Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition

GONG Zhe; HE Da-wei; WANG Yong-sheng; XU Hai-teng; DONG Yan-fang

doi:10.3788/fgxb20163708.0984

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Controllable Synthesis of High Quality Monolayer WS₂ with Large Size on Sapphire Substrate by Chemical Vapor Deposition

更新时间：2020-08-12

- Controllable Synthesis of High Quality Monolayer WS₂ with Large Size on Sapphire Substrate by Chemical Vapor Deposition
- Chinese Journal of Luminescence Vol. 37, Issue 8, Pages: 984-989(2016)
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室, 北京 100044
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163708.0984
  CLC： O484.4
- Received：28 March 2016，
  
  Revised：19 April 2016，
  
  Published：05 August 2016
- 稿件说明：
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巩哲, 何大伟, 王永生等. 化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨[J]. 发光学报, 2016,37(8): 984-989

GONG Zhe, HE Da-wei, WANG Yong-sheng etc. Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2016,37(8): 984-989
巩哲, 何大伟, 王永生等. 化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨[J]. 发光学报, 2016,37(8): 984-989 DOI： 10.3788/fgxb20163708.0984.

GONG Zhe, HE Da-wei, WANG Yong-sheng etc. Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition[J]. Chinese Journal of Luminescence, 2016,37(8): 984-989 DOI： 10.3788/fgxb20163708.0984.

摘要

在常压条件下使用CVD法生长单层WS

，通过改变实验条件实现控制晶粒大小或生长成薄膜的目的。采用光学显微镜、拉曼、光致发光谱等对制备的样品进行表征，得到了结晶质量高、尺寸达120m的单层WS

晶粒。同时讨论了几个重要参数如温度、生长时间以及钨源用量等对生长单层WS

的影响。结果表明：温度对CVD生长WS

影响最大，高温有助于生长高结晶质量的WS

。调节生长时间可以控制WS

晶粒的大小，较长时间能生长出连续的薄膜。过量的S蒸汽会抑制WS

生长，影响结晶质量。

Abstract

Single layer WS

was synthesized by atmospheric pressure CVD method. The mono-WS

of triangular grain was grown by the single controlled quartz tube furnaces on well cleaned sapphire substrates. The grain size could be controlled by adjusting the experimental conditions. Optical microscopy

Raman spectroscopy

and photoluminescence emission spectroscopy were utilized to characterize WS

samples. The Optical microscopy shows the length of triangle domain up to 120 m and the uniform of WS

. Raman spectrum of a WS

single domain demonstrates the characteristic E

(in-plane vibrational) mode and A

(out-of-plane vibrational) mode at 355.1 cm

-1

and 418.1 cm

-1

respectively. The frequency difference between E

mode and A

mode is 64 cm

-1

which matches the single-layer-thick WS

films. The PL peak of WS

is located at 619 nm (2.0 eV) which consistents with its direct-band-gap. Furthermore

the PL intensity of monolayer WS

is very strong

which reveals its high crystalline. The experiment results demonstrate that the large size mono-WS

flakes with high crystalline can be synthesized controllable on sapphire. The effects of some essential growth parameters such as the temperature

the growth time and the precursor on the controlled growth of mono-layer WS

are also discussed.

关键词

Keywords

references

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Related Institution

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