Optimization of Resonant-cavity Effect and Photonic Crystals Structure for High Light Extraction Efficiency UV-A Vertical-structure LEDs

HU Xiao-long; QI Zhao-yi; HUANG Hua-mao; WANG Hong

doi:10.3788/fgxb20163707.0836

您当前的位置：

首页 >

文章列表页 >

Optimization of Resonant-cavity Effect and Photonic Crystals Structure for High Light Extraction Efficiency UV-A Vertical-structure LEDs

更新时间：2020-08-12

- Optimization of Resonant-cavity Effect and Photonic Crystals Structure for High Light Extraction Efficiency UV-A Vertical-structure LEDs
- Chinese Journal of Luminescence Vol. 37, Issue 7, Pages: 836-844(2016)
- 作者机构：
  
  1. 华南理工大学广东省光电工程技术研究开发中心,广东广州,510640
  2. 华南理工大学物理与光电学院,广东广州,510640
  3. 华南理工大学电子与信息学院,广东广州,510640
- 作者简介：
- 基金信息：
  
  "863"
- DOI：10.3788/fgxb20163707.0836
  CLC： TN383+.1
- Received：17 March 2016，
  
  Revised：26 April 2016，
  
  Published：05 July 2016
- 稿件说明：
移动端阅览
胡晓龙, 齐赵毅, 黄华茂等. 基于谐振腔效应的近紫外垂直结构LED光萃取效率优化[J]. 发光学报, 2016,37(7): 836-844

HU Xiao-long, QI Zhao-yi, HUANG Hua-mao etc. Optimization of Resonant-cavity Effect and Photonic Crystals Structure for High Light Extraction Efficiency UV-A Vertical-structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(7): 836-844
胡晓龙, 齐赵毅, 黄华茂等. 基于谐振腔效应的近紫外垂直结构LED光萃取效率优化[J]. 发光学报, 2016,37(7): 836-844 DOI： 10.3788/fgxb20163707.0836.

HU Xiao-long, QI Zhao-yi, HUANG Hua-mao etc. Optimization of Resonant-cavity Effect and Photonic Crystals Structure for High Light Extraction Efficiency UV-A Vertical-structure LEDs[J]. Chinese Journal of Luminescence, 2016,37(7): 836-844 DOI： 10.3788/fgxb20163707.0836.

摘要

利用有限时域差分法研究近紫外垂直结构LED的光萃取效率的影响因素。结果显示

LED的光萃取效率随p-GaN层厚度的变化呈周期性振荡变化

在极大值点处的光萃取效率是极小值点处的4.8倍。进一步地

对上述振荡极大值点和极小值点的n-GaN层厚度和表面光子晶体结构进行优化

优化的光萃取效率分别达到35.3%和24.7%

比优化前各提高了37.9%和280%。因此

合理的外延层和光子晶体结构可有效提高近紫外垂直结构LED的光萃取效率

这对实验制备高效近紫外垂直结构LED芯片具有一定的指导作用。

Abstract

Optimization of LED epilayer and photonic crystals (PC) structure for high light extraction efficiency (LEE) UV-A vertical-structure LEDs (VS-LEDs) were performed by using finite difference time domain method. The LEE of the VS-LEDs was markedly enhanced by optimizing the thicknesses of p-GaN layer and parameters of PC structure. The LEE of the VS-LEDs shows cyclic variation as function of the thicknesses of p-GaN layer. It is showed that the LEE of the VS-LEDs with the p-GaN thickness of 200 nm is 4.8 times to that of the VS-LEDs with the p-GaN thickness of 310 nm. In addition

the thickness of the n-GaN layer and the surface photonic crystal structure were further optimized

and the LEE of the VS-LEDs with the p-GaN thickness of 200 nm and 310 nm reaches 35.3% and 24.7%

respectively. The optimized LEE of the VS-LEDs is 1.4 and 3.8 times to that of the VS-LEDs without PC structure

respectively. Therefore

the reasonable LED epilayer and the PC structure can effectively improve the LEE of the VS-LEDs. It provides a theoretical guide for the preparation of the UV-A VS-LEDs.

关键词

Keywords

references

YEH Y H, SHEU J K, LEE M L, et al.. Vertical GaN-based LEDs with naturally textured surface formed by patterned sapphire substrate with self-assembled Ag nanodots as etching mask[J]. IEEE Trans. Electron Dev., 2015, 62(29):19-23.

LAUBSCH A, SABATHIL M, BAUR J, et al.. High-power and high-efficiency InGaN-based light emitters[J]. IEEE Trans. Electron Dev., 2010, 57:79-87.

CHU C F, CHENG C C, LIU W H, et al.. High brightness GaN vertical light-emitting diodes on metal alloy for general lighting application[J]. Proc. IEEE., 2010, 98:1197-207.

赵玲慧, 张连,王晓东,等. 基于InGaN/GaN多量子阱双波长发光二极管生长及发光性能[J]. 光子学报, 2013, 42(10):1135-1139. ZHAO L H, ZHANG L, WANG X D, et al.. Growth and optical properties of InGaN/GaN dual-wavelength light-emitting diodes[J]. Acta Photon. Sinica, 2013, 42(10):1135-1139. (in Chinese)

RYU H Y. Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light emitting diodes via the Purcell effect[J]. Opt. Express, 2015, 23(19):242745-1-10.

LIU Y, GUO Z, LI J, et al.. Performance enhancement of InGaN-based light-emitting diodes with InGaN/AlInN/InGaN composition-graded barriers[J]. Semicond. Sci. Technol., 2015, 30:125014.

ZHANG J Y, LIU W J, CHEN M, et al.. Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique[J]. Nanoscale Res. Lett., 2012, 7:1-4.

TAKAKAZU K, YASUHIRO S, MASAKI Y C, et al.. Internal quantum efficiency and nonradiative recombination rate in InGaN-based near-ultraviolet light-emitting diodes[J]. Jpn. J. Appl. Phys., 2012, 51:072102-1-7.

CHANG S J, CHANG L, KUO D, et al.. GaN-based LEDs with rough surface and selective KOH etching[J]. J. Disp. Technol., 2014, 10:27-32.

郭伟玲,俞鑫,刘建朋,等. 具有电流阻挡层的不同GaN基LED的光电特性[J]. 发光学报, 2013, 34(7):918-923. GUO W L, YU X, LIU J P, et al.. Electrical and optical characteristics of different GaN-based light emitting diodes with current blocking layer[J]. Chin. J. Lumin., 2013, 34(7):918-923. (in English)

HU X L, QI Z Y, WANG H, et al.. Performance of InGaN-based thin-film LEDs with flip-chip configuration and concavely patterned surface fabricated on electroplating metallic substrate[J]. IEEE Photon. J., 2016, 8:1-8.

DING Q A, LI K, KONG F M, et al.. Improving the vertical light-extraction efficiency of GaN-based thin-film flip-chip LEDs with p-side deep-hole photonic crystals[J]. J. Disp. Technol., 2014, 10(11):909-916.

LIU W J, HU X L, ZHANG J Y, et al.. Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes[J]. Opt. Mater., 2012, 34:1327-1329.

骆岩红,赵寰宇,李公平. 基于晶格效应的光子晶体带隙特性研究[J]. 光子学报, 2014, 43(12):1231001. LUO Y H, ZHAO H Y, LI G P. Investigation of photonic band gaps of two-dimensional photonic crystals based on lattice configurations[J]. Acta Photon. Sinica, 2014, 43(12):1231001. (in Chinese)

SHIN Y C, KIM D H, CHAE D J, et al.. Effects of nanometer-scale photonic crystal structures on the light extraction from GaN light-emitting diodes[J]. IEEE J. Quant. Electron., 2010, 46:1375-1380.

WEI T, HUO Z, ZHANG Y, et al.. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals[J]. Opt. Express, 2014, 22:A1093-A1100.

ODER T N, SHAKYA J, LIN J Y, et al.. Ⅲ-nitride photonic crystals[J]. Appl. Phys. Lett., 2003, 83(6):1231-1233.

LAI C F, CHAO C H, KUO H CH, et al.. Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes[J]. Appl. Phys. Lett., 2009, 94(12):123106-1-3.

DING Q A, LI K, KONG F M, et al.. Improving the vertical light extraction efficiency of GaN-based thin-film flip-chip LED with double embedded photonic crystals[J]. IEEE J. Quant. Electon., 2015, 51(2):3300109-1-9.

KIM S K, EE H S, CHOI W, et al.. Surface-plasmon-induced light absorption on a rough silver surface[J]. Appl. Phys. Lett., 2011, 98:011109-1-3.

KIM S H, SONG Y H, JEON S R, et al.. Influence of interference on extraction efficiency of ultraviolet vertical light-emitting diodes[J]. J. Electron. Mater., 2013, 42(8):2435-2438.

ZHU P F, TANSU N. Resonant cavity effect optimization of Ⅲ-nitride thin-film flip-chip light-emitting diodes with microsphere arrays[J]. Appl. Opt., 2015, 54(20):317-323.

蔡镇准,胡晓龙,刘丽,等. 基于混合型量子阱的GaN基垂直结构发光二极管性能[J]. 发光学报, 2015, 36(6):639-644. CAI Z Z, HU X L, LIU L, et al.. Performance of GaN-based vertical structure light emitting diodes with hybrid quantum wells[J]. Chin. J. Lumin., 2015, 36(6):639-644. (in Chinese)

ZHU P F, LIU G Y, ZHANG J, et al.. FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays[J]. J. Disp. Technol., 2014, 9(5):317-323.

SHEN Y C, WIERER J J, KRAMES M R, et al.. Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes[J]. Appl. Phys. Lett., 2003, 82(14):2221-2223.

LONG D H, HWANG I K, RYU S W. Design optimization of photonic crystal structure for improved light extraction of GaN LED[J]. IEEE J. Sel. Top. Quant. Electron., 2009, 15(4):1257-1263.

KIM J Y, KWON M K, PARK S J. Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal[J]. Appl. Phys. Lett., 2010, 96:251103.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Design of Surface Textures for High Light Extraction Efficiency GaN-based Flip-chip TFLEDs

Research Progress of Blue Light-emitting Diodes Based on Quasi-two-dimensional Perovskite Light-emitting Layer Optimization

Enhanced Hole Injection of GaN Based Green LEDs by Inducing Carrier Transport Through V-pits

Green Light-emitting Diodes Based on Sorbitol-passivated Perovskite Polycrystalline Films

Research Progress of Transparent Light-emitting Diodes

Related Author

QI Zhao-yi

HU Xiao-long

WANG Hong

LIU Qianqian

HAN Peng

ZHANG Yong

ZHANG Donghao

YANG Dongkai

Related Institution

Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronic and Information Engineering, South China University of Technology

Academy of Electronics and Information, South China University of Technology

School of Material Science and Engineering， Harbin Institute of Technology

Department of Electronic Science， School of Electronic Science and Engineering， Xiamen University

Xiamen San’an Optoelectronic Company Ltd.

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰