WANG Fei-fei, LI Xin-kun, LIANG De-chun etc. High-power Short-wavelength InAlGaAs/AlGaAs Quantum-dot Superluminescent Diodes[J]. Chinese Journal of Luminescence, 2016,37(6): 706-710
WANG Fei-fei, LI Xin-kun, LIANG De-chun etc. High-power Short-wavelength InAlGaAs/AlGaAs Quantum-dot Superluminescent Diodes[J]. Chinese Journal of Luminescence, 2016,37(6): 706-710 DOI: 10.3788/fgxb20163706.0706.
In order to meet the short-wavelength applications of the superluminescent diodes
a bent-waveguide superluminescent diode was fabricated by using InAlGaAs/AlGaAs quantum-dot active region and dry etching process. The peak output power up to 29 mW with the wavelength centered at 880 nm and the full-width at half-maximum of 20.3 nm were obtained. Also the influences of wet etching and dry etching on the device properties were compared. At 1.6 A pulsed current injection
the peak output power of the device fabricated by wet etching is only 7 mW. Compared with wet etching
dry etching can precisely control the shape and parameters of the waveguide
leading to smaller waveguide loss and higher output power.
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references
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