Temperature Dependence of Amplified Spontaneous Emission from Blend Film of F8BT and P3HT

WANG Wei-qian; QIN Liang; LIN Tao; HOU Yan-bing

doi:10.3788/fgxb20163708.0973

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Temperature Dependence of Amplified Spontaneous Emission from Blend Film of F8BT and P3HT

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- Temperature Dependence of Amplified Spontaneous Emission from Blend Film of F8BT and P3HT
- Chinese Journal of Luminescence Vol. 37, Issue 8, Pages: 973-978(2016)
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室, 北京 100044
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163708.0973
  CLC： O484.4
- Received：29 March 2016，
  
  Revised：21 April 2016，
  
  Published：05 August 2016
- 稿件说明：
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王尉谦, 秦亮, 林涛等. F8BT:P3HT共混薄膜放大自发辐射的温度效应[J]. 发光学报, 2016,37(8): 973-978

WANG Wei-qian, QIN Liang, LIN Tao etc. Temperature Dependence of Amplified Spontaneous Emission from Blend Film of F8BT and P3HT[J]. Chinese Journal of Luminescence, 2016,37(8): 973-978
王尉谦, 秦亮, 林涛等. F8BT:P3HT共混薄膜放大自发辐射的温度效应[J]. 发光学报, 2016,37(8): 973-978 DOI： 10.3788/fgxb20163708.0973.

WANG Wei-qian, QIN Liang, LIN Tao etc. Temperature Dependence of Amplified Spontaneous Emission from Blend Film of F8BT and P3HT[J]. Chinese Journal of Luminescence, 2016,37(8): 973-978 DOI： 10.3788/fgxb20163708.0973.

摘要

研究了温度对聚合物poly（9，9-dioctylfluorene-co-benzothiadiazole）（F8BT）和poly（3-hexylthiophene）（P3HT）共混薄膜的放大自发辐射（ASE）的影响。在80~320 K温度范围测试了不同P3HT质量比的共混聚合物薄膜和纯F8BT薄膜的ASE特性。在室温条件下，共混聚合物的阈值随着P3HT所占比例的增加先降低后升高。当P3HT比例约为20%时，阈值最低约为2.5910

W/cm

。当温度从320 K下降到80 K时，纯F8BT薄膜的ASE阈值光功率由5.3610

W/cm

下降到4.1510

W/cm

，P3HT质量比为20%的共混薄膜的ASE阈值光功率由2.8410

W/cm

下降到2.0310

W/cm

。在一特定泵浦光功率（5.2910

W/cm

）下，当温度由320 K下降至80 K时，ASE强度约提高4倍。随着温度的降低，混合物薄膜的ASE峰位红移，移动达12 nm。

Abstract

The temperature dependence of amplified spontaneous emission (ASE) from blend film of poly(9

9-dioctylfluorene-co-benzothiadiazole) (F8BT) and poly(3-hexylthiophene) (P3HT) was investigated. ASE from blend film with various P3HT mass ratio and F8BT film in the range of 80-320 K was measured. The results show that the threshold of blend film decreases at first and then increases at room temperature with the increasing of P3HT ratio. Low ASE threshold about 2.5910

W/cm

is achieved for the blend with 20% P3HT ratio. When the temperature dropped from 320 K to 80 K

ASE threshold of the blend with 20% P3HT decreases from 2.8410

W/cm

at 320 K to 2.0310

W/cm

at 80 K

and ASE output intensity at the pump intensity of 5.2910

W/cm

increases fourfold. Meanwhile

a 12 nm redshift in ASE wavelength of the blend film is found with the reducing of the temperature.

关键词

Keywords

references

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