NIU Ping-juan, WU Ying-lei, YU Li-yuan etc. Optical Properties of Defects in GaN Based LED Irradiated by Electron[J]. Chinese Journal of Luminescence, 2016,37(7): 798-803
NIU Ping-juan, WU Ying-lei, YU Li-yuan etc. Optical Properties of Defects in GaN Based LED Irradiated by Electron[J]. Chinese Journal of Luminescence, 2016,37(7): 798-803 DOI: 10.3788/fgxb20163707.0798.
Optical Properties of Defects in GaN Based LED Irradiated by Electron
The plane wave ultra soft pseudo potential method based on the first principle is used to calculate the optical properties of GaN epitaxial materials caused by point defects after electron irradiation. First
the properties of the intrinsic GaN crystal are calculated as a reference for the study of the variation of the defect properties. The effects of the defects of V
N
V
Ga
Ga
N
Mg
Ga
Mg
Ga
-O
N
Mg
Ga
-V
N
V
Ga
-O
N
on the optical absorption spectra are emphatically analyzed. As the InGaN multi quantum well is the main source of LED emission
the optical properties of GaN doped with different In mole fraction are also studied. The results show that V
N
Ga
N
and doing of In make the GaN absorption peak red shift and the absorption coefficient decreases. V
Ga
Mg
Ga
Mg
Ga
-O
N
V
Ga
-O
N
all make the main absorption peaks of GaN appear blue shift. Mg
Ga
defect makes the main absorption peak's value increase
and the remaining defects make the main peak absorption coefficient decrease. Mg
Ga
-V
N
only decreases the main peak value
does not change the photon absorption wavelength. It is confirmed that the defects can make the material properties change after electron irradiation.
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references
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