High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with Large Gate Swing

ZHAO Yong-bing; ZHANG Yun; CHENG Zhe; HUANG Yu-liang; ZHANG Lian; LIU Zhi-qiang; YI Xiao-yan; WANG Guo-hong; LI Jin-min

doi:10.3788/fgxb20163706.0720

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High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with Large Gate Swing

更新时间：2020-08-12

- High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with Large Gate Swing
- Chinese Journal of Luminescence Vol. 37, Issue 6, Pages: 720-724(2016)
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院半导体研究所半导体照明研发中心北京,100083
  3. 半导体照明联合创新国家重点实验室北京,100083
  4. 北京市第三代半导体材料及应用技术工程中心北京,100083
- 作者简介：
- 基金信息：
  
  "863"
- DOI：10.3788/fgxb20163706.0720
  CLC： TN5;TN3;TN4
- Received：21 January 2016，
  
  Revised：07 March 2016，
  
  Published：05 June 2016
- 稿件说明：
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赵勇兵, 张韵, 程哲等. 具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(6): 720-724

ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with Large Gate Swing[J]. Chinese Journal of Luminescence, 2016,37(6): 720-724
赵勇兵, 张韵, 程哲等. 具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管[J]. 发光学报, 2016,37(6): 720-724 DOI： 10.3788/fgxb20163706.0720.

ZHAO Yong-bing, ZHANG Yun, CHENG Zhe etc. High-threshold-voltage Normally-off Recessed MOS-gate AlGaN/GaN HEMT with Large Gate Swing[J]. Chinese Journal of Luminescence, 2016,37(6): 720-724 DOI： 10.3788/fgxb20163706.0720.

摘要

介绍了一种具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管。采用原子层淀积(ALD)方法实现Al

栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的栅长(

)为2 m

栅宽(

)为0.9 mm(0.45 mm2)

栅极和源极(

)之间的距离为5 m

栅极和漏极(

)之间的距离为10 m。在栅压为－20 V时

槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电仅为0.65 nA。在栅压为+12 V时

槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电为225 nA。器件的栅压摆幅为－20~+12 V。在栅压

=+10 V时

槽栅常关型AlGaN/GaN MOS-HEMT电流和饱和电流密度分别达到了98 mA和108 mA/mm (

=0.9 mm)

特征导通电阻为4 mcm

。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.6 V

开启与关断电流比达到了510

。当

=7 V时

器件的峰值跨导为42 mS/mm (

=0.9 mm

=+10 V)。在

=0 V时

栅漏间距为10 m的槽栅常关型AlGaN/GaN MOS-HEMT的关断击穿电压为450 V

关断泄露电流为0.025 mA/mm。

Abstract

This essay has reported normally-off operation of an AlGaN/GaN recessed MOS-gate high electron mobility transistor(MOS-gate HEMT) fabricated by the inductively coupled plasma(ICP) recessed technique. A 40-nm Al

film was deposited by the atomic layer deposition(ALD) as the gate dielectric. The normally-off recessed MOS-gate AlGaN/GaN HEMT with a gate length of 2 m and a gate width of 0.9 mm exhibits a high threshold voltage of+4.6 V

a specific on-resistance of 4 mcm

and a drain current density of 108 mA/mm (at a positive gate bias of 10 V). When the gate bias (

) is 0 V

the breakdown voltage(BV) of 450 V has been achieved at a drain leakage current of 0.025 mA/mm for the recessed MOS-gate HEMT with a gate-drain distance of 10 m. The on/off drain-current ratio (I

off

) is 510

for the recessed MOS-gate HEMT. Under a negative gate bias of -20 V

the gate leakage current of the recessed MOS-gate HEMT was 0.65 nA.

关键词

Keywords

references

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