Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED

HUANG Hua-mao; HUANG Jiang-zhu; HU Xiao-long; WANG Hong

doi:10.3788/fgxb20163708.0967

您当前的位置：

首页 >

文章列表页 >

Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED

更新时间：2020-08-12

- Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED
- Chinese Journal of Luminescence Vol. 37, Issue 8, Pages: 967-972(2016)
- 作者机构：
  
  1. 广州现代产业技术研究院, 广东广州 511458
  2. 华南理工大学广东省光电工程技术研究开发中心物理与光电学院, 广东广州 510640
- 作者简介：
- 基金信息：
  
  Supported by "
- DOI：10.3788/fgxb20163708.0967
  CLC： TN303;TN304
- Received：10 April 2016，
  
  Revised：20 May 2016，
  
  Published：05 August 2016
- 稿件说明：
移动端阅览
黄华茂, 黄江柱, 胡晓龙等. 纳米柱高度对GaN基绿光LED光致发光谱的影响[J]. 发光学报, 2016,37(8): 967-972

HUANG Hua-mao, HUANG Jiang-zhu, HU Xiao-long etc. Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED[J]. Chinese Journal of Luminescence, 2016,37(8): 967-972
黄华茂, 黄江柱, 胡晓龙等. 纳米柱高度对GaN基绿光LED光致发光谱的影响[J]. 发光学报, 2016,37(8): 967-972 DOI： 10.3788/fgxb20163708.0967.

HUANG Hua-mao, HUANG Jiang-zhu, HU Xiao-long etc. Effects of The Height of Nanorod Structure on The Photoluminescence Spectra of GaN-based Green LED[J]. Chinese Journal of Luminescence, 2016,37(8): 967-972 DOI： 10.3788/fgxb20163708.0967.

摘要

纳米柱结构是释放高In组分InGaN/GaN绿光LED量子阱层应变的有效方法。本文采用自组装的聚苯乙烯微球掩模、感应耦合等离子体干法刻蚀和KOH溶液的湿法腐蚀，在GaN基绿光LED外延片上制备了3种高度的纳米柱结构，通过扫描电子显微镜观察纳米柱结构的形貌，并测试了常温和10 K低温时的光致发光谱（PL）。结果表明：应变释放对压电场的影响显著，使得纳米柱结构样品的内量子效率（IQE）提高，PL谱峰值波长蓝移；应变在量子阱中的不均匀分布还使得PL谱半高全宽（FWHM）展宽。与普通平面结构相比，高度为747 nm的纳米柱结构可使得IQE提升917%，PL谱峰值波长蓝移18 nm、FWHM展宽7 nm。另外，纳米柱结构样品的有源区有效面积减小可使得PL谱FWHM减小。

Abstract

Nanorod structure is an effective method to release the strain in multiple quantum wells of InGaN/GaN green LED with high In component. In this paper

the natural lithography with self-assembled polystyrene microspheres

inductively coupled plasma dry etching and wet-etching using KOH aqueous solution were used to fabricate the nanorod structure with three heights in GaN-based green LED epitaxial wafers. The morphology was observed by scanning electron microscope

and the photoluminescence (PL) spectra at room temperature and 10 K low temperature were characterized. It is shown that the strain relaxation significantly affect the piezoelectric field

thereby the nanorod structure leads to a promotion of the wafers' internal quantum efficiency (IQE) and blue-shift of the peak wavelengths of PL spectra

and the nonuniform distribution of the strain causes a broadening of the FWHM (full width at half maximum). Compared with the ordinary planar structure

the nanorod structure with the height of 747 nm induces an enhancement of 917% for the IQE

a blue-shift of 18 nm for the peak wavelengths of PL spectrum

and a broadening of 7 nm for the FWHM. The results also indicate that the decreasing of effective active area of samples with nanorod structure may reduce the FWHM.

关键词

Keywords

references

LI S F, WAAG A. GaN based nanorods for solid state lighting[J]. J. Appl. Phys., 2012, 111(7):071101-1-23.

JU J W, BAEK J H, LEE S J, et al.. Fabrication and characterization of high efficiency green nanopillar LED[J]. J. Cryst. Growth., 2013, 370:332-335.

KE M Y, WANG C Y, CHEN L Y, et al.. Application of nanosphere lithography to LED surface texturing and to the fabrication of nanorod LED arrays[J]. IEEE J. Sel. Top. Quant. Electron., 2009, 15(4):1242-1249.

CHOI H W, DAWSON M D. Improved current spreading in 370 nm AlGaN microring light emitting diodes[J]. Appl. Phys. Lett., 2005, 86(5):053504-1-3.

BAI J, WANG Q, WANG T. Characterization of InGaN-based nanorod light emitting diodes with different indium compositions[J]. J. Appl. Phys., 2012, 111(11):113103-1-7.

YANG G F, XIE F, TONG Y Y, et al.. Formation of nanorod InGaN/GaN multiple quantum wells using nickel nano-masks and dry etching for InGaN-based light-emitting diodes[J]. Mater. Sci. Semicond. Proc., 2015, 30:694-706.

LI Q M, WESTLAKE K R, CRAWFORD M H, et al.. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays[J]. Opt. Express, 2011, 19(25):25528-25534.

KIM S H, PARK H H, SONG Y H, et al.. An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes[J]. Opt. Express, 2013, 21(6):7125-7130.

CHUNG WW, YOO G Y, PARK H K, et al.. Fabrication of an InGaN/GaN-based LED nanorod array by nanosphere lithography and its optical properties[C]. Proceedings of The 15th IEEE International Conference on Nanotechnology, Rome, Italy, 2015:216-219.

CHEUNG C L, NIKOLIC? R J, REINHARDT C E, et al.. Fabrication of nanopillars by nanosphere lithography[J]. Nanotechnology, 2006, 17(5):1339-1343.

YU Z G, CHEN P, YANG G F, et al.. Influence of dry etching damage on the internal quantum efficiency of nanorod InGaN/GaN multiple quantum wells[J]. Chin. Phys. Lett., 2012, 29(7):078501-1-4.

杨华,谢自力,戴姜平,等. GaN纳米柱发光特性[J].发光学报, 2015, 36(3):279-282. YANG H, XIE Z L, DAI J P, et al.. Luminescence property of GaN nanorod[J]. Chin. J. Lumin., 2015, 36(3):279-282. (in Chinese)

DOAN M H, LEE J. Enhanced cathodoluminescence of KOH-treated InGaN/GaN LEDs with deep nano-hole arrays[J]. J. Opt. Soc. Korea, 2014, 18(3):283-287.

ZHU J H, WANG L J, ZHANG S M, et al.. The fabrication of GaN-based nanopillar light-emitting diodes[J]. J. Appl. Phys., 2010, 108(7):074302-1-4.

刘晓苗.基于聚苯乙烯微球的胶体晶体的制备及应用的研究[D].武汉:湖北大学, 2013. LIU X M. Fabrication of Colloidal Crystals by Using Polystyrenemicrospheres and Their Application[D]. Wuhan:Hubei University, 2013. (in Chinese)

赵玲慧,张连,王晓东,等.基于InGaN/GaN多量子阱双波长发光二极管生长及发光性能[J].光子学报, 2013, 42(10):1135-1139. ZHAO L H, ZHANG L, WANG X D, et al.. Growth and optical properties of InGaN/GaN dual-wavelength light-emitting diodes[J]. Acta Photon. Sin., 2013, 42(10):1135-1139. (in Chinese)

ZHU J H, WANG L J, ZHANG S M, et al.. Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars[J]. J. Appl. Phys., 2011, 109(8):084339-1-5.

HSUEH T H, HUANG H W, KAO C C, et al.. Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks[J]. Jpn. J. Appl. Phys., 2005, 44(4S):2661-2663.

SEO H W, BAE S Y, PARK J H, et al.. Strained gallium nitride nanowires[J]. J. Chem. Phys., 2002, 116(21):9492-9499.

YU P C, CHIU C H, WU Y R, et al.. Strain relaxation induced micro photoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling[J]. Appl. Phys. Lett., 2008, 93(8):081110-1-3.

WENG G E, ZHAO W R, CHEN S Q, et al.. Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green[J]. Nanoscale Res. Lett., 2015, 10(1):31-1-7.

Views

342

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Growth Rate of Quantum Barrier on Performance of InGaN-based Green LEDs

Preparation of ZnO Thin Film on Zein by RF Magnetron Sputtering

Influence of V-shaped Pits on Hole Current Distribution in GaN-based Green LED

Effect of Quantum Barrier Structures on Photoelectric Properties of GaN-based Green LED on Si Substrates

Finite Element Model of GaN Based LED and the Optimization of the Mesa Structure

Related Author

JIANG Feng-yi

ZHANG Jian-li

QUAN Zhi-jue

ZHENG Chang-da

WANG Xiao-lan

MO Chun-lan

LIAO Fang

GAO Xiao-hong

Related Institution

National Institute of LED on Silicon Substrate, Nanchang University

吉林建筑大学吉林省建筑电气综合节能重点实验室

吉林建筑大学电气与计算机学院

National Institute of LED on Si Substrate, Nanchang University

School of Power and Mechanical Engineering, Wuhan University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰