浏览全部资源
扫码关注微信
1. 中国海洋大学信息科学与工程学院 物理系,山东 青岛,266100
2. 中国科学院物理研究所 北京凝聚态国家实验室 北京,100190
Received:17 February 2016,
Revised:21 March 2016,
Published:05 July 2016
移动端阅览
孙鹏, 王超, 元光等. 金刚石锥阵列的无掩膜刻蚀制备及其形貌演变机制[J]. 发光学报, 2016,37(7): 793-797
SUN Peng, WANG Chao, YUAN Guang etc. Maskless Plasma Etching of Diamond Cones and The Morphology Evolution Mechanism[J]. Chinese Journal of Luminescence, 2016,37(7): 793-797
孙鹏, 王超, 元光等. 金刚石锥阵列的无掩膜刻蚀制备及其形貌演变机制[J]. 发光学报, 2016,37(7): 793-797 DOI: 10.3788/fgxb20163707.0793.
SUN Peng, WANG Chao, YUAN Guang etc. Maskless Plasma Etching of Diamond Cones and The Morphology Evolution Mechanism[J]. Chinese Journal of Luminescence, 2016,37(7): 793-797 DOI: 10.3788/fgxb20163707.0793.
为获得具有优良场发射性能的金刚石锥阵列
利用偏压热灯丝化学气相沉积系统分别在高质量大颗粒金刚石厚膜与纳米金刚石薄膜上进行了无掩膜刻蚀研究
系统比较了高质量大颗粒金刚石厚膜与纳米金刚石薄膜的刻蚀特性
制备了大面积均匀金刚石锥阵列和高长径比(20:1)金刚石纳米线阵列
探讨了金刚石锥的刻蚀形成机理。
In order to obtain the diamond cones with high field emission property
the etching characteristics of high-quality diamond thick film and nano-crystalline diamond films were studied by using the bias voltage assisted hot filament chemical vapor deposition (BA-HFCVD) method
the diamond cones with high aspect ratio of 20:1 in a large area were fabricated by optimizing etching condition
in addition
the formation mechanism of the diamond cone was studied in detail.
KUMASHIRO Y. Electric Refractory Materials[M]. Florida:CRC Press, 2000.
FIELD J E. The Properties of Natural and Synthetic Diamond[M]. New York:Academic Press, 1992.
LIN C R,WEI D H, BENDAOM K, et al.. Development of high-performance UV detector using nanocrystalline diamond thin film[J]. Int. J. Photoenergy, 2014, 2014:492152-1-8.
MIZUOCHI N, MAKINO T, KATO H, et al.. Electrically driven single-photon source at room temperature in diamond[J]. Nat. Photon., 2012, 6(5):299-303.
AWSCHALOM D D, EPSTEIN R, HANSON R. The diamond age of spintronics[J]. Science, 2007, 297(4):84-91.
AWSCHALOM D D, BASSE L C, DZURAK A S, et al.. Quantum spintronics:engineering and manipulating atom-like spins in semiconductors[J]. Science, 2013, 339(6124):1174-1179.
杨延宁,张志勇,闫军锋,等. 纳米金刚石掺混纳米氧化锌的场发射特性[J]. 光子学报, 2015, 44(2):216001.YANG Y N, ZHANG Z Y, YAN J F, et al.. Field emission characteristics of nano-zinc oxide mixed nano-diamond[J]. Acta Photon. Sinica, 2015, 44(2):216001. (in Chinese)
WANG Q, QU S L, FU S Y, et al.. Chemical gases sensing properties of diamond nanocone arrays formed by plasma etching[J]. J. Appl. Phys., 2007, 102(10):103714.
WANG Q, LI J J, LI Y L, et al.. Maskless plasma etching of diamond cones:the role of CH4 gas and enhanced field emission property[J]. J. Phys. Chem. C, 2007, 111(19):7058-7062.
YAMADA T, VINOD P R, HWANG D S, et al.. Self-aligned fabrication of single crystal diamond gated field emitter array[J]. Diamond Relat. Mater., 2005, 14(11):2047-2052.
WANG Q, WANG Z L, LI J J, et al.. Field emission from individual diamond cone formed by plasma etching[J]. Appl. Phys. Lett., 2006, 89(6):063105.
TAO Y, DEGEN C L. Single-crystal diamond nanowire tips for ultrasensitive force microscopy[J]. Nano Lett., 2015, 15(12):7893-7897.
WANG Q, TIAN Z, LI Y, et al.. General fabrication of ordered nanocone arrays by one-step selective plasma etching[J]. Nanotechnology, 2014, 25(11):115301.
PFEIFFER R, KUZMANY H, SALK N, et al.. Evidence for trans-polyacetylene in nanocrystalline diamond films from H-D isotropic substitution experiments[J]. Appl. Phys. Lett., 2003, 82(23):4149-4150.
KUZMANY H, PFEIFFER R, SALK N, et al.. The mystery of the 1140 cm-1 Raman line in nanocrystalline diamond films[J]. Carbon, 2004, 42(5):911-917.
BIRRELL J, GERBI J E, AUCIELLO O, et al.. Interpretation of the Raman spectra of ultrananocrystalline diamond[J]. Diamond Relat. Mater., 2005, 14(1):86-92.
杨国伟. 金刚石薄膜的结构特征与电导率的相关性[J].半导体光电,1995, 16(4):333-335. YANG G W. Dependence of structure characteristics of diamond film on electrical conductivity[J]. Semicond. Optoelectron., 1995,16(4):333-335.
0
Views
85
下载量
1
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution