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Optical Properties of Defects in GaN Based LED Irradiated by Electron
更新时间:2020-08-12
    • Optical Properties of Defects in GaN Based LED Irradiated by Electron

    • Chinese Journal of Luminescence   Vol. 37, Issue 7, Pages: 798-803(2016)
    • DOI:10.3788/fgxb20163707.0798    

      CLC: TN312.8
    • Received:29 January 2016

      Revised:24 March 2016

      Published:05 July 2016

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  • NIU Ping-juan, WU Ying-lei, YU Li-yuan etc. Optical Properties of Defects in GaN Based LED Irradiated by Electron[J]. Chinese Journal of Luminescence, 2016,37(7): 798-803 DOI: 10.3788/fgxb20163707.0798.

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LI Zilong
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Related Institution

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