Doping Modification of YVO4:Eu3+ Down-conversion Materials for Solar Cell Applications

TAN Man-lin; SHANG Xu-ran; WANG Xiao-wei; LI Dong-shuang; FU Dong-ju; ZHANG Wei-li; MA Qin

doi:10.3788/fgxb20163708.0912

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Doping Modification of YVO₄:Eu³⁺ Down-conversion Materials for Solar Cell Applications

更新时间：2020-08-12

- Doping Modification of YVO₄:Eu³⁺ Down-conversion Materials for Solar Cell Applications
- Chinese Journal of Luminescence Vol. 37, Issue 8, Pages: 912-918(2016)
- 作者机构：
  
  1. 深圳清华大学研究院, 广东深圳 518057
  2. 哈尔滨工业大学深圳研究生院, 广东深圳 518055
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163708.0912
  CLC： TB303;O482.31
- Received：29 March 2016，
  
  Revised：20 May 2016，
  
  Published：05 August 2016
- 稿件说明：
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檀满林, 尚旭冉, 王晓伟等. 太阳电池用YVO4:Eu3+下转换材料的掺杂改性研究[J]. 发光学报, 2016,37(8): 912-918

TAN Man-lin, SHANG Xu-ran, WANG Xiao-wei etc. Doping Modification of YVO4:Eu3+ Down-conversion Materials for Solar Cell Applications[J]. Chinese Journal of Luminescence, 2016,37(8): 912-918
檀满林, 尚旭冉, 王晓伟等. 太阳电池用YVO4:Eu3+下转换材料的掺杂改性研究[J]. 发光学报, 2016,37(8): 912-918 DOI： 10.3788/fgxb20163708.0912.

TAN Man-lin, SHANG Xu-ran, WANG Xiao-wei etc. Doping Modification of YVO4:Eu3+ Down-conversion Materials for Solar Cell Applications[J]. Chinese Journal of Luminescence, 2016,37(8): 912-918 DOI： 10.3788/fgxb20163708.0912.

摘要

为进一步提高YVO

材料的下转换发光性能，在改进后的溶胶-凝胶法制备的YVO

：Eu

中，通过掺入Bi

来拓宽其在紫外波段的光谱吸收并提高其发光强度，通过掺入P

达到以PO

部分取代VO

来改善YVO

：Eu

的光输出稳定性及温度猝灭特性的目的。研究表明，掺入的Bi

和P

可成功取代YVO

晶格中的Y

和V

。当Bi

掺入量较少时，样品仍然为四方晶系，Bi

较好地取代了Y

的晶格位置，形成单相的晶体结构。而在掺入少量的P

之后，YVO

与YPO

之间形成了均匀的固溶体。在350 nm激发光源作用下，当Bi

和P

掺杂摩尔分数分别为0.04和0.10时，发光强度达到最大，特别是YV

0.90

0.10

：0.05Eu

在619 nm处的发光强度要比YVO

：0.05Eu

的发光强度增大1.9倍。

Abstract

Bismuth (Bi

) and phosphorus (P

) ions doped YVO

:Eu

down-conversion materials were prepared by modified sol-gel method to broaden the absorption range of ultraviolet light and enhance the stability of light emission. It is shown that some positions of Yttrium (Y

) and Vanadium (V

) ions can be successfully replaced by incorporated Bismuth (Bi

) and phosphorus (P

) ions in the YVO

lattice. As to low Bi

doping

the crystal structure is still tetragonal and the position of Y

is well substituted by Bi

. While for low P

doping

a homogeneous solid solution is formed between YVO

and YPO

.Under the excitation of 325 nm

the highest luminescence intensity can be obtained with Bi

mole fraction of 0.04 and P

mole fraction of 0.10

respectively. In that case

the instensity of YV

0.90

0.10

:0.05Eu

can increase up to 1.9 times comparing to YVO

:0.05Eu

关键词

Keywords

references

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