Substrate Temperature Dependent Performance of Photoresponsive Organic Field Effect Transistors Based on Titanyl-phthalocyanine

ZHENG Ya-kai; WEI Yi; SUN Lei; CHEN Zhen; PENG Ying-quan; TANG Ying

doi:10.3788/fgxb20163706.0725

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Substrate Temperature Dependent Performance of Photoresponsive Organic Field Effect Transistors Based on Titanyl-phthalocyanine

更新时间：2020-08-12

- Substrate Temperature Dependent Performance of Photoresponsive Organic Field Effect Transistors Based on Titanyl-phthalocyanine
- Chinese Journal of Luminescence Vol. 37, Issue 6, Pages: 725-730(2016)
- 作者机构：
  
  1. 中国计量学院光学与电子科技学院,浙江杭州,310018
  2. 兰州大学物理科学与技术学院,甘肃兰州,730000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163706.0725
  CLC： TN386
- Received：07 January 2016，
  
  Revised：21 March 2016，
  
  Published：05 June 2016
- 稿件说明：
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郑亚开, 韦一, 孙磊等. 衬底温度对TiOPc光敏有机场效应管的影响[J]. 发光学报, 2016,37(6): 725-730

ZHENG Ya-kai, WEI Yi, SUN Lei etc. Substrate Temperature Dependent Performance of Photoresponsive Organic Field Effect Transistors Based on Titanyl-phthalocyanine[J]. Chinese Journal of Luminescence, 2016,37(6): 725-730
郑亚开, 韦一, 孙磊等. 衬底温度对TiOPc光敏有机场效应管的影响[J]. 发光学报, 2016,37(6): 725-730 DOI： 10.3788/fgxb20163706.0725.

ZHENG Ya-kai, WEI Yi, SUN Lei etc. Substrate Temperature Dependent Performance of Photoresponsive Organic Field Effect Transistors Based on Titanyl-phthalocyanine[J]. Chinese Journal of Luminescence, 2016,37(6): 725-730 DOI： 10.3788/fgxb20163706.0725.

摘要

制备了基于酞菁氧钛(TiOPc)的有机光敏场效应管

对氧化铟锡(ITO)衬底器件进行温度优化。实验结果表明

随着衬底温度(

sub

)的增加

器件载流子迁移率(

)、光暗电流比(

)和光响应度(

)先增加后减小

在

sub

=140℃时达到最大。

sub

=140℃的ITO衬底器件

在波长808nm、光功率密度190mWcm

-2

的近红外光照下

最大载流子迁移率达到1.3510

-2

-1

最大光暗电流比为250

栅压为－50V时的最大光响应度为1.51mA/W。

Abstract

Organic field-effect transistors(OFETs) based on titanyl-phthalocyanine (TiOPc) were fabricated

and the temperature of ITO substrate(

sub

) was optimized. The results show that the carrier mobility(

)

photosensitivity(

)

and photoresponsivity(

) increase firstly

and then decrease with the increasing of

sub

. When

sub

=140 ℃

OFETs exhibit a maximum carrier mobility of 1.3510

-2

-1

a maximum photosensitivity of 250

and a maximum photoresponsivity of 1.51 mA/W under the illumination by a laser diode with a wavelength of 808 nm and power density of 190 mWcm

-2

关键词

Keywords

references

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