1306. LI J, LIU YY, MA X Y. High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J]. Chin. J. Semicond., 2007, 28(8):1302-1306. (in Chinese)

OSTENDORF R, KAUFEL G, MORITZ R, et al.. 10 W high-efficiency high-brightness tapered diode lasers at 976 nm[J]. SPIE,2008:68760H.

杨晔,刘云,张金龙,等. 850 nm高亮度近衍射极限锥形半导体激光器[J].发光学报, 2011,32(10):1064-1068. YANGY, LIU Y, ZHANG J L, et al.. Near diffraction limit high-brightness 850 nm tapered laser diodes[J]. Chin. J. Lumin., 2011, 32(10):1064-1068. (in English)

曲博文. 808 nm锥形半导体激光器的设计[D].长春:长春理工大学, 2010. QU B W. Design of 808 nm Tapered Semiconductor Lasers[D]. Changchun:Changchun University of Science and Technology, 2010. (in Chinese)

GKDEN B, MANSURIPUR T S, BLANCHARD R, et al.. High-brightness tapered quantum cascade lasers[J]. Appl. Phys. Lett., 2013, 102(5):053503-1-4.

GAO W, XU Z T, CHENG L S, et al.. High power high brightness single emitter laser diodes at axcel photonics[J].SPIE, 2008, 6876:8761F.

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