Photoluminescence and Synthesis of AlN Microrods

SHEN Long-hai; ZHANG Xuan-shuo

doi:10.3788/fgxb20163708.0927

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Photoluminescence and Synthesis of AlN Microrods

更新时间：2020-08-12

- Photoluminescence and Synthesis of AlN Microrods
- Chinese Journal of Luminescence Vol. 37, Issue 8, Pages: 927-931(2016)
- 作者机构：
  
  沈阳理工大学理学院, 辽宁沈阳 110159
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163708.0927
  CLC： O471.4;O482.31
- Received：27 March 2016，
  
  Revised：20 May 2016，
  
  Published：05 August 2016
- 稿件说明：
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沈龙海, 张轩硕,. AlN微晶棒的的制备及光致发光性能研究[J]. 发光学报, 2016,37(8): 927-931

SHEN Long-hai, ZHANG Xuan-shuo,. Photoluminescence and Synthesis of AlN Microrods[J]. Chinese Journal of Luminescence, 2016,37(8): 927-931
沈龙海, 张轩硕,. AlN微晶棒的的制备及光致发光性能研究[J]. 发光学报, 2016,37(8): 927-931 DOI： 10.3788/fgxb20163708.0927.

SHEN Long-hai, ZHANG Xuan-shuo,. Photoluminescence and Synthesis of AlN Microrods[J]. Chinese Journal of Luminescence, 2016,37(8): 927-931 DOI： 10.3788/fgxb20163708.0927.

摘要

采用直流电弧放电方法，在无催化剂的条件下直接氮化Al合成纤锌矿结构的AlN微晶棒。分别利用拉曼光谱仪（Raman）、扫描电子显微镜（SEM）和光致发光（PL）谱等测试手段对所制备样品进行表征和发光性能的研究。结果表明：所制备的AlN微晶棒长度约为30m，直径约为10m。在AlN微晶棒的PL谱中，有两个主要发光峰，中心在430 nm的发射源于V

和（V

-O

）

构成的深施主-深受主对缺陷发光，中心在650 nm的发射源于V

形成的深受主能级到价带的缺陷发光。在激发波长由270 nm逐渐增大到300 nm的过程中发现，AlN微晶棒波长在430 nm处的发光峰先增强后减弱，在激发波长为285 nm时强度最大；650 nm处的发光峰随激发波长增大而逐渐增强。

Abstract

The wurtzite AlN microrods were synthesized by direct nitriding metal Al without catalyst using the direct current arc discharge method. The structure

morphology and luminescence property of the as-synthesized samples were characterized by Raman spectra

SEM and PL spectra. The length and diameter of AlN microrods are nearly 30 m and 10 m

respectively. There are two emission peaks in the PL spectrum of AlN microrods. The emission at 430 nm can be ascribed to DAP(donor-acceptor pair) radiation transition from deep donor level of V

to deep acceptor (V

-O

)

. The emission at 650 nm can be ascribed to the radiation transition between deep V

acceptor and valence band. When the excitation wavelength changes from 270 nm to 300 nm

the intensity of the emission peak at 430 nm is strengthened and then weakened

and when the excitation wavelength is 285 nm

the intensity is maximum. The intensity of the emission peak at 650 nm increases with the increasing of the excitation wavelength.

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references

陈航洋,刘达艺,李金钗,等.高Al组分Ⅲ族氮化物结构材料及其在深紫外LED应用的进展[J].物理学进展, 2013, 33(2):43-56. CHENH Y, LIU D Y, LI J C, et al.. Development of high Al content structural Ⅲ nitrides and their applications in deep UV-LED[J]. Prog. Phys., 2013, 33(2):43-56. (in Chinese)

周立,陈涌海,王占国,等.多晶AlN光学性质研究[J].光散射学报, 2008, 20(3):245-248. ZHOU L, CHEN Y H, WANG Z G, et al.. Optical characteristics of poly-crystalline AlN[J]. J. Light Scatter., 2008, 20(3):245-248. (in Chinese)

TANIYASU Y, KASU M, MAKIMOTO T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres[J]. Nature, 2006, 441(7091):325-328.

KNEISSL M, KOLBE T, CHUA C, et al.. Advances in group Ⅲ-nitride-based deep UV light-emitting diode technology[J]. Semicond. Sci. Technol., 2011, 26(1):014036-1-6.

颜国君,陈光德,吕惠民.纳米六方相氮化铝的合成和光学性能研究[J].化学学报, 2006, 64(16):1688-1692. YAN G J, CHEN G D, LV H M. Synthesis and optical properties of hexagonal aluminum nitride nanocrystals[J]. Acta Chim. Sinica, 2006, 64(16):1688-1692. (in Chinese)

SOLTAMOV V A, ILYIN I V, SOLTAMOVA A A, et al.. Identification of the deep level defects in AlN single crystals by electron paramagnetic resonance[J]. J. Appl. Phys., 2010, 107(11):113515-1-9.

TANSLEY T L, EGAN R J. Point-defect energies in the nitrides of aluminum, gallium, and indium[J]. Phys. Rev. B, 1992, 45(19):10942-10950.

LAAKSONEN K, GANCHENKOVA M G, NIEMINEN R M. Vacancies in wurtzite GaN and AlN[J]. J. Phys.:Condens. Matter, 2009, 21(1):015803-1-6.

SOLTAMOV V A, ILYIN I V, SOLTAMOVA A A, et al.. Identification of nitrogen vacancies in an AlN single crystal:EPR and thermoluminescence investigations[J]. Phys. Solid State, 2011, 53(6):1186-1190.

MATTILA T, NIEMINEN R M. Ab initio study of oxygen point defects in GaAs, GaN, and AlN[J]. Phys. Rev. B, 1996, 54(23):16676-16682.

GAO Y G, CHEN X L, LAN Y C, et al.. Blue emission and Raman scattering spectrum from AlN nanocrystalline powders[J]. J. Cryst. Growth, 2000, 213(1-2):198-202.

WEINSTEIN I A, VOKHMINTSEV A S, SPIRIDONOV D M. Thermoluminescence kinetics of oxygen-related centers in AlN single crystals[J]. Diam. Relat. Mater., 2012, 25:59-62.

TRINKLER L, BERZINA B, KASJAN D, et al.. Luminescence processes induced by UV radiation in A1N nanotips and nanorods[J]. Radiat. Meas., 2008, 43(2-6):231-235.

SCHULZ T, ALBRECHT M, IRMSCHER K, et al.. Ultraviolet luminescence in AlN[J]. Phys. Stat. Sol. (b), 2011, 248(6):1513-1518.

BELLUCCI S, POPOV A I, BALASUBRAMANIAN C, et al.. Luminescence, vibrational and XANES studies of AlN nanomaterials[J]. Radiat. Meas., 2007, 42(4-5):708-711.

LIU B, EDGAR J H, RAGHOTHAMACHAR B, et al.. Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation[J]. Mater. Sci. Eng. B, 2005, 117(1):99-104.

NEPAL N, NAM K B, NAKARMI M L, et al.. Optical properties of the nitrogen vacancy in AlN epilayers[J]. Appl. Phys. Lett., 2004, 84(7):1090-1092.

徐叙瑢,苏勉曾.发光学与发光材料[M].北京:化学工业出版社, 2004. XU X R, SU M Z. Luminescence and Luminescent Materials [M]. Beijing:Chemical Industry Press, 2004. (in Chinese)

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