n-i-p Type InGaN Solar Cells with Graded In Composition

LU Lin; LI Ming-chao; XU Fu-jun; JIANG Ming; CHEN Qi-gong

doi:10.3788/fgxb20163706.0682

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n-i-p Type InGaN Solar Cells with Graded In Composition

更新时间：2020-08-12

- n-i-p Type InGaN Solar Cells with Graded In Composition
- Chinese Journal of Luminescence Vol. 37, Issue 6, Pages: 682-687(2016)
- 作者机构：
  
  1. 安徽工程大学电气工程学院,安徽芜湖,241000
  2. 安徽工程大学检测技术与节能装置安徽省重点实验室,安徽芜湖,241000
  3. 北京大学物理学院宽禁带半导体研究中心北京,100871
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20163706.0682
  CLC： TN304.2
- Received：14 January 2016，
  
  Revised：03 April 2016，
  
  Published：05 June 2016
- 稿件说明：
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鲁麟, 李明潮, 许福军等. In组分梯度渐变的n-i-p结构InGaN太阳能电池性能研究[J]. 发光学报, 2016,37(6): 682-687

LU Lin, LI Ming-chao, XU Fu-jun etc. n-i-p Type InGaN Solar Cells with Graded In Composition[J]. Chinese Journal of Luminescence, 2016,37(6): 682-687
鲁麟, 李明潮, 许福军等. In组分梯度渐变的n-i-p结构InGaN太阳能电池性能研究[J]. 发光学报, 2016,37(6): 682-687 DOI： 10.3788/fgxb20163706.0682.

LU Lin, LI Ming-chao, XU Fu-jun etc. n-i-p Type InGaN Solar Cells with Graded In Composition[J]. Chinese Journal of Luminescence, 2016,37(6): 682-687 DOI： 10.3788/fgxb20163706.0682.

摘要

为了优化InGaN太阳能电池结构并有效地指导实际电池的制备

研究了n-i-p(p层在下)In组分梯度渐变结构的InGaN太阳能电池的性能特征。通过APSYS软件模拟计算

对比采用p-i-n渐变结构(p层在上)和n-i-p渐变结构(p层在下)的InGaN太阳能电池的器件性能。结果表明

采用n-i-p渐变结构的InGaN电池

i-InGaN层在低In组分下没有明显的优势

而在高In组分下的器件性能较好。在In组分为0.62时

转换效率最高达到8.48%。分析表明

p层在下的n-i-p渐变结构使得InGaN电池的极化电场与耗尽区的内建电场方向一致

有利于载流子的输运。采用n-i-p渐变结构有利于制备高性能的InGaN太阳能电池。

Abstract

In order to optimize InGaN solar cell (SC) structures and effectively guide the preparation

the properties of n-i-p InGaN SC structures with graded In composition were investigated. Through APSYS simulation software

the performances of p-i-n and n-i-p SC structures with graded In composition were compared. It is found that n-i-p structures don't have obvious advantage in the device performance over p-i-n ones when In composition of i-InGaN layer is low

which yet presents better performance with higher In composition. When In composition is 0.62

the SC conversion efficiency reaches 8.48%. The further analysis indicates that the polarization electric field in InGaN layer has the same directions with the built-in one in the depletion region for the case of n-i-p SC structures

which is very beneficial for carrier transport. The n-i-p SC structures with graded In composition are proven to be beneficial for high performance InGaN SCs.

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references

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